QJD1210010

Powerex Inc. QJD1210010

Part Number:
QJD1210010
Manufacturer:
Powerex Inc.
Ventron No:
2848002-QJD1210010
Description:
MOSFET 2N-CH 1200V 100A SIC
ECAD Model:
Datasheet:
QJD1210010

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Specifications
Powerex Inc. QJD1210010 technical specifications, attributes, parameters and parts with similar specifications to Powerex Inc. QJD1210010.
  • Mount
    Chassis Mount
  • Mounting Type
    Chassis Mount
  • Package / Case
    Module
  • Operating Temperature
    -40°C~175°C TJ
  • Packaging
    Bulk
  • Published
    2014
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Power Dissipation
    1.08kW
  • Reach Compliance Code
    unknown
  • Power - Max
    1080W
  • FET Type
    2 N-Channel (Dual)
  • Rds On (Max) @ Id, Vgs
    25m Ω @ 100A, 20V
  • Vgs(th) (Max) @ Id
    5V @ 10mA
  • Input Capacitance (Ciss) (Max) @ Vds
    10200pF @ 800V
  • Current - Continuous Drain (Id) @ 25°C
    100A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    500nC @ 20V
  • Drain to Source Voltage (Vdss)
    1200V 1.2kV
  • Continuous Drain Current (ID)
    100A
  • FET Feature
    Silicon Carbide (SiC)
  • RoHS Status
    RoHS Compliant
Description
QJD1210010 Overview
This product is manufactured by Powerex Inc. and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet QJD1210010 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of QJD1210010. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
QJD1210010 More Descriptions
SILICON CARBIDE MOSFET MODULES
DUAL SiC MOSFET MODULES
MOSFET 2N-CH 1200V 100A SIC
Product Comparison
The three parts on the right have similar specifications to QJD1210010.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Power Dissipation
    Reach Compliance Code
    Power - Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Continuous Drain Current (ID)
    FET Feature
    RoHS Status
    Number of Terminations
    ECCN Code
    Terminal Position
    Terminal Form
    JESD-30 Code
    Number of Elements
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    FET Technology
    View Compare
  • QJD1210010
    QJD1210010
    Chassis Mount
    Chassis Mount
    Module
    -40°C~175°C TJ
    Bulk
    2014
    Active
    1 (Unlimited)
    1.08kW
    unknown
    1080W
    2 N-Channel (Dual)
    25m Ω @ 100A, 20V
    5V @ 10mA
    10200pF @ 800V
    100A Tc
    500nC @ 20V
    1200V 1.2kV
    100A
    Silicon Carbide (SiC)
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • QJD1210SA1
    Chassis Mount
    Chassis Mount
    Module
    -40°C~150°C TJ
    Bulk
    -
    Obsolete
    1 (Unlimited)
    520W
    unknown
    520W
    2 N-Channel (Dual)
    17m Ω @ 100A, 15V
    1.6V @ 34mA
    8200pF @ 10V
    -
    330nC @ 15V
    1200V 1.2kV
    100A
    Standard
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • QJD1210011
    Chassis Mount
    Chassis Mount
    Module
    -40°C~175°C TJ
    Bulk
    2014
    Active
    1 (Unlimited)
    900W
    unknown
    -
    2 N-Channel (Dual)
    25m Ω @ 100A, 20V
    5V @ 10mA
    10200pF @ 800V
    100A Tc
    500nC @ 20V
    1200V 1.2kV
    100A
    Silicon Carbide (SiC)
    RoHS Compliant
    20
    EAR99
    UPPER
    UNSPECIFIED
    R-PUFM-X20
    2
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    ISOLATED
    SWITCHING
    0.025Ohm
    250A
    1200V
    METAL-OXIDE SEMICONDUCTOR
  • QJD1210SA2
    Chassis Mount
    Chassis Mount
    Module
    -40°C~150°C TJ
    Bulk
    -
    Obsolete
    1 (Unlimited)
    415W
    unknown
    415W
    2 N-Channel (Dual)
    17m Ω @ 100A, 15V
    1.6V @ 34mA
    8200pF @ 10V
    -
    330nC @ 15V
    1200V 1.2kV
    100A
    Standard
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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