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Infineon Technologies PTFB183404EV1R0XTMA1
- Part Number:
- PTFB183404EV1R0XTMA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2848428-PTFB183404EV1R0XTMA1
- Description:
- IC AMP RF LDMOS H-36275-8
- ECAD Model:
-
- Datasheet:
- PTFB183404EV1R0XTMA1
Infineon Technologies PTFB183404EV1R0XTMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies PTFB183404EV1R0XTMA1.
- Factory Lead Time16 Weeks
- Published2013
- Part StatusActive
- ECCN CodeEAR99
- Voltage - Rated65V
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Frequency1.88GHz
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Current - Test2.6A
- Gain17 dB
- Power - Output80W
- Voltage - Test30V
- RoHS StatusRoHS Compliant
PTFB183404EV1R0XTMA1 Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet PTFB183404EV1R0XTMA1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PTFB183404EV1R0XTMA1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet PTFB183404EV1R0XTMA1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PTFB183404EV1R0XTMA1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PTFB183404EV1R0XTMA1 More Descriptions
LDMOS FET, High Power RF, 340W, 1.805-1.88GHz, H-36275-8 Pkg, T/R 50
IC AMP RF LDMOS H-36275-8
High Power RF LDMOS FETs, 340 W, 30 V, 1805 1880 MHz | Summary of Features: Broadband input and output matching; Wide video bandwidth; Typical single-carrier WCDMA performance at 1880 MHz, 30 V - Output power = 125 W - Efficiency = 31% - Gain = 17 dB,PAR = 5.5 dB @ 0.01% CCDF probability - ACPR @ 5 MHz= -37 dBc; Increased negative gate-source voltage range for improved performance in Doherty amplifiers; Capable of handling 10:1 VSWR @ 30 V, 340 W (CW) output power; Integrated ESD protection; Excellent thermal stability; Pb-free and RoHS compliant; Package: H-36275-8, bolt-down
IC AMP RF LDMOS H-36275-8
High Power RF LDMOS FETs, 340 W, 30 V, 1805 1880 MHz | Summary of Features: Broadband input and output matching; Wide video bandwidth; Typical single-carrier WCDMA performance at 1880 MHz, 30 V - Output power = 125 W - Efficiency = 31% - Gain = 17 dB,PAR = 5.5 dB @ 0.01% CCDF probability - ACPR @ 5 MHz= -37 dBc; Increased negative gate-source voltage range for improved performance in Doherty amplifiers; Capable of handling 10:1 VSWR @ 30 V, 340 W (CW) output power; Integrated ESD protection; Excellent thermal stability; Pb-free and RoHS compliant; Package: H-36275-8, bolt-down
The three parts on the right have similar specifications to PTFB183404EV1R0XTMA1.
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ImagePart NumberManufacturerFactory Lead TimePublishedPart StatusECCN CodeVoltage - RatedPeak Reflow Temperature (Cel)FrequencyTime@Peak Reflow Temperature-Max (s)Current - TestGainPower - OutputVoltage - TestRoHS StatusMountNumber of PinsMax Operating TemperatureMin Operating TemperatureGate to Source Voltage (Vgs)PackagingNumber of ElementsFrequency (Max)Package / CaseSurface MountTransistor Element MaterialPbfree CodeMoisture Sensitivity Level (MSL)Number of TerminationsAdditional FeatureTerminal PositionTerminal FormPin CountJESD-30 CodeOperating Supply VoltageConfigurationOperating ModeCase ConnectionTransistor ApplicationHalogen FreePolarity/Channel TypeTransistor TypeDS Breakdown Voltage-MinFET TechnologyLead FreeView Compare
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PTFB183404EV1R0XTMA116 Weeks2013ActiveEAR9965VNOT SPECIFIED1.88GHzNOT SPECIFIED2.6A17 dB80W30VRoHS Compliant------------------------------- -
12 Weeks2016ActiveEAR99-NOT SPECIFIED-NOT SPECIFIED----RoHS CompliantSurface Mount3200°C-40°C10V-------------------------
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12 Weeks2016ActiveEAR99-NOT SPECIFIED-NOT SPECIFIED----RoHS CompliantScrew7200°C-40°C-Tape and Reel11.88GHz----------------------
-
12 Weeks2010ObsoleteEAR9965VNOT SPECIFIED821MHzNOT SPECIFIED2.15A19.3dB60W-RoHS Compliant-3---Tray1-2-Flatpack, Fin Leads, FlangedYESSILICONyes1 (Unlimited)2HIGH RELIABILITYQUADUNSPECIFIED4R-CQFP-X228VSINGLEENHANCEMENT MODESOURCEAMPLIFIERHalogen FreeN-CHANNELLDMOS65VMETAL-OXIDE SEMICONDUCTORLead Free
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