Cypress Semiconductor Corp S26KL128SDABHB020
- Part Number:
- S26KL128SDABHB020
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3718566-S26KL128SDABHB020
- Description:
- IC FLASH 128MBIT 100MHZ 24FBGA
- Datasheet:
- S26KL128SDABHB020
Cypress Semiconductor Corp S26KL128SDABHB020 technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp S26KL128SDABHB020.
- Factory Lead Time13 Weeks
- Mounting TypeSurface Mount
- Package / Case24-VBGA
- Surface MountYES
- Operating Temperature-40°C~105°C TA
- PackagingTray
- Published2017
- SeriesAutomotive, AEC-Q100, HyperFlash™ KL
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations24
- HTS Code8542.32.00.51
- TechnologyFLASH - NOR
- Voltage - Supply2.7V~3.6V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch1mm
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PBGA-B24
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.7V
- Memory Size128Mb 16M x 8
- Memory TypeNon-Volatile
- Operating ModeSYNCHRONOUS
- Clock Frequency100MHz
- Access Time96ns
- Memory FormatFLASH
- Memory InterfaceParallel
- Organization16MX8
- Memory Width8
- Memory Density134217728 bit
- Programming Voltage3V
- Height Seated (Max)1mm
- Length8mm
- Width6mm
- RoHS StatusROHS3 Compliant
S26KL128SDABHB020 Overview
The Moisture Sensitivity Level (MSL) of this particular product is rated at level 3, with a maximum exposure time of 168 hours. It has 24 terminations and utilizes FLASH - NOR technology. The terminal position is located at the bottom of the device. The supply voltage required for this product is 3V. The Time@Peak Reflow Temperature-Max (s) is not specified, indicating that it may vary depending on the specific application. This product is classified as Non-Volatile memory, specifically in the FLASH format with a width of 8. It is also important to note that this product is compliant with the ROHS3 regulations.
S26KL128SDABHB020 Features
Package / Case: 24-VBGA
S26KL128SDABHB020 Applications
There are a lot of Cypress Semiconductor Corp
S26KL128SDABHB020 Memory applications.
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
The Moisture Sensitivity Level (MSL) of this particular product is rated at level 3, with a maximum exposure time of 168 hours. It has 24 terminations and utilizes FLASH - NOR technology. The terminal position is located at the bottom of the device. The supply voltage required for this product is 3V. The Time@Peak Reflow Temperature-Max (s) is not specified, indicating that it may vary depending on the specific application. This product is classified as Non-Volatile memory, specifically in the FLASH format with a width of 8. It is also important to note that this product is compliant with the ROHS3 regulations.
S26KL128SDABHB020 Features
Package / Case: 24-VBGA
S26KL128SDABHB020 Applications
There are a lot of Cypress Semiconductor Corp
S26KL128SDABHB020 Memory applications.
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
S26KL128SDABHB020 More Descriptions
NOR Flash 128Mbit 16M X 8Bit 3V 24-Pin FBGA Tray
IC FLASH 128MBIT PAR 24FBGA
Nor/Tray |Cypress Infineon Technologies S26KL128SDABHB020
FLASH, 16MX8, 96NS, PBGA24
IC FLASH 128MBIT PAR 24FBGA
Nor/Tray |Cypress Infineon Technologies S26KL128SDABHB020
FLASH, 16MX8, 96NS, PBGA24
The three parts on the right have similar specifications to S26KL128SDABHB020.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedSeriesPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeClock FrequencyAccess TimeMemory FormatMemory InterfaceOrganizationMemory WidthMemory DensityProgramming VoltageHeight Seated (Max)LengthWidthRoHS StatusReflow Temperature-Max (s)Screening LevelPbfree CodeView Compare
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S26KL128SDABHB02013 WeeksSurface Mount24-VBGAYES-40°C~105°C TATray2017Automotive, AEC-Q100, HyperFlash™ KLActive3 (168 Hours)248542.32.00.51FLASH - NOR2.7V~3.6VBOTTOMNOT SPECIFIED13V1mmNOT SPECIFIEDR-PBGA-B243.6V2.7V128Mb 16M x 8Non-VolatileSYNCHRONOUS100MHz96nsFLASHParallel16MX88134217728 bit3V1mm8mm6mmROHS3 Compliant----
-
13 WeeksSurface Mount24-VBGAYES-40°C~125°C TATray2016HyperFlash™ KLActive3 (168 Hours)248542.32.00.51FLASH - NOR2.7V~3.6VBOTTOMNOT SPECIFIED13V--R-PBGA-B243.6V2.7V512Mb 64M x 8Non-VolatileSYNCHRONOUS100MHz96nsFLASHParallel64MX88536870912 bit3V---ROHS3 CompliantNOT SPECIFIEDAEC-Q100-
-
13 WeeksSurface Mount24-VBGAYES-40°C~85°C TATray2017HyperFlash™ KSActive3 (168 Hours)248542.32.00.51FLASH - NOR1.7V~1.95VBOTTOMNOT SPECIFIED11.8V1mm-R-PBGA-B242V1.7V128Mb 16M x 8Non-VolatileSYNCHRONOUS133MHz96nsFLASHParallel16MX88134217728 bit1.8V1mm8mm6mmROHS3 CompliantNOT SPECIFIED--
-
13 WeeksSurface Mount24-VBGAYES-40°C~125°C TATray2016Automotive, AEC-Q100, HyperFlash™ KLActive3 (168 Hours)248542.32.00.51FLASH - NOR2.7V~3.6VBOTTOMNOT SPECIFIED13V1mm-R-PBGA-B243.6V2.7V512Mb 64M x 8Non-VolatileSYNCHRONOUS100MHz96nsFLASHParallel64MX88536870912 bit3V1mm8mm6mmROHS3 CompliantNOT SPECIFIEDAEC-Q100; TS 16949yes
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