PN2222ABU

Fairchild/ON Semiconductor PN2222ABU

Part Number:
PN2222ABU
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2462911-PN2222ABU
Description:
TRANS NPN 40V 1A TO-92 CASE
ECAD Model:
Datasheet:
PN2222ABU

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Fairchild/ON Semiconductor PN2222ABU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor PN2222ABU.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    6 Weeks
  • Contact Plating
    Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA)
  • Number of Pins
    3
  • Weight
    179mg
  • Transistor Element Material
    SILICON
  • Manufacturer Package Identifier
    MKT-ZA03DREV3
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Bulk
  • Published
    2007
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    40V
  • Max Power Dissipation
    625mW
  • Terminal Position
    BOTTOM
  • Current Rating
    500mA
  • Frequency
    300MHz
  • Base Part Number
    PN2222
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    625mW
  • Turn On Delay Time
    35 ns
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    300MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Turn-Off Delay Time
    250 ns
  • Collector Emitter Voltage (VCEO)
    40V
  • Max Collector Current
    600mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 150mA 10V
  • Current - Collector Cutoff (Max)
    10nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    1V @ 50mA, 500mA
  • Collector Emitter Breakdown Voltage
    40V
  • Current - Collector (Ic) (Max)
    1A
  • Transition Frequency
    300MHz
  • Collector Emitter Saturation Voltage
    1V
  • Collector Base Voltage (VCBO)
    75V
  • Emitter Base Voltage (VEBO)
    6V
  • hFE Min
    40
  • Turn Off Time-Max (toff)
    285ns
  • Height
    5.33mm
  • Length
    5.2mm
  • Width
    4.19mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Contains Lead
Description
PN2222ABU Description


PN2222ABU is a kind of NPN bipolar transistor designed for small signal general purpose and switching applications. It is one of the most widely used semiconductor devices in the integrated circuits. Moreover, it can also be used as a medium power amplifier and switching requiring collector currents up to 500 mA.

PN2222ABU Features


Small size
Light weight
High reliability
Low input impedance


PN2222ABU Applications


Radio and television
Household appliances
Electronic instruments
Automatic control devices
PN2222ABU More Descriptions
Transistor General Purpose BJT NPN 40 Volt 1 Amp 3-Pin TO-92 Bulk
Bipolar Transistors - BJT NPN Transistor General Purpose
PN2222 Series NPN 625 mW 40 V 1A Through Hole General Purpose Transistor-TO-92-3
Amplifier, NPN GP, BJT, 40V, 1A, TO92, 3-pin, 500mA, -55 to 150C, PN2222A | ON Semiconductor PN2222ABU
On Semi PN2222ABU TO92 NPN Transistor
40V 625mW 1A 100@150mA10V 300MHz 1V@500mA50mA NPN -55¡Í~ 150¡Í@(Tj) TO-92-3L Bipolar Transistors - BJT ROHS
NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA.Sourced from Process 19.
TRANSISTOR, BIPOL, NPN, 40V, TO-226AA-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 625mW; DC Collector Current: 1A; DC Current Gain hFE: 35hFE; Tr
Transistor, Npn, 40V, 0.6A, To-226Aa; Transistor Polarity:Npn; Collector Emitter Voltage Max:40V; Continuous Collector Current:600Ma; Power Dissipation:625Mw; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Onsemi PN2222ABU.
Product Comparison
The three parts on the right have similar specifications to PN2222ABU.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Manufacturer Package Identifier
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Position
    Current Rating
    Frequency
    Base Part Number
    Number of Elements
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    Transistor Application
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Turn-Off Delay Time
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Current - Collector (Ic) (Max)
    Transition Frequency
    Collector Emitter Saturation Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Turn Off Time-Max (toff)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Terminal Finish
    HTS Code
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Configuration
    Power - Max
    Voltage - Collector Emitter Breakdown (Max)
    Frequency - Transition
    Power Dissipation-Max (Abs)
    VCEsat-Max
    Turn On Time-Max (ton)
    Collector-Base Capacitance-Max
    Supplier Device Package
    View Compare
  • PN2222ABU
    PN2222ABU
    ACTIVE (Last Updated: 2 days ago)
    6 Weeks
    Tin
    Through Hole
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA)
    3
    179mg
    SILICON
    MKT-ZA03DREV3
    -55°C~150°C TJ
    Bulk
    2007
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    40V
    625mW
    BOTTOM
    500mA
    300MHz
    PN2222
    1
    Single
    625mW
    35 ns
    SWITCHING
    300MHz
    NPN
    NPN
    250 ns
    40V
    600mA
    100 @ 150mA 10V
    10nA ICBO
    1V @ 50mA, 500mA
    40V
    1A
    300MHz
    1V
    75V
    6V
    40
    285ns
    5.33mm
    5.2mm
    4.19mm
    No SVHC
    No
    ROHS3 Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • PN2222A,412
    -
    -
    -
    -
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA)
    -
    -
    SILICON
    -
    150°C TJ
    Bulk
    2003
    e3
    -
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    -
    -
    BOTTOM
    -
    -
    PN2222A
    1
    -
    -
    -
    SWITCHING
    -
    NPN
    NPN
    -
    -
    -
    100 @ 150mA 10V
    10nA ICBO
    1V @ 50mA, 500mA
    -
    600mA
    300MHz
    -
    -
    -
    -
    250ns
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    NO
    Matte Tin (Sn)
    8541.21.00.75
    250
    40
    3
    O-PBCY-T3
    Not Qualified
    SINGLE
    500mW
    40V
    300MHz
    0.625W
    1 V
    35ns
    8pF
    -
  • PN2222_J18Z
    -
    -
    -
    -
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA)
    -
    -
    -
    -
    150°C TJ
    Bulk
    -
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    PN2222
    -
    -
    -
    -
    -
    -
    -
    NPN
    -
    -
    -
    100 @ 150mA 10V
    10nA ICBO
    1V @ 50mA, 500mA
    -
    600mA
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    625mW
    30V
    300MHz
    -
    -
    -
    -
    TO-92-3
  • PN2222ARLRPG
    -
    -
    -
    -
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    -
    -
    SILICON
    -
    -55°C~150°C TJ
    Tape & Box (TB)
    -
    e1
    yes
    Obsolete
    1 (Unlimited)
    3
    -
    -
    -
    -
    BOTTOM
    -
    -
    -
    1
    -
    -
    -
    SWITCHING
    -
    NPN
    NPN
    -
    -
    -
    100 @ 150mA 10V
    10nA ICBO
    1V @ 50mA, 500mA
    -
    600mA
    300MHz
    -
    -
    -
    -
    285ns
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    NO
    TIN SILVER COPPER
    -
    260
    40
    3
    O-PBCY-T3
    COMMERCIAL
    SINGLE
    625mW
    40V
    300MHz
    -
    -
    35ns
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.