Infineon Technologies PTFB182503FLV2R250XTMA1

Name: PTFB182503FLV2R250XTMA1
Brand: Infineon Technologies
SKU: 2477669-PTFB182503FLV2R250XTMA1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: PTFB182503FLV2R250XTMA1

Manufacturer:: Infineon Technologies

Ventron No:: 2477669-PTFB182503FLV2R250XTMA1

Description:: IC AMP RF LDMOS

ECAD Model:

Datasheet:: PTFB182503FLV2R250XTMA1

Specifications

Infineon Technologies PTFB182503FLV2R250XTMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies PTFB182503FLV2R250XTMA1.

Factory Lead Time
12 Weeks
Mount
Surface Mount
Number of Pins
5
Packaging
Tape and Reel
Published
2010
Part Status
Active
ECCN Code
EAR99
Max Operating Temperature
200°C
Min Operating Temperature
-40°C
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Number of Elements
1
Frequency (Max)
1.88GHz
RoHS Status
RoHS Compliant

Description

PTFB182503FLV2R250XTMA1 Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet PTFB182503FLV2R250XTMA1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PTFB182503FLV2R250XTMA1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

PTFB182503FLV2R250XTMA1 More Descriptions

LDMOS FET, High Power RF, 240W, 1.805-1.88GHz, H-34288-4/2 Pkg, TR 250
Trans RF MOSFET N-CH 65V 5-Pin Case 34288-4/2 T/R
High Power RF LDMOS FET, 240 W, 1805 1880 MHz | Summary of Features: Broadband internal input and output matching; Enhanced for use in DPD error correction systems; Typical two-carrier WCDMA performance, 1880 MHz, 30 V - Average output power = 50 W - Linear gain = 19 dB - Drain efficiency = 28 % - Intermodulation distortion = 35 dBc; Typical CW performance, 1880 MHz, 30 V - Output power at P1dB = 240 W - Efficiency = 55%; Increased negative gate-source voltage range for improved performance in Doherty peaking amplifiers; Integrated ESD protection. Human Body Model, Class 2 (minimum); Capable of handling 10:1 VSWR @ 30 V, 240 W (CW) output power; Pb-free, RoHS compliant; Package: H-34288-4/2, earless

Product Comparison

The three parts on the right have similar specifications to PTFB182503FLV2R250XTMA1.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Number of Pins

Packaging

Published

Part Status

ECCN Code

Max Operating Temperature

Min Operating Temperature

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Number of Elements

Frequency (Max)

RoHS Status

Gate to Source Voltage (Vgs)

Package / Case

Surface Mount

Transistor Element Material

Pbfree Code

Moisture Sensitivity Level (MSL)

Number of Terminations

Voltage - Rated

Additional Feature

Terminal Position

Terminal Form

Frequency

Pin Count

JESD-30 Code

Operating Supply Voltage

Configuration

Operating Mode

Case Connection

Current - Test

Transistor Application

Halogen Free

Polarity/Channel Type

Transistor Type

Gain

DS Breakdown Voltage-Min

Power - Output

FET Technology

Lead Free

Voltage - Test

View Compare
PTFB182503FLV2R250XTMA1

Infineon Technologies

12 Weeks

Surface Mount

5

Tape and Reel

2010

Active

EAR99

200°C

-40°C

NOT SPECIFIED

NOT SPECIFIED

1

1.88GHz

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
PTFB072707FHV1R250XTMA1

Infineon Technologies

12 Weeks

Surface Mount

3

-

2016

Active

EAR99

200°C

-40°C

NOT SPECIFIED

NOT SPECIFIED

-

-

RoHS Compliant

10V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

PTFB182503FLV2R250XTMA1 vs PTFB072707FHV1R250XTMA1
PTFB082817FHV1XWSA1

Infineon Technologies

12 Weeks

-

3

Tray

2010

Obsolete

EAR99

-

-

NOT SPECIFIED

NOT SPECIFIED

1

-

RoHS Compliant

-

2-Flatpack, Fin Leads, Flanged

YES

SILICON

yes

1 (Unlimited)

2

65V

HIGH RELIABILITY

QUAD

UNSPECIFIED

821MHz

4

R-CQFP-X2

28V

SINGLE

ENHANCEMENT MODE

SOURCE

2.15A

AMPLIFIER

Halogen Free

N-CHANNEL

LDMOS

19.3dB

65V

60W

METAL-OXIDE SEMICONDUCTOR

Lead Free

-

PTFB182503FLV2R250XTMA1 vs PTFB082817FHV1XWSA1
PTFB211803ELV1R0XTMA1

Infineon Technologies

12 Weeks

-

-

Strip

2016

Obsolete

EAR99

-

-

NOT SPECIFIED

NOT SPECIFIED

-

-

RoHS Compliant

-

H-33288-6

-

-

-

1 (Unlimited)

-

65V

-

-

-

2.17GHz

-

-

-

-

-

-

1.3A

-

-

-

LDMOS

17.5dB

-

40W

-

-

30V

PTFB182503FLV2R250XTMA1 vs PTFB211803ELV1R0XTMA1