Nexperia USA Inc. PUMH4,115
- Part Number:
- PUMH4,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2461766-PUMH4,115
- Description:
- TRANS 2NPN PREBIAS 0.3W 6TSSOP
- Datasheet:
- PUMH4,115
Nexperia USA Inc. PUMH4,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PUMH4,115.
- Factory Lead Time4 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Number of Pins6
- Weight4.535924g
- PackagingTape & Reel (TR)
- Published2003
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-65°C
- Additional FeatureBUILT-IN BIAS RESISTOR
- HTS Code8541.21.00.95
- Max Power Dissipation300mW
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberP*MH4
- Pin Count6
- Max Output Current100A
- Operating Supply Voltage50V
- Number of Elements2
- PolarityNPN
- Element ConfigurationDual
- Transistor ApplicationSWITCHING
- Zener Voltage12V
- Transistor Type2 NPN - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 1mA 5V
- Current - Collector Cutoff (Max)1μA
- Vce Saturation (Max) @ Ib, Ic150mV @ 500μA, 10mA
- Collector Emitter Breakdown Voltage50V
- Max Breakdown Voltage50V
- Resistor - Base (R1)10k Ω
- VCEsat-Max0.3 V
- Collector-Base Capacitance-Max3.5pF
- Height6.35mm
- Length6.35mm
- Width6.35mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
The Nexperia Transistors - Bipolar (BJT) - Arrays, Pre-Biased PUMH4,115 is a two-NPN transistor array in a 6-pin TSSOP package. It is designed to provide a pre-biased solution for low-power applications. The PUMH4,115 has a maximum power dissipation of 0.3W and a maximum collector-emitter voltage of 30V. It is designed to provide a low-cost, low-power solution for applications such as audio amplifiers, motor control, and power management. The PUMH4,115 is also suitable for use in automotive and industrial applications.
Features of the Nexperia Transistors - Bipolar (BJT) - Arrays, Pre-Biased PUMH4,115 include:
• Low-cost, low-power solution
• Maximum power dissipation of 0.3W
• Maximum collector-emitter voltage of 30V
• Suitable for use in automotive and industrial applications
Applications of the Nexperia Transistors - Bipolar (BJT) - Arrays, Pre-Biased PUMH4,115 include:
• Audio amplifiers
• Motor control
• Power management
• Automotive and industrial applications
Features of the Nexperia Transistors - Bipolar (BJT) - Arrays, Pre-Biased PUMH4,115 include:
• Low-cost, low-power solution
• Maximum power dissipation of 0.3W
• Maximum collector-emitter voltage of 30V
• Suitable for use in automotive and industrial applications
Applications of the Nexperia Transistors - Bipolar (BJT) - Arrays, Pre-Biased PUMH4,115 include:
• Audio amplifiers
• Motor control
• Power management
• Automotive and industrial applications
PUMH4,115 More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
Trans Digital BJT NPN 50V 100mA 300mW Automotive 6-Pin TSSOP T/R
PUMH4 Series 50 V 100 mA SMT NPN Digital Transistor - SOT-363
PEMH4; PUMH4 - NPN/NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = open
2 NPN pre-biased (Dual) 300mW 100mA 50V SOT-363 Digital Transistors ROHS
Bipolar Transistor Array; Module Configuration:Dual; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:50V; Power Dissipation, Pd:200mW; DC Collector Current:100mA; DC Current Gain Max (hfe):200 ;RoHS Compliant: Yes
TRANSISTOR, DIGITAL, DUAL, SOT-363; Digital Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: -; Resistor
Trans Digital BJT NPN 50V 100mA 300mW Automotive 6-Pin TSSOP T/R
PUMH4 Series 50 V 100 mA SMT NPN Digital Transistor - SOT-363
PEMH4; PUMH4 - NPN/NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = open
2 NPN pre-biased (Dual) 300mW 100mA 50V SOT-363 Digital Transistors ROHS
Bipolar Transistor Array; Module Configuration:Dual; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:50V; Power Dissipation, Pd:200mW; DC Collector Current:100mA; DC Current Gain Max (hfe):200 ;RoHS Compliant: Yes
TRANSISTOR, DIGITAL, DUAL, SOT-363; Digital Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: -; Resistor
The three parts on the right have similar specifications to PUMH4,115.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightPackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureAdditional FeatureHTS CodeMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountMax Output CurrentOperating Supply VoltageNumber of ElementsPolarityElement ConfigurationTransistor ApplicationZener VoltageTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageMax Breakdown VoltageResistor - Base (R1)VCEsat-MaxCollector-Base Capacitance-MaxHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountTransistor Element MaterialQualification StatusOperating Temperature (Max)ConfigurationPower - MaxPolarity/Channel TypeVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)JESD-30 CodeResistor - Emitter Base (R2)View Compare
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PUMH4,1154 WeeksSurface MountSurface Mount6-TSSOP, SC-88, SOT-36364.535924gTape & Reel (TR)2003e3Active1 (Unlimited)6EAR99Tin (Sn)150°C-65°CBUILT-IN BIAS RESISTOR8541.21.00.95300mWGULL WING26040P*MH46100A50V2NPNDualSWITCHING12V2 NPN - Pre-Biased (Dual)50V100mA200 @ 1mA 5V1μA150mV @ 500μA, 10mA50V50V10k Ω0.3 V3.5pF6.35mm6.35mm6.35mmNo SVHCNoROHS3 CompliantLead Free------------
-
4 Weeks-Surface Mount6-TSSOP, SC-88, SOT-3636-Tape & Reel (TR)2009e3Active1 (Unlimited)6EAR99Tin (Sn)--BUILT IN BIAS RESISTOR--GULL WING26040-6--1--SWITCHING-2 NPN - Pre-Biased (Dual)--100 @ 1mA 5V1μA150mV @ 500μA, 10mA--22k Ω-------ROHS3 Compliant-YESSILICONNot Qualified150°CSINGLE WITH BUILT-IN RESISTOR300mWNPN50V100mA--
-
4 Weeks-Surface Mount6-TSSOP, SC-88, SOT-363--Tape & Reel (TR)2005e3Active1 (Unlimited)6EAR99Tin (Sn)--BUILT IN BIAS RESISTOR RATIO 1--GULL WING26040-6--2--SWITCHING-2 NPN - Pre-Biased (Dual)--30 @ 20mA 5V1μA150mV @ 500μA, 10mA--2.2k Ω-------ROHS3 Compliant-YESSILICONNot Qualified150°CSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR300mWNPN50V100mAR-PDSO-G62.2k Ω
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4 WeeksSurface MountSurface Mount6-TSSOP, SC-88, SOT-3636-Tape & Reel (TR)2006e3Active1 (Unlimited)6-Tin (Sn)150°C-65°C-8541.21.00.75300mWGULL WING26030-6--2NPNDual--2 NPN - Pre-Biased (Dual)50V100mA30 @ 20mA 5V1μA150mV @ 500μA, 10mA50V-2.2k Ω------NoROHS3 CompliantLead Free-----------
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