ON Semiconductor PZTA92T1G
- Part Number:
- PZTA92T1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2463081-PZTA92T1G
- Description:
- TRANS PNP 300V 0.5A SOT223
- Datasheet:
- PZTA92T1G
ON Semiconductor PZTA92T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor PZTA92T1G.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Surface MountYES
- Number of Pins4
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingCut Tape (CT)
- Published1997
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- TerminationSMD/SMT
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC-300V
- Max Power Dissipation1.5W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-500mA
- Frequency50MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberPZTA92
- Pin Count4
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1.5W
- Case ConnectionCOLLECTOR
- Gain Bandwidth Product50MHz
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)300V
- Max Collector Current50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 30mA 10V
- Current - Collector Cutoff (Max)250nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 2mA, 20mA
- Collector Emitter Breakdown Voltage300V
- Current - Collector (Ic) (Max)500mA
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage-900mV
- Max Breakdown Voltage300V
- Collector Base Voltage (VCBO)300V
- Emitter Base Voltage (VEBO)5V
- hFE Min25
- Height1.57mm
- Length6.5mm
- Width3.5mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
PZTA92T1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 30mA 10V.With a collector emitter saturation voltage of -900mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 2mA, 20mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.A transition frequency of 50MHz is present in the part.There is a breakdown input voltage of 300V volts that it can take.Collector current can be as low as 50mA volts at its maximum.
PZTA92T1G Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of -900mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 50MHz
PZTA92T1G Applications
There are a lot of ON Semiconductor
PZTA92T1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 30mA 10V.With a collector emitter saturation voltage of -900mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 2mA, 20mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.A transition frequency of 50MHz is present in the part.There is a breakdown input voltage of 300V volts that it can take.Collector current can be as low as 50mA volts at its maximum.
PZTA92T1G Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of -900mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 50MHz
PZTA92T1G Applications
There are a lot of ON Semiconductor
PZTA92T1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
PZTA92T1G More Descriptions
Bipolar (BJT) Transistor PNP 300V 500mA 50MHz 1.5W Surface Mount SOT-223
High Voltage PNP Bipolar Transistor
Trans GP BJT PNP 300V 0.05A 4-Pin(3 Tab) SOT-223 T/R - Product that comes on tape, but is not reeled
Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-261AA
PZT Series 300 V 50 mA SMT PNP Silicon Transistor - SOT-223
250nA 300V 1.5W 500mA 25@1mA10V 50MHz 500mV@20mA2mA PNP 150¡Í@(Tj) SOT-223 Bipolar Transistors - BJT ROHS
Transistor, PNP, 300V, 0.5A, SOT223,REEL; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-300V; Transition Frequency ft:50MHz; Power
Transistor Polarity:Pnp; Collector Emitter Voltage Max:300V; Continuous Collector Current:50Ma; Power Dissipation:1.5W; Transistor Mounting:Surface Mount; No. Of Pins:4Pins; Transition Frequency:50Mhz; Dc Current Gain Hfe Min:40Hfe Rohs Compliant: Yes |Onsemi PZTA92T1G.
High Voltage PNP Bipolar Transistor
Trans GP BJT PNP 300V 0.05A 4-Pin(3 Tab) SOT-223 T/R - Product that comes on tape, but is not reeled
Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-261AA
PZT Series 300 V 50 mA SMT PNP Silicon Transistor - SOT-223
250nA 300V 1.5W 500mA 25@1mA10V 50MHz 500mV@20mA2mA PNP 150¡Í@(Tj) SOT-223 Bipolar Transistors - BJT ROHS
Transistor, PNP, 300V, 0.5A, SOT223,REEL; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-300V; Transition Frequency ft:50MHz; Power
Transistor Polarity:Pnp; Collector Emitter Voltage Max:300V; Continuous Collector Current:50Ma; Power Dissipation:1.5W; Transistor Mounting:Surface Mount; No. Of Pins:4Pins; Transition Frequency:50Mhz; Dc Current Gain Hfe Min:40Hfe Rohs Compliant: Yes |Onsemi PZTA92T1G.
The three parts on the right have similar specifications to PZTA92T1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionGain Bandwidth ProductTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCurrent - Collector (Ic) (Max)Transition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal FinishHTS CodeQualification StatusConfigurationTransistor ApplicationPolarity/Channel TypeFrequency - TransitionReach Compliance CodeWeightView Compare
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PZTA92T1GACTIVE (Last Updated: 2 days ago)8 WeeksTinSurface MountTO-261-4, TO-261AAYES4SILICON150°C TJCut Tape (CT)1997e3yesActive1 (Unlimited)4SMD/SMTEAR99Other Transistors-300V1.5WDUALGULL WING260-500mA50MHz40PZTA9241Single1.5WCOLLECTOR50MHzPNP300V50mA40 @ 30mA 10V250nA ICBO500mV @ 2mA, 20mA300V500mA50MHz-900mV300V300V5V251.57mm6.5mm3.5mmNo SVHCNoROHS3 CompliantLead Free----------
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ACTIVE (Last Updated: 2 days ago)15 Weeks-Surface MountTO-261-4, TO-261AAYES3SILICON-55°C~150°C TJTape & Reel (TR)2017e3yesActive1 (Unlimited)3-EAR99Other Transistors80V-DUALGULL WINGNOT SPECIFIED500mA-NOT SPECIFIEDPZTA06-1-1WCOLLECTOR-NPN--100 @ 100mA 1V100nA250mV @ 10mA, 100mA80V500mA100MHz----------ROHS3 CompliantLead FreeTin (Sn)8541.21.00.95Not QualifiedSINGLEAMPLIFIERNPN100MHz--
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LAST SHIPMENTS (Last Updated: 2 days ago)--Surface MountTO-261-4, TO-261AAYES4SILICON150°C TJCut Tape (CT)1998e0noObsolete1 (Unlimited)4-EAR99Other Transistors300V1.5WDUALGULL WING245500mA-30PZTA4241Single-COLLECTOR50MHzNPN300V500mA40 @ 30mA 10V100nA ICBO500mV @ 2mA, 20mA300V-50MHz500mV300V300V6V25-----Non-RoHS CompliantContains LeadTin/Lead (Sn/Pb)-Not Qualified--NPN-not_compliant-
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ACTIVE (Last Updated: 2 days ago)8 WeeksTinSurface MountTO-261-4, TO-261AAYES4SILICON150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)4-EAR99Other Transistors300V1.5WDUALGULL WING260500mA50MHz40PZTA4241Single1.5WCOLLECTOR50MHzNPN300V500mA40 @ 30mA 10V100nA ICBO500mV @ 2mA, 20mA300V-50MHz500mV300V300V6V251.57mm6.5mm3.5mmNo SVHCNoROHS3 CompliantLead Free-----NPN--4.535924g
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