Fairchild/ON Semiconductor PN2222ABU
- Part Number:
- PN2222ABU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2462911-PN2222ABU
- Description:
- TRANS NPN 40V 1A TO-92 CASE
- Datasheet:
- PN2222ABU
Fairchild/ON Semiconductor PN2222ABU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor PN2222ABU.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time6 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Number of Pins3
- Weight179mg
- Transistor Element MaterialSILICON
- Manufacturer Package IdentifierMKT-ZA03DREV3
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC40V
- Max Power Dissipation625mW
- Terminal PositionBOTTOM
- Current Rating500mA
- Frequency300MHz
- Base Part NumberPN2222
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation625mW
- Turn On Delay Time35 ns
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product300MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Turn-Off Delay Time250 ns
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Current - Collector Cutoff (Max)10nA ICBO
- Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
- Collector Emitter Breakdown Voltage40V
- Current - Collector (Ic) (Max)1A
- Transition Frequency300MHz
- Collector Emitter Saturation Voltage1V
- Collector Base Voltage (VCBO)75V
- Emitter Base Voltage (VEBO)6V
- hFE Min40
- Turn Off Time-Max (toff)285ns
- Height5.33mm
- Length5.2mm
- Width4.19mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeContains Lead
PN2222ABU Description
PN2222ABU is a kind of NPN bipolar transistor designed for small signal general purpose and switching applications. It is one of the most widely used semiconductor devices in the integrated circuits. Moreover, it can also be used as a medium power amplifier and switching requiring collector currents up to 500 mA.
PN2222ABU Features
Small size
Light weight
High reliability
Low input impedance
PN2222ABU Applications
Radio and television
Household appliances
Electronic instruments
Automatic control devices
PN2222ABU is a kind of NPN bipolar transistor designed for small signal general purpose and switching applications. It is one of the most widely used semiconductor devices in the integrated circuits. Moreover, it can also be used as a medium power amplifier and switching requiring collector currents up to 500 mA.
PN2222ABU Features
Small size
Light weight
High reliability
Low input impedance
PN2222ABU Applications
Radio and television
Household appliances
Electronic instruments
Automatic control devices
PN2222ABU More Descriptions
Transistor General Purpose BJT NPN 40 Volt 1 Amp 3-Pin TO-92 Bulk
Bipolar Transistors - BJT NPN Transistor General Purpose
PN2222 Series NPN 625 mW 40 V 1A Through Hole General Purpose Transistor-TO-92-3
Amplifier, NPN GP, BJT, 40V, 1A, TO92, 3-pin, 500mA, -55 to 150C, PN2222A | ON Semiconductor PN2222ABU
On Semi PN2222ABU TO92 NPN Transistor
40V 625mW 1A 100@150mA10V 300MHz 1V@500mA50mA NPN -55¡Í~ 150¡Í@(Tj) TO-92-3L Bipolar Transistors - BJT ROHS
NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA.Sourced from Process 19.
TRANSISTOR, BIPOL, NPN, 40V, TO-226AA-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 625mW; DC Collector Current: 1A; DC Current Gain hFE: 35hFE; Tr
Transistor, Npn, 40V, 0.6A, To-226Aa; Transistor Polarity:Npn; Collector Emitter Voltage Max:40V; Continuous Collector Current:600Ma; Power Dissipation:625Mw; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Onsemi PN2222ABU.
Bipolar Transistors - BJT NPN Transistor General Purpose
PN2222 Series NPN 625 mW 40 V 1A Through Hole General Purpose Transistor-TO-92-3
Amplifier, NPN GP, BJT, 40V, 1A, TO92, 3-pin, 500mA, -55 to 150C, PN2222A | ON Semiconductor PN2222ABU
On Semi PN2222ABU TO92 NPN Transistor
40V 625mW 1A 100@150mA10V 300MHz 1V@500mA50mA NPN -55¡Í~ 150¡Í@(Tj) TO-92-3L Bipolar Transistors - BJT ROHS
NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA.Sourced from Process 19.
TRANSISTOR, BIPOL, NPN, 40V, TO-226AA-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 625mW; DC Collector Current: 1A; DC Current Gain hFE: 35hFE; Tr
Transistor, Npn, 40V, 0.6A, To-226Aa; Transistor Polarity:Npn; Collector Emitter Voltage Max:40V; Continuous Collector Current:600Ma; Power Dissipation:625Mw; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Onsemi PN2222ABU.
The three parts on the right have similar specifications to PN2222ABU.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialManufacturer Package IdentifierOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionCurrent RatingFrequencyBase Part NumberNumber of ElementsElement ConfigurationPower DissipationTurn On Delay TimeTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeTurn-Off Delay TimeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCurrent - Collector (Ic) (Max)Transition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinTurn Off Time-Max (toff)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountTerminal FinishHTS CodePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusConfigurationPower - MaxVoltage - Collector Emitter Breakdown (Max)Frequency - TransitionPower Dissipation-Max (Abs)VCEsat-MaxTurn On Time-Max (ton)Collector-Base Capacitance-MaxSupplier Device PackageView Compare
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PN2222ABUACTIVE (Last Updated: 2 days ago)6 WeeksTinThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)3179mgSILICONMKT-ZA03DREV3-55°C~150°C TJBulk2007e3yesActive1 (Unlimited)3EAR99Other Transistors40V625mWBOTTOM500mA300MHzPN22221Single625mW35 nsSWITCHING300MHzNPNNPN250 ns40V600mA100 @ 150mA 10V10nA ICBO1V @ 50mA, 500mA40V1A300MHz1V75V6V40285ns5.33mm5.2mm4.19mmNo SVHCNoROHS3 CompliantContains Lead------------------
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----Through HoleTO-226-3, TO-92-3 (TO-226AA)--SILICON-150°C TJBulk2003e3-Obsolete1 (Unlimited)3EAR99Other Transistors--BOTTOM--PN2222A1---SWITCHING-NPNNPN---100 @ 150mA 10V10nA ICBO1V @ 50mA, 500mA-600mA300MHz----250ns-----ROHS3 Compliant-NOMatte Tin (Sn)8541.21.00.75250403O-PBCY-T3Not QualifiedSINGLE500mW40V300MHz0.625W1 V35ns8pF-
-
----Through HoleTO-226-3, TO-92-3 (TO-226AA)----150°C TJBulk---Obsolete1 (Unlimited)--------PN2222-------NPN---100 @ 150mA 10V10nA ICBO1V @ 50mA, 500mA-600mA----------------------625mW30V300MHz----TO-92-3
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----Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)--SILICON--55°C~150°C TJTape & Box (TB)-e1yesObsolete1 (Unlimited)3----BOTTOM---1---SWITCHING-NPNNPN---100 @ 150mA 10V10nA ICBO1V @ 50mA, 500mA-600mA300MHz----285ns-----ROHS3 Compliant-NOTIN SILVER COPPER-260403O-PBCY-T3COMMERCIALSINGLE625mW40V300MHz--35ns--
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