Cypress Semiconductor Corp S26KL512SDABHN020
- Part Number:
- S26KL512SDABHN020
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3722361-S26KL512SDABHN020
- Description:
- IC 512 MEG
- Datasheet:
- S26KL512SDABHN020
Cypress Semiconductor Corp S26KL512SDABHN020 technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp S26KL512SDABHN020.
- Factory Lead Time13 Weeks
- Mounting TypeSurface Mount
- Package / Case24-VBGA
- Surface MountYES
- Operating Temperature-40°C~125°C TA
- PackagingTray
- Published2016
- SeriesHyperFlash™ KL
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations24
- HTS Code8542.32.00.51
- TechnologyFLASH - NOR
- Voltage - Supply2.7V~3.6V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage3V
- Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PBGA-B24
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.7V
- Memory Size512Mb 64M x 8
- Memory TypeNon-Volatile
- Operating ModeSYNCHRONOUS
- Clock Frequency100MHz
- Access Time96ns
- Memory FormatFLASH
- Memory InterfaceParallel
- Organization64MX8
- Memory Width8
- Memory Density536870912 bit
- Screening LevelAEC-Q100
- Programming Voltage3V
- RoHS StatusROHS3 Compliant
S26KL512SDABHN020 Overview
Cypress Semiconductor Corp is the brand of this part, which falls under the Memory category. It is a Memory chip with a Moisture Sensitivity Level (MSL) of 3 (168 Hours) and a Terminal Position of BOTTOM. This chip has 1 function and operates at a Supply Voltage of 3V. It is a Non-Volatile Memory with an Access Time of 96ns and a Memory Format of FLASH. The Memory Width is 8 and it has been screened to meet AEC-Q100 standards. Additionally, it is ROHS3 Compliant, meeting the latest environmental regulations.
S26KL512SDABHN020 Features
Package / Case: 24-VBGA
S26KL512SDABHN020 Applications
There are a lot of Cypress Semiconductor Corp S26KL512SDABHN020 Memory applications.
mainframes
hard disk drive (HDD)
personal digital assistants
personal computers
eDRAM
printers
graphics card
Camcorders
multimedia computers
telecommunications
Cypress Semiconductor Corp is the brand of this part, which falls under the Memory category. It is a Memory chip with a Moisture Sensitivity Level (MSL) of 3 (168 Hours) and a Terminal Position of BOTTOM. This chip has 1 function and operates at a Supply Voltage of 3V. It is a Non-Volatile Memory with an Access Time of 96ns and a Memory Format of FLASH. The Memory Width is 8 and it has been screened to meet AEC-Q100 standards. Additionally, it is ROHS3 Compliant, meeting the latest environmental regulations.
S26KL512SDABHN020 Features
Package / Case: 24-VBGA
S26KL512SDABHN020 Applications
There are a lot of Cypress Semiconductor Corp S26KL512SDABHN020 Memory applications.
mainframes
hard disk drive (HDD)
personal digital assistants
personal computers
eDRAM
printers
graphics card
Camcorders
multimedia computers
telecommunications
S26KL512SDABHN020 More Descriptions
NOR Flash 512Mbit 64M X 8Bit 3V 24-Pin FBGA Tray
IC FLASH 512MBIT PARALLEL 24FBGA
512Mbit (Parallel) BGA-24 NOR FLASH ROHS
Nor/Tray |Cypress Infineon Technologies S26KL512SDABHN020
S26KL512S - 3V 512MBIT, HYPERFLA
IC FLASH 512MBIT PARALLEL 24FBGA
512Mbit (Parallel) BGA-24 NOR FLASH ROHS
Nor/Tray |Cypress Infineon Technologies S26KL512SDABHN020
S26KL512S - 3V 512MBIT, HYPERFLA
The three parts on the right have similar specifications to S26KL512SDABHN020.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedSeriesPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageReflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeClock FrequencyAccess TimeMemory FormatMemory InterfaceOrganizationMemory WidthMemory DensityScreening LevelProgramming VoltageRoHS StatusTerminal PitchHeight Seated (Max)LengthWidthPbfree CodeView Compare
-
S26KL512SDABHN02013 WeeksSurface Mount24-VBGAYES-40°C~125°C TATray2016HyperFlash™ KLActive3 (168 Hours)248542.32.00.51FLASH - NOR2.7V~3.6VBOTTOMNOT SPECIFIED13VNOT SPECIFIEDR-PBGA-B243.6V2.7V512Mb 64M x 8Non-VolatileSYNCHRONOUS100MHz96nsFLASHParallel64MX88536870912 bitAEC-Q1003VROHS3 Compliant------
-
13 WeeksSurface Mount24-VBGAYES-40°C~85°C TATray2017HyperFlash™ KSActive3 (168 Hours)248542.32.00.51FLASH - NOR1.7V~1.95VBOTTOMNOT SPECIFIED11.8VNOT SPECIFIEDR-PBGA-B242V1.7V128Mb 16M x 8Non-VolatileSYNCHRONOUS133MHz96nsFLASHParallel16MX88134217728 bit-1.8VROHS3 Compliant1mm1mm8mm6mm-
-
13 WeeksSurface Mount24-VBGAYES-40°C~105°C TATray2017Automotive, AEC-Q100, HyperFlash™ KLActive3 (168 Hours)248542.32.00.51FLASH - NOR2.7V~3.6VBOTTOMNOT SPECIFIED13VNOT SPECIFIEDR-PBGA-B243.6V2.7V512Mb 64M x 8Non-VolatileSYNCHRONOUS100MHz96nsFLASHParallel64MX88536870912 bit-3VROHS3 Compliant1mm1mm8mm6mm-
-
13 WeeksSurface Mount24-VBGAYES-40°C~125°C TATray2016Automotive, AEC-Q100, HyperFlash™ KLActive3 (168 Hours)248542.32.00.51FLASH - NOR2.7V~3.6VBOTTOMNOT SPECIFIED13VNOT SPECIFIEDR-PBGA-B243.6V2.7V512Mb 64M x 8Non-VolatileSYNCHRONOUS100MHz96nsFLASHParallel64MX88536870912 bitAEC-Q100; TS 169493VROHS3 Compliant1mm1mm8mm6mmyes
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