ON Semiconductor PZTA42T1
- Part Number:
- PZTA42T1
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2846442-PZTA42T1
- Description:
- TRANS NPN 300V 0.5A SOT223
- Datasheet:
- PZTA42T1
ON Semiconductor PZTA42T1 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor PZTA42T1.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 days ago)
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Surface MountYES
- Number of Pins4
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingCut Tape (CT)
- Published1998
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- SubcategoryOther Transistors
- Voltage - Rated DC300V
- Max Power Dissipation1.5W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)245
- Reach Compliance Codenot_compliant
- Current Rating500mA
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberPZTA42
- Pin Count4
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Case ConnectionCOLLECTOR
- Gain Bandwidth Product50MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)300V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 30mA 10V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 2mA, 20mA
- Collector Emitter Breakdown Voltage300V
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage500mV
- Max Breakdown Voltage300V
- Collector Base Voltage (VCBO)300V
- Emitter Base Voltage (VEBO)6V
- hFE Min25
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
PZTA42T1 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 30mA 10V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 2mA, 20mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.In the part, the transition frequency is 50MHz.This device can take an input voltage of 300V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
PZTA42T1 Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
PZTA42T1 Applications
There are a lot of ON Semiconductor
PZTA42T1 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 30mA 10V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 2mA, 20mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.In the part, the transition frequency is 50MHz.This device can take an input voltage of 300V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
PZTA42T1 Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
PZTA42T1 Applications
There are a lot of ON Semiconductor
PZTA42T1 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
PZTA42T1 More Descriptions
Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-261AA
Trans GP BJT NPN 300V 0.05A 4-Pin (3 Tab) SOT-223 T/R
Transistor NPN PZTA42T1 ON SEMI milliampere=500 V=300 SOT223
Res Thick Film 1206 10 Ohm 1% 0.25W(1/4W) ±100ppm/C Pad SMD Automotive T/R
Trans GP BJT NPN 300V 0.05A 4-Pin (3 Tab) SOT-223 T/R
Transistor NPN PZTA42T1 ON SEMI milliampere=500 V=300 SOT223
Res Thick Film 1206 10 Ohm 1% 0.25W(1/4W) ±100ppm/C Pad SMD Automotive T/R
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