Nexperia USA Inc. PUMH30,115
- Part Number:
- PUMH30,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2461958-PUMH30,115
- Description:
- TRANS 2NPN PREBIAS 0.3W 6TSSOP
- ECAD Model:
-
- Datasheet:
- PUMH30,115
Nexperia USA Inc. PUMH30,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PUMH30,115.
- Factory Lead Time4 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Number of Pins6
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-65°C
- HTS Code8541.21.00.75
- Max Power Dissipation300mW
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count6
- Number of Elements2
- PolarityNPN
- Element ConfigurationDual
- Transistor Type2 NPN - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 20mA 5V
- Current - Collector Cutoff (Max)1μA
- Vce Saturation (Max) @ Ib, Ic150mV @ 500μA, 10mA
- Collector Emitter Breakdown Voltage50V
- Resistor - Base (R1)2.2k Ω
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
PUMH30,115 Overview
This product is manufactured by Nexperia USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet PUMH30,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PUMH30,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Nexperia USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet PUMH30,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PUMH30,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PUMH30,115 More Descriptions
Trans Digital BJT NPN 50V 100mA Automotive 6-Pin TSSOP T/R
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
PEMH30; PUMH30 - NPN/NPN double resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
PEMH30; PUMH30 - NPN/NPN double resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open
The three parts on the right have similar specifications to PUMH30,115.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsPackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishMax Operating TemperatureMin Operating TemperatureHTS CodeMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsPolarityElement ConfigurationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageResistor - Base (R1)Radiation HardeningRoHS StatusLead FreeECCN CodeAdditional FeatureTransistor ApplicationResistor - Emitter Base (R2)Surface MountTransistor Element MaterialJESD-30 CodeQualification StatusOperating Temperature (Max)ConfigurationPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Polarity/Channel TypeView Compare
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PUMH30,1154 WeeksSurface MountSurface Mount6-TSSOP, SC-88, SOT-3636Tape & Reel (TR)2006e3Active1 (Unlimited)6Tin (Sn)150°C-65°C8541.21.00.75300mWGULL WING2603062NPNDual2 NPN - Pre-Biased (Dual)50V100mA30 @ 20mA 5V1μA150mV @ 500μA, 10mA50V2.2k ΩNoROHS3 CompliantLead Free--------------- -
4 WeeksSurface MountSurface Mount6-TSSOP, SC-88, SOT-3636Tape & Reel (TR)2005e3Active1 (Unlimited)6Tin (Sn)150°C-65°C-300mWGULL WING2603062NPNDual2 NPN - Pre-Biased (Dual)50V20mA80 @ 5mA 5V1μA150mV @ 250μA, 5mA50V100k ΩNoROHS3 CompliantLead FreeEAR99BUILT IN BIAS RESISTOR RATIO 1SWITCHING100k Ω----------
-
4 Weeks-Surface Mount6-TSSOP, SC-88, SOT-363-Tape & Reel (TR)2009e3Active1 (Unlimited)6Tin (Sn)----GULL WING2604062NPN-2 NPN - Pre-Biased (Dual)--60 @ 5mA 5V1μA150mV @ 500μA, 10mA-47k Ω-ROHS3 Compliant-EAR99BUILT IN BIAS RESISTANCE RATIO IS 0.47SWITCHING22k ΩYESSILICONR-PDSO-G6Not Qualified150°CSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR300mW50V100mA-
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4 Weeks-Surface Mount6-TSSOP, SC-88, SOT-3636Tape & Reel (TR)2009e3Active1 (Unlimited)6Tin (Sn)----GULL WING2604062--2 NPN - Pre-Biased (Dual)--100 @ 1mA 5V1μA150mV @ 500μA, 10mA-47k Ω-ROHS3 Compliant-EAR99BUILT IN BIAS RESISTORSWITCHING-YESSILICON-Not Qualified150°CSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR300mW50V100mANPN
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