PZTA42T1

ON Semiconductor PZTA42T1

Part Number:
PZTA42T1
Manufacturer:
ON Semiconductor
Ventron No:
2846442-PZTA42T1
Description:
TRANS NPN 300V 0.5A SOT223
ECAD Model:
Datasheet:
PZTA42T1

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Specifications
ON Semiconductor PZTA42T1 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor PZTA42T1.
  • Lifecycle Status
    LAST SHIPMENTS (Last Updated: 2 days ago)
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-261-4, TO-261AA
  • Surface Mount
    YES
  • Number of Pins
    4
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Cut Tape (CT)
  • Published
    1998
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    300V
  • Max Power Dissipation
    1.5W
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    245
  • Reach Compliance Code
    not_compliant
  • Current Rating
    500mA
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    PZTA42
  • Pin Count
    4
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Case Connection
    COLLECTOR
  • Gain Bandwidth Product
    50MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    300V
  • Max Collector Current
    500mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    40 @ 30mA 10V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 2mA, 20mA
  • Collector Emitter Breakdown Voltage
    300V
  • Transition Frequency
    50MHz
  • Collector Emitter Saturation Voltage
    500mV
  • Max Breakdown Voltage
    300V
  • Collector Base Voltage (VCBO)
    300V
  • Emitter Base Voltage (VEBO)
    6V
  • hFE Min
    25
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
PZTA42T1 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 30mA 10V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 2mA, 20mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.In the part, the transition frequency is 50MHz.This device can take an input voltage of 300V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.

PZTA42T1 Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz


PZTA42T1 Applications
There are a lot of ON Semiconductor
PZTA42T1 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
PZTA42T1 More Descriptions
Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-261AA
Trans GP BJT NPN 300V 0.05A 4-Pin (3 Tab) SOT-223 T/R
Transistor NPN PZTA42T1 ON SEMI milliampere=500 V=300 SOT223
Res Thick Film 1206 10 Ohm 1% 0.25W(1/4W) ±100ppm/C Pad SMD Automotive T/R
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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