Toshiba Semiconductor and Storage RN2903FE(TE85L,F)

Name: RN2903FE(TE85L,F)
Brand: Toshiba Semiconductor and Storage
SKU: 3584815-RN2903FE(TE85L,F)
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: RN2903FE(TE85L,F)

Manufacturer:: Toshiba Semiconductor and Storage

Ventron No:: 3584815-RN2903FE(TE85L,F)

Description:: TRANS 2PNP PREBIAS 0.1W ES6

ECAD Model:

Datasheet:: RN2903FE(TE85L,F)

Specifications

Toshiba Semiconductor and Storage RN2903FE(TE85L,F) technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage RN2903FE(TE85L,F).

Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Transistor Element Material
SILICON
Packaging
Tape & Reel (TR)
Published
2014
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Subcategory
BIP General Purpose Small Signal
Max Power Dissipation
100mW
Reach Compliance Code
unknown
Number of Elements
2
Power - Max
100mW
Polarity/Channel Type
PNP
Transistor Type
2 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO)
300mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 10mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage
50V
Max Breakdown Voltage
50V
Frequency - Transition
200MHz
Resistor - Base (R1)
22k Ω
Resistor - Emitter Base (R2)
22k Ω
RoHS Status
RoHS Compliant

Description

RN2903FE(TE85L,F) Overview
This product is manufactured by Toshiba Semiconductor and Storage and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet RN2903FE(TE85L,F) or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RN2903FE(TE85L,F). We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

RN2903FE(TE85L,F) More Descriptions

TRANS 2PNP PREBIAS 0.1W ES6

Product Comparison

The three parts on the right have similar specifications to RN2903FE(TE85L,F).

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Transistor Element Material

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Subcategory

Max Power Dissipation

Reach Compliance Code

Number of Elements

Power - Max

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Max Breakdown Voltage

Frequency - Transition

Resistor - Base (R1)

Resistor - Emitter Base (R2)

RoHS Status

Number of Pins

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Polarity

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Continuous Collector Current

Height

Length

Width

Surface Mount

Power Dissipation-Max (Abs)

View Compare
RN2903FE(TE85L,F)

Toshiba Semiconductor and Storage

12 Weeks

Surface Mount

Surface Mount

SOT-563, SOT-666

SILICON

Tape & Reel (TR)

2014

Active

1 (Unlimited)

BIP General Purpose Small Signal

100mW

unknown

2

100mW

PNP

2 PNP - Pre-Biased (Dual)

300mV

100mA

70 @ 10mA 5V

100nA ICBO

300mV @ 250μA, 5mA

50V

50V

200MHz

22k Ω

22k Ω

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
RN2906,LF

Toshiba Semiconductor and Storage

12 Weeks

Surface Mount

Surface Mount

6-TSSOP, SC-88, SOT-363

-

Cut Tape (CT)

2014

Active

1 (Unlimited)

-

200mW

-

-

200mW

-

2 PNP - Pre-Biased (Dual)

300mV

100mA

80 @ 10mA 5V

500nA

300mV @ 250μA, 5mA

50V

50V

200MHz

4.7kOhms

47kOhms

RoHS Compliant

6

US6

150°C

-55°C

PNP

50V

100mA

-50V

-5V

80

-100mA

900μm

2mm

1.25mm

-

-

RN2903FE(TE85L,F) vs RN2906,LF
RN2902FE(T5L,F,T)

Toshiba Semiconductor and Storage

-

Surface Mount

Surface Mount

SOT-563, SOT-666

-

Tape & Reel (TR)

2014

Obsolete

1 (Unlimited)

-

100mW

-

-

100mW

-

2 PNP - Pre-Biased (Dual)

300mV

100mA

50 @ 10mA 5V

100nA ICBO

300mV @ 250μA, 5mA

50V

50V

200MHz

10k Ω

10k Ω

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RN2903FE(TE85L,F) vs RN2902FE(T5L,F,T)
RN2961FE(TE85L,F)

Toshiba Semiconductor and Storage

-

-

Surface Mount

SOT-563, SOT-666

SILICON

Tape & Reel (TR)

2014

Obsolete

1 (Unlimited)

BIP General Purpose Small Signal

-

unknown

2

100mW

PNP

2 PNP - Pre-Biased (Dual)

-

-

30 @ 10mA 5V

100nA ICBO

300mV @ 250μA, 5mA

-

-

200MHz

4.7k Ω

4.7k Ω

RoHS Compliant

-

-

-

-

-

50V

100mA

-

-

-

-

-

-

-

YES

0.1W

RN2903FE(TE85L,F) vs RN2961FE(TE85L,F)