Toshiba Semiconductor and Storage RN2906,LF
- Part Number:
- RN2906,LF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Ventron No:
- 3584808-RN2906,LF
- Description:
- TRANS 2PNP PREBIAS 0.2W US6
- ECAD Model:
-
- Datasheet:
- RN2906,LF
Toshiba Semiconductor and Storage RN2906,LF technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage RN2906,LF.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Number of Pins6
- Supplier Device PackageUS6
- PackagingCut Tape (CT)
- Published2014
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Max Power Dissipation200mW
- PolarityPNP
- Power - Max200mW
- Transistor Type2 PNP - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)300mV
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA 5V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic300mV @ 250μA, 5mA
- Collector Emitter Breakdown Voltage50V
- Voltage - Collector Emitter Breakdown (Max)50V
- Current - Collector (Ic) (Max)100mA
- Max Breakdown Voltage50V
- Frequency - Transition200MHz
- Collector Base Voltage (VCBO)-50V
- Emitter Base Voltage (VEBO)-5V
- hFE Min80
- Resistor - Base (R1)4.7kOhms
- Continuous Collector Current-100mA
- Resistor - Emitter Base (R2)47kOhms
- Height900μm
- Length2mm
- Width1.25mm
- RoHS StatusRoHS Compliant
RN2906,LF Overview
This product is manufactured by Toshiba Semiconductor and Storage and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet RN2906,LF or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RN2906,LF. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Toshiba Semiconductor and Storage and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet RN2906,LF or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RN2906,LF. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
RN2906,LF More Descriptions
Trans GP BJT PNP 50V 0.1A 6-Pin US Embossed T/R
Trans Digital BJT PNP 50V 100mA 200mW 6-Pin US T/R
Module DC-DC 24V/48VIN 1-OUT 3.3V 36A 120W
Trans Digital BJT PNP 50V 100mA 200mW 6-Pin US T/R
Module DC-DC 24V/48VIN 1-OUT 3.3V 36A 120W
The three parts on the right have similar specifications to RN2906,LF.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackagePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureMax Power DissipationPolarityPower - MaxTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Max Breakdown VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinResistor - Base (R1)Continuous Collector CurrentResistor - Emitter Base (R2)HeightLengthWidthRoHS StatusSurface MountTransistor Element MaterialSubcategoryReach Compliance CodeNumber of ElementsPolarity/Channel TypePower Dissipation-Max (Abs)View Compare
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RN2906,LF12 WeeksSurface MountSurface Mount6-TSSOP, SC-88, SOT-3636US6Cut Tape (CT)2014Active1 (Unlimited)150°C-55°C200mWPNP200mW2 PNP - Pre-Biased (Dual)300mV100mA80 @ 10mA 5V500nA300mV @ 250μA, 5mA50V50V100mA50V200MHz-50V-5V804.7kOhms-100mA47kOhms900μm2mm1.25mmRoHS Compliant-------- -
-Surface MountSurface MountSOT-563, SOT-666--Tape & Reel (TR)2014Obsolete1 (Unlimited)--100mW-100mW2 PNP - Pre-Biased (Dual)300mV100mA50 @ 10mA 5V100nA ICBO300mV @ 250μA, 5mA50V--50V200MHz---10k Ω-10k Ω---RoHS Compliant-------
-
--Surface MountSOT-563, SOT-666--Tape & Reel (TR)2014Obsolete1 (Unlimited)----100mW2 PNP - Pre-Biased (Dual)--120 @ 1mA 5V100nA ICBO300mV @ 250μA, 5mA-50V100mA-200MHz---4.7k Ω-10k Ω---RoHS CompliantYESSILICONBIP General Purpose Small Signalunknown2PNP0.1W
-
--Surface MountSOT-563, SOT-666--Tape & Reel (TR)2014Obsolete1 (Unlimited)----100mW2 PNP - Pre-Biased (Dual)--30 @ 10mA 5V100nA ICBO300mV @ 250μA, 5mA-50V100mA-200MHz---4.7k Ω-4.7k Ω---RoHS CompliantYESSILICONBIP General Purpose Small Signalunknown2PNP0.1W
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