Cypress Semiconductor Corp S26KS128SDGBHI030
- Part Number:
- S26KS128SDGBHI030
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3718589-S26KS128SDGBHI030
- Description:
- IC FLASH 128MBIT FBGA
- Datasheet:
- S26KS128SDGBHI030
Cypress Semiconductor Corp S26KS128SDGBHI030 technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp S26KS128SDGBHI030.
- Factory Lead Time13 Weeks
- Mounting TypeSurface Mount
- Package / Case24-VBGA
- Surface MountYES
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Published2017
- SeriesHyperFlash™ KS
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations24
- HTS Code8542.32.00.51
- TechnologyFLASH - NOR
- Voltage - Supply1.7V~1.95V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch1mm
- Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PBGA-B24
- Supply Voltage-Max (Vsup)2V
- Supply Voltage-Min (Vsup)1.7V
- Memory Size128Mb 16M x 8
- Memory TypeNon-Volatile
- Operating ModeSYNCHRONOUS
- Clock Frequency133MHz
- Access Time96ns
- Memory FormatFLASH
- Memory InterfaceParallel
- Organization16MX8
- Memory Width8
- Memory Density134217728 bit
- Programming Voltage1.8V
- Height Seated (Max)1mm
- Length8mm
- Width6mm
- RoHS StatusROHS3 Compliant
S26KS128SDGBHI030 Overview
The manufacturer of this component is Cypress Semiconductor Corp. It is a type of computer chip that falls under the category of Memory. It is designed to be mounted on the surface of a circuit board. It can operate within a temperature range of -40°C to 85°C. It is packaged in a tray. This specific model belongs to the HyperFlash™ KS series. It requires a supply voltage of 1.7V to 1.95V, with a maximum supply voltage of 2V. The memory size is 128Mb, with a structure of 16M x 8. It is a non-volatile type of memory, meaning it retains data even when there is no power. The length of the chip is 8mm and the width is 6mm.
S26KS128SDGBHI030 Features
Package / Case: 24-VBGA
S26KS128SDGBHI030 Applications
There are a lot of Cypress Semiconductor Corp S26KS128SDGBHI030 Memory applications.
telecommunications
printers
hard disk drive (HDD)
eSRAM
servers
personal computers
personal digital assistants
networking
mainframes
supercomputers
The manufacturer of this component is Cypress Semiconductor Corp. It is a type of computer chip that falls under the category of Memory. It is designed to be mounted on the surface of a circuit board. It can operate within a temperature range of -40°C to 85°C. It is packaged in a tray. This specific model belongs to the HyperFlash™ KS series. It requires a supply voltage of 1.7V to 1.95V, with a maximum supply voltage of 2V. The memory size is 128Mb, with a structure of 16M x 8. It is a non-volatile type of memory, meaning it retains data even when there is no power. The length of the chip is 8mm and the width is 6mm.
S26KS128SDGBHI030 Features
Package / Case: 24-VBGA
S26KS128SDGBHI030 Applications
There are a lot of Cypress Semiconductor Corp S26KS128SDGBHI030 Memory applications.
telecommunications
printers
hard disk drive (HDD)
eSRAM
servers
personal computers
personal digital assistants
networking
mainframes
supercomputers
S26KS128SDGBHI030 More Descriptions
NOR Flash Hyper 1.8V 128M-bit 16M x 8 96ns 24-Pin Fortified BGA Tray
NOR Flash 128Mbit 16M X 8Bit 3V 24-Pin FBGA Tray
S26KS512S - 3V 512MBIT, HYPERFLA
NOR Flash 128Mbit 16M X 8Bit 3V 24-Pin FBGA Tray
S26KS512S - 3V 512MBIT, HYPERFLA
The three parts on the right have similar specifications to S26KS128SDGBHI030.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedSeriesPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeClock FrequencyAccess TimeMemory FormatMemory InterfaceOrganizationMemory WidthMemory DensityProgramming VoltageHeight Seated (Max)LengthWidthRoHS StatusTime@Peak Reflow Temperature-Max (s)ECCN CodeScreening LevelPbfree CodeView Compare
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S26KS128SDGBHI03013 WeeksSurface Mount24-VBGAYES-40°C~85°C TATray2017HyperFlash™ KSActive3 (168 Hours)248542.32.00.51FLASH - NOR1.7V~1.95VBOTTOMNOT SPECIFIED11.8V1mmNOT SPECIFIEDR-PBGA-B242V1.7V128Mb 16M x 8Non-VolatileSYNCHRONOUS133MHz96nsFLASHParallel16MX88134217728 bit1.8V1mm8mm6mmROHS3 Compliant-----
-
13 WeeksSurface Mount24-VBGAYES-40°C~105°C TATray2017Automotive, AEC-Q100, HyperFlash™ KLActive3 (168 Hours)248542.32.00.51FLASH - NOR2.7V~3.6VBOTTOMNOT SPECIFIED13V1mm-R-PBGA-B243.6V2.7V128Mb 16M x 8Non-VolatileSYNCHRONOUS100MHz96nsFLASHParallel16MX88134217728 bit3V1mm8mm6mmROHS3 CompliantNOT SPECIFIED---
-
13 WeeksSurface Mount24-VBGAYES-40°C~85°C TATray2016HyperFlash™ KSActive3 (168 Hours)248542.32.00.51FLASH - NOR1.7V~1.95VBOTTOMNOT SPECIFIED11.8V-NOT SPECIFIEDR-PBGA-B241.95V1.7V128Mb 16M x 8Non-VolatileSYNCHRONOUS166MHz96nsFLASHParallel16MX88134217728 bit1.8V---ROHS3 Compliant-3A991.B.1.AAEC-Q100-
-
13 WeeksSurface Mount24-VBGAYES-40°C~125°C TATray2016Automotive, AEC-Q100, HyperFlash™ KLActive3 (168 Hours)248542.32.00.51FLASH - NOR2.7V~3.6VBOTTOMNOT SPECIFIED13V1mmNOT SPECIFIEDR-PBGA-B243.6V2.7V512Mb 64M x 8Non-VolatileSYNCHRONOUS100MHz96nsFLASHParallel64MX88536870912 bit3V1mm8mm6mmROHS3 Compliant--AEC-Q100; TS 16949yes
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