PUMH18,115

Nexperia USA Inc. PUMH18,115

Part Number:
PUMH18,115
Manufacturer:
Nexperia USA Inc.
Ventron No:
3553669-PUMH18,115
Description:
TRANS 2NPN PREBIAS 0.3W 6TSSOP
ECAD Model:
Datasheet:
PUMH18,115

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Specifications
Nexperia USA Inc. PUMH18,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PUMH18,115.
  • Factory Lead Time
    4 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Number of Pins
    6
  • Packaging
    Tape & Reel (TR)
  • Published
    2005
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -65°C
  • Max Power Dissipation
    300mW
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    6
  • Number of Elements
    2
  • Polarity
    NPN
  • Element Configuration
    Dual
  • Power Dissipation
    300mW
  • Transistor Application
    SWITCHING
  • Transistor Type
    2 NPN - Pre-Biased (Dual)
  • Collector Emitter Voltage (VCEO)
    50V
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    50 @ 10mA 5V
  • Current - Collector Cutoff (Max)
    1μA
  • Vce Saturation (Max) @ Ib, Ic
    100mV @ 500μA, 10mA
  • Collector Emitter Breakdown Voltage
    50V
  • Collector Emitter Saturation Voltage
    100mV
  • Max Breakdown Voltage
    50V
  • Collector Base Voltage (VCBO)
    50V
  • Emitter Base Voltage (VEBO)
    7V
  • hFE Min
    50
  • Max Junction Temperature (Tj)
    150°C
  • Resistor - Base (R1)
    4.7k Ω
  • Resistor - Emitter Base (R2)
    10k Ω
  • Ambient Temperature Range High
    150°C
  • Height
    1.1mm
  • Length
    2.2mm
  • Width
    1.35mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
PUMH18,115 Overview
This product is manufactured by Nexperia USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet PUMH18,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PUMH18,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PUMH18,115 More Descriptions
Trans Digital BJT NPN 50V 100mA Automotive 6-Pin TSSOP T/R
PEMH18 Series 50 V 100 mA SMT NPN/NPN Resistor-Equipped Transistor - TSSOP-6
PEMH18; PUMH18 - NPN/NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ
RF Transistor, DUAL NPN, 50V, 0.1A, , TSSOP;
BRT TRANSISTOR, NPN, 50V, 100MA, 22KOHM / OPEN, 6-SOT-363; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:22kohm; RF Transistor Case:SOT-363; No. of Pins:6 ;RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to PUMH18,115.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Max Operating Temperature
    Min Operating Temperature
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Polarity
    Element Configuration
    Power Dissipation
    Transistor Application
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Max Junction Temperature (Tj)
    Resistor - Base (R1)
    Resistor - Emitter Base (R2)
    Ambient Temperature Range High
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Transistor Element Material
    Additional Feature
    Qualification Status
    Operating Temperature (Max)
    Configuration
    Power - Max
    Polarity/Channel Type
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    HTS Code
    Weight
    Base Part Number
    Max Output Current
    Operating Supply Voltage
    Zener Voltage
    VCEsat-Max
    Collector-Base Capacitance-Max
    REACH SVHC
    View Compare
  • PUMH18,115
    PUMH18,115
    4 Weeks
    Surface Mount
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    6
    Tape & Reel (TR)
    2005
    e3
    Active
    1 (Unlimited)
    6
    EAR99
    Tin (Sn)
    150°C
    -65°C
    300mW
    GULL WING
    260
    30
    6
    2
    NPN
    Dual
    300mW
    SWITCHING
    2 NPN - Pre-Biased (Dual)
    50V
    100mA
    50 @ 10mA 5V
    1μA
    100mV @ 500μA, 10mA
    50V
    100mV
    50V
    50V
    7V
    50
    150°C
    4.7k Ω
    10k Ω
    150°C
    1.1mm
    2.2mm
    1.35mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • PUMH14,115
    4 Weeks
    -
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    6
    Tape & Reel (TR)
    2009
    e3
    Active
    1 (Unlimited)
    6
    EAR99
    Tin (Sn)
    -
    -
    -
    GULL WING
    260
    40
    6
    2
    -
    -
    -
    SWITCHING
    2 NPN - Pre-Biased (Dual)
    -
    -
    100 @ 1mA 5V
    1μA
    150mV @ 500μA, 10mA
    -
    -
    -
    -
    -
    -
    -
    47k Ω
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    YES
    SILICON
    BUILT IN BIAS RESISTOR
    Not Qualified
    150°C
    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
    300mW
    NPN
    50V
    100mA
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • PUMH30,115
    4 Weeks
    Surface Mount
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    6
    Tape & Reel (TR)
    2006
    e3
    Active
    1 (Unlimited)
    6
    -
    Tin (Sn)
    150°C
    -65°C
    300mW
    GULL WING
    260
    30
    6
    2
    NPN
    Dual
    -
    -
    2 NPN - Pre-Biased (Dual)
    50V
    100mA
    30 @ 20mA 5V
    1μA
    150mV @ 500μA, 10mA
    50V
    -
    -
    -
    -
    -
    -
    2.2k Ω
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    8541.21.00.75
    -
    -
    -
    -
    -
    -
    -
    -
  • PUMH4,115
    4 Weeks
    Surface Mount
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    6
    Tape & Reel (TR)
    2003
    e3
    Active
    1 (Unlimited)
    6
    EAR99
    Tin (Sn)
    150°C
    -65°C
    300mW
    GULL WING
    260
    40
    6
    2
    NPN
    Dual
    -
    SWITCHING
    2 NPN - Pre-Biased (Dual)
    50V
    100mA
    200 @ 1mA 5V
    1μA
    150mV @ 500μA, 10mA
    50V
    -
    50V
    -
    -
    -
    -
    10k Ω
    -
    -
    6.35mm
    6.35mm
    6.35mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    BUILT-IN BIAS RESISTOR
    -
    -
    -
    -
    -
    -
    -
    8541.21.00.95
    4.535924g
    P*MH4
    100A
    50V
    12V
    0.3 V
    3.5pF
    No SVHC
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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