Nexperia USA Inc. PUMH13,115
- Part Number:
- PUMH13,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2844517-PUMH13,115
- Description:
- TRANS 2NPN PREBIAS 0.3W 6TSSOP
- Datasheet:
- PUMH13,115
Nexperia USA Inc. PUMH13,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PUMH13,115.
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Surface MountYES
- Number of Pins6
- Transistor Element MaterialSILICON
- PackagingTape & Reel (TR)
- Published2011
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Additional FeatureBUILT-IN BIAS RESISTOR RATIO IS 10
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count6
- Qualification StatusNot Qualified
- Operating Temperature (Max)150°C
- Number of Elements2
- PolarityNPN
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
- Power - Max300mW
- Transistor ApplicationSWITCHING
- Transistor Type2 NPN - Pre-Biased (Dual)
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA 5V
- Current - Collector Cutoff (Max)1μA
- Vce Saturation (Max) @ Ib, Ic100mV @ 250μA, 5mA
- Voltage - Collector Emitter Breakdown (Max)50V
- Current - Collector (Ic) (Max)100mA
- Resistor - Base (R1)4.7k Ω
- Resistor - Emitter Base (R2)47k Ω
- RoHS StatusROHS3 Compliant
PUMH13,115 Overview
This product is manufactured by Nexperia USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet PUMH13,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PUMH13,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Nexperia USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet PUMH13,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PUMH13,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PUMH13,115 More Descriptions
PUMH13 - NPN/NPN double Resistor-Equipped Transistor (RET); R1= 4.7 kΩ, R2 = 47 kΩ
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
Trans Digital BJT NPN 50V 100mA Automotive 6-Pin TSSOP T/R
PUMH13 - NPN/PNP resistor-equipped transistors; R1 = 2.2 kO, R2 = 47 kO
PUMH13 Series 30 V 100 mA Surface Mount NPN Digital Transistor - SOT-363
2 NPN pre-biased (Dual) 300mW 100mA 50V SOT-363 Digital Transistors ROHS
BRT TRANSISTOR, NPN, 50V, 100MA, 47KOHM / OPEN, 6-SOT-363; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:47kohm; RF Transistor Case:SOT-363; No. of Pins:6 ;RoHS Compliant: Yes
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 100 / DC Current Gain (hFE) = 100 / Power Dissipation (Pd) mW = 300 / Typical Input Resistor kOhm = 4.7 / Typical Resistor Ratio kOhm = 10 / Collector-Base Voltage (Vcbo) V = 50 / Collector-Emitter Voltage (Vceo) V = 50 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Max. °C = 150 / Operating Temperature Min. °C = -65 / Package Type = SOT-363 / Pins = 6 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 100 / Operating Frequency MHz = 230
TRANSISTOR, DIGITAL, DUAL, SOT-363; Digital Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: PUMH13 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); DC Collector Current: 100mA; DC Current Gain hFE: 100hFE; Full Power Rating Temperature: 25°C; Module Configuration: Dual; No. of Pins: 6Pins; No. of Transistors: 2; Operating Temperature Max: 150°C; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Power Dissipation Pd: 200mW; Transistor Case Style: SOT-363; Transistor Polarity: NPN; Transistor Type: Bias Resistor (BRT); Transition Frequency ft: 230MHz; Voltage Vcbo: 50V
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
Trans Digital BJT NPN 50V 100mA Automotive 6-Pin TSSOP T/R
PUMH13 - NPN/PNP resistor-equipped transistors; R1 = 2.2 kO, R2 = 47 kO
PUMH13 Series 30 V 100 mA Surface Mount NPN Digital Transistor - SOT-363
2 NPN pre-biased (Dual) 300mW 100mA 50V SOT-363 Digital Transistors ROHS
BRT TRANSISTOR, NPN, 50V, 100MA, 47KOHM / OPEN, 6-SOT-363; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:47kohm; RF Transistor Case:SOT-363; No. of Pins:6 ;RoHS Compliant: Yes
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 100 / DC Current Gain (hFE) = 100 / Power Dissipation (Pd) mW = 300 / Typical Input Resistor kOhm = 4.7 / Typical Resistor Ratio kOhm = 10 / Collector-Base Voltage (Vcbo) V = 50 / Collector-Emitter Voltage (Vceo) V = 50 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Max. °C = 150 / Operating Temperature Min. °C = -65 / Package Type = SOT-363 / Pins = 6 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 100 / Operating Frequency MHz = 230
TRANSISTOR, DIGITAL, DUAL, SOT-363; Digital Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: PUMH13 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); DC Collector Current: 100mA; DC Current Gain hFE: 100hFE; Full Power Rating Temperature: 25°C; Module Configuration: Dual; No. of Pins: 6Pins; No. of Transistors: 2; Operating Temperature Max: 150°C; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Power Dissipation Pd: 200mW; Transistor Case Style: SOT-363; Transistor Polarity: NPN; Transistor Type: Bias Resistor (BRT); Transition Frequency ft: 230MHz; Voltage Vcbo: 50V
The three parts on the right have similar specifications to PUMH13,115.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialPackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountQualification StatusOperating Temperature (Max)Number of ElementsPolarityConfigurationPower - MaxTransistor ApplicationTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Resistor - Base (R1)Resistor - Emitter Base (R2)RoHS StatusBase Part NumberReference StandardTransition FrequencyMountMax Operating TemperatureMin Operating TemperatureHTS CodeMax Power DissipationElement ConfigurationCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageRadiation HardeningLead FreeWeightMax Output CurrentOperating Supply VoltageZener VoltageMax Breakdown VoltageVCEsat-MaxCollector-Base Capacitance-MaxHeightLengthWidthREACH SVHCView Compare
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PUMH13,1154 WeeksSurface Mount6-TSSOP, SC-88, SOT-363YES6SILICONTape & Reel (TR)2011e3Active1 (Unlimited)6EAR99Tin (Sn)BUILT-IN BIAS RESISTOR RATIO IS 10GULL WING260406Not Qualified150°C2NPNSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR300mWSWITCHING2 NPN - Pre-Biased (Dual)100 @ 10mA 5V1μA100mV @ 250μA, 5mA50V100mA4.7k Ω47k ΩROHS3 Compliant--------------------------
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4 WeeksSurface Mount6-TSSOP, SC-88, SOT-363YES6SILICONTape & Reel (TR)2001e3Active1 (Unlimited)6EAR99Tin (Sn)BUILT IN BIAS RESISTOR RATIO IS 1GULL WING260306--2NPNSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR300mWSWITCHING2 NPN - Pre-Biased (Dual)30 @ 5mA 5V1μA150mV @ 500μA, 10mA50V100mA10k Ω10k ΩROHS3 CompliantMH11AEC-Q101230MHz----------------------
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4 WeeksSurface Mount6-TSSOP, SC-88, SOT-363-6-Tape & Reel (TR)2006e3Active1 (Unlimited)6-Tin (Sn)-GULL WING260306--2NPN---2 NPN - Pre-Biased (Dual)30 @ 20mA 5V1μA150mV @ 500μA, 10mA--2.2k Ω-ROHS3 Compliant---Surface Mount150°C-65°C8541.21.00.75300mWDual50V100mA50VNoLead Free-----------
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4 WeeksSurface Mount6-TSSOP, SC-88, SOT-363-6-Tape & Reel (TR)2003e3Active1 (Unlimited)6EAR99Tin (Sn)BUILT-IN BIAS RESISTORGULL WING260406--2NPN--SWITCHING2 NPN - Pre-Biased (Dual)200 @ 1mA 5V1μA150mV @ 500μA, 10mA--10k Ω-ROHS3 CompliantP*MH4--Surface Mount150°C-65°C8541.21.00.95300mWDual50V100mA50VNoLead Free4.535924g100A50V12V50V0.3 V3.5pF6.35mm6.35mm6.35mmNo SVHC
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