Cypress Semiconductor Corp S26KS512SDGBHA030
- Part Number:
- S26KS512SDGBHA030
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3235174-S26KS512SDGBHA030
- Description:
- FLASH MEMORY NOR
- Datasheet:
- S26KS512SDGBHA030
Cypress Semiconductor Corp S26KS512SDGBHA030 technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp S26KS512SDGBHA030.
- Factory Lead Time13 Weeks
- Mounting TypeSurface Mount
- Package / Case24-VBGA
- Surface MountYES
- Operating Temperature-40°C~105°C TA
- PackagingTray
- Published2017
- SeriesAutomotive, AEC-Q100, HyperFlash™ KS
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations24
- HTS Code8542.32.00.51
- TechnologyFLASH - NOR
- Voltage - Supply1.7V~1.95V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch1mm
- Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PBGA-B24
- Supply Voltage-Max (Vsup)1.95V
- Supply Voltage-Min (Vsup)1.7V
- Memory Size512Mb 64M x 8
- Memory TypeNon-Volatile
- Operating ModeSYNCHRONOUS
- Clock Frequency133MHz
- Access Time96ns
- Memory FormatFLASH
- Memory InterfaceParallel
- Organization64MX8
- Memory Width8
- Memory Density536870912 bit
- Screening LevelAEC-Q100; TS 16949
- Programming Voltage1.8V
- Height Seated (Max)1mm
- Length8mm
- Width6mm
- RoHS StatusROHS3 Compliant
S26KS512SDGBHA030 Overview
This product is packaged in a tray and has 24 terminations. The voltage supply range is 1.7V to 1.95V and the terminal position is at the bottom. It has 1 function and operates at a supply voltage of 1.8V, with a maximum supply voltage of 1.95V. The memory format is FLASH and it has been screened to meet AEC-Q100 and TS 16949 standards. It is also compliant with ROHS3 regulations.
S26KS512SDGBHA030 Features
Package / Case: 24-VBGA
S26KS512SDGBHA030 Applications
There are a lot of Cypress Semiconductor Corp S26KS512SDGBHA030 Memory applications.
personal computers
personal digital assistants
eSRAM
cell phones
Camcorders
embedded logic
Cache memory
networks
main computer memory
servers
This product is packaged in a tray and has 24 terminations. The voltage supply range is 1.7V to 1.95V and the terminal position is at the bottom. It has 1 function and operates at a supply voltage of 1.8V, with a maximum supply voltage of 1.95V. The memory format is FLASH and it has been screened to meet AEC-Q100 and TS 16949 standards. It is also compliant with ROHS3 regulations.
S26KS512SDGBHA030 Features
Package / Case: 24-VBGA
S26KS512SDGBHA030 Applications
There are a lot of Cypress Semiconductor Corp S26KS512SDGBHA030 Memory applications.
personal computers
personal digital assistants
eSRAM
cell phones
Camcorders
embedded logic
Cache memory
networks
main computer memory
servers
S26KS512SDGBHA030 More Descriptions
NOR Flash 512Mbit 64M X 8Bit 3V 24-Pin FBGA Tray
IC FLASH 512MBIT PARALLEL 24FBGA
512Mbit (Parallel) BGA-24 NOR FLASH ROHS
Nor/Tray |Cypress Infineon Technologies S26KS512SDGBHA030
S26KS512S - Parallel NOR HyperFl
IC FLASH 512MBIT PARALLEL 24FBGA
512Mbit (Parallel) BGA-24 NOR FLASH ROHS
Nor/Tray |Cypress Infineon Technologies S26KS512SDGBHA030
S26KS512S - Parallel NOR HyperFl
The three parts on the right have similar specifications to S26KS512SDGBHA030.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedSeriesPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeClock FrequencyAccess TimeMemory FormatMemory InterfaceOrganizationMemory WidthMemory DensityScreening LevelProgramming VoltageHeight Seated (Max)LengthWidthRoHS StatusECCN CodeView Compare
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S26KS512SDGBHA03013 WeeksSurface Mount24-VBGAYES-40°C~105°C TATray2017Automotive, AEC-Q100, HyperFlash™ KSyesActive3 (168 Hours)248542.32.00.51FLASH - NOR1.7V~1.95VBOTTOMNOT SPECIFIED11.8V1mmNOT SPECIFIEDR-PBGA-B241.95V1.7V512Mb 64M x 8Non-VolatileSYNCHRONOUS133MHz96nsFLASHParallel64MX88536870912 bitAEC-Q100; TS 169491.8V1mm8mm6mmROHS3 Compliant--
-
13 WeeksSurface Mount24-VBGAYES-40°C~105°C TATray2017Automotive, AEC-Q100, HyperFlash™ KL-Active3 (168 Hours)248542.32.00.51FLASH - NOR2.7V~3.6VBOTTOMNOT SPECIFIED13V1mmNOT SPECIFIEDR-PBGA-B243.6V2.7V512Mb 64M x 8Non-VolatileSYNCHRONOUS100MHz96nsFLASHParallel64MX88536870912 bit-3V1mm8mm6mmROHS3 Compliant-
-
13 WeeksSurface Mount24-VBGAYES-40°C~85°C TATray2016HyperFlash™ KS-Active3 (168 Hours)248542.32.00.51FLASH - NOR1.7V~1.95VBOTTOMNOT SPECIFIED11.8V-NOT SPECIFIEDR-PBGA-B241.95V1.7V128Mb 16M x 8Non-VolatileSYNCHRONOUS166MHz96nsFLASHParallel16MX88134217728 bitAEC-Q1001.8V---ROHS3 Compliant3A991.B.1.A
-
13 WeeksSurface Mount24-VBGAYES-40°C~125°C TATray2016Automotive, AEC-Q100, HyperFlash™ KLyesActive3 (168 Hours)248542.32.00.51FLASH - NOR2.7V~3.6VBOTTOMNOT SPECIFIED13V1mmNOT SPECIFIEDR-PBGA-B243.6V2.7V512Mb 64M x 8Non-VolatileSYNCHRONOUS100MHz96nsFLASHParallel64MX88536870912 bitAEC-Q100; TS 169493V1mm8mm6mmROHS3 Compliant-
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