Cypress Semiconductor Corp S26KS128SDGBHN030
- Part Number:
- S26KS128SDGBHN030
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3835509-S26KS128SDGBHN030
- Description:
- IC 128 MEG
- Datasheet:
- S26KS128SDGBHN030
Cypress Semiconductor Corp S26KS128SDGBHN030 technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp S26KS128SDGBHN030.
- Factory Lead Time13 Weeks
- Mounting TypeSurface Mount
- Package / Case24-VBGA
- Surface MountYES
- Operating Temperature-40°C~125°C TA
- PackagingTray
- Published2016
- SeriesHyperFlash™ KS
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations24
- HTS Code8542.32.00.51
- TechnologyFLASH - NOR
- Voltage - Supply1.7V~1.95V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch1mm
- Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PBGA-B24
- Supply Voltage-Max (Vsup)2V
- Supply Voltage-Min (Vsup)1.7V
- Memory Size128Mb 16M x 8
- Memory TypeNon-Volatile
- Operating ModeSYNCHRONOUS
- Clock Frequency133MHz
- Access Time96ns
- Memory FormatFLASH
- Memory InterfaceParallel
- Organization16MX8
- Memory Width8
- Memory Density134217728 bit
- Programming Voltage1.8V
- Height Seated (Max)1mm
- Length8mm
- Width6mm
- RoHS StatusROHS3 Compliant
S26KS128SDGBHN030 Overview
This product is packaged in a tray and utilizes FLASH - NOR technology. It has 1 function and a terminal pitch of 1mm. The JESD-30 Code is R-PBGA-B24 and the supply voltage ranges from 1.7V to 2V. The memory format is FLASH and the maximum seated height is 1mm. This product is also ROHS3 compliant.
S26KS128SDGBHN030 Features
Package / Case: 24-VBGA
S26KS128SDGBHN030 Applications
There are a lot of Cypress Semiconductor Corp S26KS128SDGBHN030 Memory applications.
cell phones
embedded logic
hard disk drive (HDD)
Camcorders
eDRAM
eSRAM
printers
DVD disk buffer
servers
telecommunications
This product is packaged in a tray and utilizes FLASH - NOR technology. It has 1 function and a terminal pitch of 1mm. The JESD-30 Code is R-PBGA-B24 and the supply voltage ranges from 1.7V to 2V. The memory format is FLASH and the maximum seated height is 1mm. This product is also ROHS3 compliant.
S26KS128SDGBHN030 Features
Package / Case: 24-VBGA
S26KS128SDGBHN030 Applications
There are a lot of Cypress Semiconductor Corp S26KS128SDGBHN030 Memory applications.
cell phones
embedded logic
hard disk drive (HDD)
Camcorders
eDRAM
eSRAM
printers
DVD disk buffer
servers
telecommunications
S26KS128SDGBHN030 More Descriptions
IC FLASH 128MBIT PARALLEL 24FBGA
Nor/Tray |Cypress Infineon Technologies S26KS128SDGBHN030
S26KS512S - 3V 512MBIT, HYPERFLA
Nor/Tray |Cypress Infineon Technologies S26KS128SDGBHN030
S26KS512S - 3V 512MBIT, HYPERFLA
The three parts on the right have similar specifications to S26KS128SDGBHN030.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedSeriesPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeClock FrequencyAccess TimeMemory FormatMemory InterfaceOrganizationMemory WidthMemory DensityProgramming VoltageHeight Seated (Max)LengthWidthRoHS StatusPbfree CodeScreening LevelView Compare
-
S26KS128SDGBHN03013 WeeksSurface Mount24-VBGAYES-40°C~125°C TATray2016HyperFlash™ KSActive3 (168 Hours)248542.32.00.51FLASH - NOR1.7V~1.95VBOTTOMNOT SPECIFIED11.8V1mmNOT SPECIFIEDR-PBGA-B242V1.7V128Mb 16M x 8Non-VolatileSYNCHRONOUS133MHz96nsFLASHParallel16MX88134217728 bit1.8V1mm8mm6mmROHS3 Compliant---
-
13 WeeksSurface Mount24-VBGAYES-40°C~105°C TATray-Automotive, AEC-Q100, HyperFlash™ KSActive3 (168 Hours)248542.32.00.51FLASH - NOR1.7V~1.95VBOTTOMNOT SPECIFIED11.8V1mmNOT SPECIFIEDR-PBGA-B242V1.7V256Mb 32M x 8Non-VolatileSYNCHRONOUS133MHz96nsFLASHParallel32MX88268435456 bit1.8V1mm8mm6mmROHS3 Compliant--
-
13 WeeksSurface Mount24-VBGAYES-40°C~85°C TATray2017HyperFlash™ KSActive3 (168 Hours)248542.32.00.51FLASH - NOR1.7V~1.95VBOTTOMNOT SPECIFIED11.8V1mmNOT SPECIFIEDR-PBGA-B242V1.7V128Mb 16M x 8Non-VolatileSYNCHRONOUS133MHz96nsFLASHParallel16MX88134217728 bit1.8V1mm8mm6mmROHS3 Compliant--
-
13 WeeksSurface Mount24-VBGAYES-40°C~125°C TATray2016Automotive, AEC-Q100, HyperFlash™ KLActive3 (168 Hours)248542.32.00.51FLASH - NOR2.7V~3.6VBOTTOMNOT SPECIFIED13V1mmNOT SPECIFIEDR-PBGA-B243.6V2.7V512Mb 64M x 8Non-VolatileSYNCHRONOUS100MHz96nsFLASHParallel64MX88536870912 bit3V1mm8mm6mmROHS3 CompliantyesAEC-Q100; TS 16949
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