Infineon Technologies PTFB192503ELV1R250XTMA1

Name: PTFB192503ELV1R250XTMA1
Brand: Infineon Technologies
SKU: 3069920-PTFB192503ELV1R250XTMA1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: PTFB192503ELV1R250XTMA1

Manufacturer:: Infineon Technologies

Ventron No:: 3069920-PTFB192503ELV1R250XTMA1

Description:: IC AMP RF LDMOS

ECAD Model:

Datasheet:: PTFB192503ELV1R250XTMA1

Specifications

Infineon Technologies PTFB192503ELV1R250XTMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies PTFB192503ELV1R250XTMA1.

Factory Lead Time
12 Weeks
Published
2016
Part Status
Active
ECCN Code
EAR99
Voltage - Rated
65V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Frequency
1.99GHz
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Current - Test
1.9A
Gain
19 dB
Power - Output
50W
Voltage - Test
30V
RoHS Status
RoHS Compliant

Description

PTFB192503ELV1R250XTMA1 Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet PTFB192503ELV1R250XTMA1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PTFB192503ELV1R250XTMA1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

PTFB192503ELV1R250XTMA1 More Descriptions

LDMOS FET, High Power RF, 240W, 1.93-1.99GHz, H-33288-6 Pkg, T/R 250
IC AMP RF LDMOS
High Power RF LDMOS FET, 240 W, 30 V, 1930 1990 MHz | Summary of Features: Broadband input and output matching; Enhanced for use in DPD error correction systems; Typical two-carrier WCDMA performance at 1990 MHz, 30 V - Average output power = 50 W - Linear Gain = 19 dB - Efficiency = 28% - IMD = -35 dBc; Typical CW performance, 1990 MHz, 30 V - Output power at P1dB = 240 W - Efficiency = 55%; Increased negative gate-source voltage range for improved performance in Doherty peaking amplifiers; Capable of handling 10:1 VSWR @ 30 V, 240 W (CW) output power; Integrated ESD protection. Human Body Model, Class 2 (minimum); Pb-free and RoHS compliant; Package: H-33288-6, bolt-down

Product Comparison

The three parts on the right have similar specifications to PTFB192503ELV1R250XTMA1.

Image

Part Number

Manufacturer

Factory Lead Time

Published

Part Status

ECCN Code

Voltage - Rated

Peak Reflow Temperature (Cel)

Frequency

Time@Peak Reflow Temperature-Max (s)

Current - Test

Gain

Power - Output

Voltage - Test

RoHS Status

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Packaging

Pbfree Code

Moisture Sensitivity Level (MSL)

Number of Terminations

Additional Feature

Terminal Position

Terminal Form

Pin Count

JESD-30 Code

Operating Supply Voltage

Number of Elements

Configuration

Operating Mode

Case Connection

Transistor Application

Halogen Free

Polarity/Channel Type

Transistor Type

DS Breakdown Voltage-Min

FET Technology

Lead Free

View Compare
PTFB192503ELV1R250XTMA1

Infineon Technologies

12 Weeks

2016

Active

EAR99

65V

NOT SPECIFIED

1.99GHz

NOT SPECIFIED

1.9A

19 dB

50W

30V

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
PTFB091507FHV1R0XTMA1

Infineon Technologies

12 Weeks

2016

Active

EAR99

65V

NOT SPECIFIED

960MHz

NOT SPECIFIED

1.2A

20 dB

50W

28V

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

PTFB192503ELV1R250XTMA1 vs PTFB091507FHV1R0XTMA1
PTFB082817FHV1XWSA1

Infineon Technologies

12 Weeks

2010

Obsolete

EAR99

65V

NOT SPECIFIED

821MHz

NOT SPECIFIED

2.15A

19.3dB

60W

-

RoHS Compliant

2-Flatpack, Fin Leads, Flanged

YES

3

SILICON

Tray

yes

1 (Unlimited)

2

HIGH RELIABILITY

QUAD

UNSPECIFIED

4

R-CQFP-X2

28V

1

SINGLE

ENHANCEMENT MODE

SOURCE

AMPLIFIER

Halogen Free

N-CHANNEL

LDMOS

65V

METAL-OXIDE SEMICONDUCTOR

Lead Free

PTFB192503ELV1R250XTMA1 vs PTFB082817FHV1XWSA1
PTFB211803ELV1R0XTMA1

Infineon Technologies

12 Weeks

2016

Obsolete

EAR99

65V

NOT SPECIFIED

2.17GHz

NOT SPECIFIED

1.3A

17.5dB

40W

30V

RoHS Compliant

H-33288-6

-

-

-

Strip

-

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

LDMOS

-

-

-

PTFB192503ELV1R250XTMA1 vs PTFB211803ELV1R0XTMA1