Powerex Inc. QJD1210011
- Part Number:
- QJD1210011
- Manufacturer:
- Powerex Inc.
- Ventron No:
- 3069828-QJD1210011
- Description:
- MOSFET 2N-CH 1200V 100A SIC
- ECAD Model:
-
- Datasheet:
- QJD1210011
Powerex Inc. QJD1210011 technical specifications, attributes, parameters and parts with similar specifications to Powerex Inc. QJD1210011.
- MountChassis Mount
- Mounting TypeChassis Mount
- Package / CaseModule
- Operating Temperature-40°C~175°C TJ
- PackagingBulk
- Published2014
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations20
- ECCN CodeEAR99
- Max Power Dissipation900W
- Terminal PositionUPPER
- Terminal FormUNSPECIFIED
- Reach Compliance Codeunknown
- JESD-30 CodeR-PUFM-X20
- Number of Elements2
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- FET Type2 N-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs25m Ω @ 100A, 20V
- Vgs(th) (Max) @ Id5V @ 10mA
- Input Capacitance (Ciss) (Max) @ Vds10200pF @ 800V
- Current - Continuous Drain (Id) @ 25°C100A Tc
- Gate Charge (Qg) (Max) @ Vgs500nC @ 20V
- Drain to Source Voltage (Vdss)1200V 1.2kV
- Continuous Drain Current (ID)100A
- Drain-source On Resistance-Max0.025Ohm
- Pulsed Drain Current-Max (IDM)250A
- DS Breakdown Voltage-Min1200V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureSilicon Carbide (SiC)
- RoHS StatusRoHS Compliant
QJD1210011 Overview
This product is manufactured by Powerex Inc. and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet QJD1210011 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of QJD1210011. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Powerex Inc. and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet QJD1210011 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of QJD1210011. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
QJD1210011 More Descriptions
SILICON CARBIDE MOSFET MODULES
MOSFET 2N-CH 1200V 100A SIC
Mosfet, Dual N-Ch, 1.2Kv, 100A, Module; Channel Type:Dual N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:1.2Kv; Rds(On) Test Voltage:20V; Gate Source Threshold Voltage Max:2.5V; Power Dissipation:900W Rohs Compliant: Yes |Powerex QJD1210011
MOSFET 2N-CH 1200V 100A SIC
Mosfet, Dual N-Ch, 1.2Kv, 100A, Module; Channel Type:Dual N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:1.2Kv; Rds(On) Test Voltage:20V; Gate Source Threshold Voltage Max:2.5V; Power Dissipation:900W Rohs Compliant: Yes |Powerex QJD1210011
The three parts on the right have similar specifications to QJD1210011.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeMax Power DissipationTerminal PositionTerminal FormReach Compliance CodeJESD-30 CodeNumber of ElementsConfigurationOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Continuous Drain Current (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinFET TechnologyFET FeatureRoHS StatusPower - MaxView Compare
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QJD1210011Chassis MountChassis MountModule-40°C~175°C TJBulk2014Active1 (Unlimited)20EAR99900WUPPERUNSPECIFIEDunknownR-PUFM-X202SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEENHANCEMENT MODEISOLATED2 N-Channel (Dual)SWITCHING25m Ω @ 100A, 20V5V @ 10mA10200pF @ 800V100A Tc500nC @ 20V1200V 1.2kV100A0.025Ohm250A1200VMETAL-OXIDE SEMICONDUCTORSilicon Carbide (SiC)RoHS Compliant-- -
Chassis MountChassis MountModule-40°C~150°C TJBulk-Obsolete1 (Unlimited)--520W--unknown-----2 N-Channel (Dual)-17m Ω @ 100A, 15V1.6V @ 34mA8200pF @ 10V-330nC @ 15V1200V 1.2kV100A----StandardRoHS Compliant520W
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Chassis MountChassis MountModule-40°C~150°C TJBulk-Obsolete1 (Unlimited)--415W--unknown-----2 N-Channel (Dual)-17m Ω @ 100A, 15V1.6V @ 34mA8200pF @ 10V-330nC @ 15V1200V 1.2kV100A----StandardRoHS Compliant415W
-
Chassis MountChassis MountModule-40°C~175°C TJBulk2014Active1 (Unlimited)--1.08kW--unknown-----2 N-Channel (Dual)-25m Ω @ 100A, 20V5V @ 10mA10200pF @ 800V100A Tc500nC @ 20V1200V 1.2kV100A----Silicon Carbide (SiC)RoHS Compliant1080W
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