Toshiba Semiconductor and Storage RN2970FE(TE85L,F)

Name: RN2970FE(TE85L,F)
Brand: Toshiba Semiconductor and Storage
SKU: 3068443-RN2970FE(TE85L,F)
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: RN2970FE(TE85L,F)

Manufacturer:: Toshiba Semiconductor and Storage

Ventron No:: 3068443-RN2970FE(TE85L,F)

Description:: TRANS 2PNP PREBIAS 0.1W ES6

ECAD Model:

Datasheet:: RN2970FE(TE85L,F)

Specifications

Toshiba Semiconductor and Storage RN2970FE(TE85L,F) technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage RN2970FE(TE85L,F).

Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Surface Mount
YES
Transistor Element Material
SILICON
Packaging
Tape & Reel (TR)
Published
2014
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Subcategory
BIP General Purpose Small Signal
Reach Compliance Code
unknown
Number of Elements
2
Power - Max
100mW
Polarity/Channel Type
PNP
Transistor Type
2 PNP - Pre-Biased (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max)
50V
Current - Collector (Ic) (Max)
100mA
Frequency - Transition
200MHz
Power Dissipation-Max (Abs)
0.1W
Resistor - Base (R1)
4.7k Ω
Resistor - Emitter Base (R2)
10k Ω
RoHS Status
RoHS Compliant

Description

RN2970FE(TE85L,F) Overview
This product is manufactured by Toshiba Semiconductor and Storage and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet RN2970FE(TE85L,F) or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RN2970FE(TE85L,F). We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

Product Comparison

The three parts on the right have similar specifications to RN2970FE(TE85L,F).

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Subcategory

Reach Compliance Code

Number of Elements

Power - Max

Polarity/Channel Type

Transistor Type

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Frequency - Transition

Power Dissipation-Max (Abs)

Resistor - Base (R1)

Resistor - Emitter Base (R2)

RoHS Status

Factory Lead Time

Mount

Max Power Dissipation

Collector Emitter Voltage (VCEO)

Max Collector Current

Collector Emitter Breakdown Voltage

Max Breakdown Voltage

Number of Pins

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Polarity

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Continuous Collector Current

Height

Length

Width

View Compare
RN2970FE(TE85L,F)

Toshiba Semiconductor and Storage

Surface Mount

SOT-563, SOT-666

YES

SILICON

Tape & Reel (TR)

2014

Obsolete

1 (Unlimited)

BIP General Purpose Small Signal

unknown

2

100mW

PNP

2 PNP - Pre-Biased (Dual)

120 @ 1mA 5V

100nA ICBO

300mV @ 250μA, 5mA

50V

100mA

200MHz

0.1W

4.7k Ω

10k Ω

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
RN2903FE(TE85L,F)

Toshiba Semiconductor and Storage

Surface Mount

SOT-563, SOT-666

-

SILICON

Tape & Reel (TR)

2014

Active

1 (Unlimited)

BIP General Purpose Small Signal

unknown

2

100mW

PNP

2 PNP - Pre-Biased (Dual)

70 @ 10mA 5V

100nA ICBO

300mV @ 250μA, 5mA

-

-

200MHz

-

22k Ω

22k Ω

RoHS Compliant

12 Weeks

Surface Mount

100mW

300mV

100mA

50V

50V

-

-

-

-

-

-

-

-

-

-

-

-

RN2970FE(TE85L,F) vs RN2903FE(TE85L,F)
RN2906,LF

Toshiba Semiconductor and Storage

Surface Mount

6-TSSOP, SC-88, SOT-363

-

-

Cut Tape (CT)

2014

Active

1 (Unlimited)

-

-

-

200mW

-

2 PNP - Pre-Biased (Dual)

80 @ 10mA 5V

500nA

300mV @ 250μA, 5mA

50V

100mA

200MHz

-

4.7kOhms

47kOhms

RoHS Compliant

12 Weeks

Surface Mount

200mW

300mV

100mA

50V

50V

6

US6

150°C

-55°C

PNP

-50V

-5V

80

-100mA

900μm

2mm

1.25mm

RN2970FE(TE85L,F) vs RN2906,LF
RN2961FE(TE85L,F)

Toshiba Semiconductor and Storage

Surface Mount

SOT-563, SOT-666

YES

SILICON

Tape & Reel (TR)

2014

Obsolete

1 (Unlimited)

BIP General Purpose Small Signal

unknown

2

100mW

PNP

2 PNP - Pre-Biased (Dual)

30 @ 10mA 5V

100nA ICBO

300mV @ 250μA, 5mA

50V

100mA

200MHz

0.1W

4.7k Ω

4.7k Ω

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RN2970FE(TE85L,F) vs RN2961FE(TE85L,F)