Fairchild/ON Semiconductor PN2222ATA
- Part Number:
- PN2222ATA
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3585086-PN2222ATA
- Description:
- TRANS NPN 40V 1A TO92
- Datasheet:
- PN2222ATA
Fairchild/ON Semiconductor PN2222ATA technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor PN2222ATA.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time6 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins3
- Weight240mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Box (TB)
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC40V
- Max Power Dissipation625mW
- Terminal PositionBOTTOM
- Current Rating1A
- Frequency300MHz
- Base Part NumberPN2222
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation625mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product300MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Current - Collector Cutoff (Max)10nA ICBO
- Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
- Collector Emitter Breakdown Voltage40V
- Transition Frequency300MHz
- Collector Emitter Saturation Voltage1V
- Max Breakdown Voltage25V
- Collector Base Voltage (VCBO)75V
- Emitter Base Voltage (VEBO)6V
- hFE Min100
- Turn Off Time-Max (toff)285ns
- Height5.33mm
- Length5.2mm
- Width4.19mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
PN2222ATA Overview
DC current gain in this device equals 100 @ 150mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 50mA, 500mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 1A current rating.As a result, the part has a transition frequency of 300MHz.Breakdown input voltage is 25V volts.In extreme cases, the collector current can be as low as 1A volts.
PN2222ATA Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 1A
a transition frequency of 300MHz
PN2222ATA Applications
There are a lot of ON Semiconductor
PN2222ATA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 100 @ 150mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 50mA, 500mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 1A current rating.As a result, the part has a transition frequency of 300MHz.Breakdown input voltage is 25V volts.In extreme cases, the collector current can be as low as 1A volts.
PN2222ATA Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 1A
a transition frequency of 300MHz
PN2222ATA Applications
There are a lot of ON Semiconductor
PN2222ATA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
PN2222ATA More Descriptions
Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
PN Series NPN 625 mW 40 V 1 A Through Hole General Purpose Transistor - TO-92-3
Trans GP BJT NPN 40V 1A 625mW 3-Pin TO-92 Fan-Fold / TRANS NPN 40V 1A TO92
Transistor PN2222A General Purpose NPN 40 Volt 1 Amp TO-92
TO-92-3L Bipolar Transistors - BJT ROHS
NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA.Sourced from Process 19.
TRANSISTOR, NPN, 40V, TO-92; Transistor; Transistor Polarity:N Channel; Collector Emitter Voltage V(br)ceo:40V; Power Dissipation Pd:625mW; DC Collector Current:1A; DC Current Gain hFE:300; Operating Temperature Range:-55°C to 150°C; RF Transistor Case:TO-92; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Continuous Collector Current Ic:1A; Gain Bandwidth ft Typ:300MHz; Package / Case:TO-92; Termination Type:Through Hole; Transistor Case Style:TO-92; Transistor Type:General Purpose
PN Series NPN 625 mW 40 V 1 A Through Hole General Purpose Transistor - TO-92-3
Trans GP BJT NPN 40V 1A 625mW 3-Pin TO-92 Fan-Fold / TRANS NPN 40V 1A TO92
Transistor PN2222A General Purpose NPN 40 Volt 1 Amp TO-92
TO-92-3L Bipolar Transistors - BJT ROHS
NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA.Sourced from Process 19.
TRANSISTOR, NPN, 40V, TO-92; Transistor; Transistor Polarity:N Channel; Collector Emitter Voltage V(br)ceo:40V; Power Dissipation Pd:625mW; DC Collector Current:1A; DC Current Gain hFE:300; Operating Temperature Range:-55°C to 150°C; RF Transistor Case:TO-92; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Continuous Collector Current Ic:1A; Gain Bandwidth ft Typ:300MHz; Package / Case:TO-92; Termination Type:Through Hole; Transistor Case Style:TO-92; Transistor Type:General Purpose
The three parts on the right have similar specifications to PN2222ATA.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionCurrent RatingFrequencyBase Part NumberNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinTurn Off Time-Max (toff)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionSupplier Device PackageSurface MountPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusConfigurationTurn On Time-Max (ton)View Compare
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PN2222ATAACTIVE (Last Updated: 2 days ago)6 WeeksThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)3240mgSILICON-55°C~150°C TJTape & Box (TB)2007e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors40V625mWBOTTOM1A300MHzPN22221Single625mWSWITCHING300MHzNPNNPN40V1A100 @ 150mA 10V10nA ICBO1V @ 50mA, 500mA40V300MHz1V25V75V6V100285ns5.33mm5.2mm4.19mmNo SVHCNoROHS3 CompliantLead Free--------------
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---Through HoleTO-226-3, TO-92-3 (TO-226AA)---150°C TJBulk---Obsolete1 (Unlimited)---------PN2222------NPN--100 @ 150mA 10V10nA ICBO1V @ 50mA, 500mA---------------625mW40V1A300MHz---------
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---Through HoleTO-226-3, TO-92-3 (TO-226AA)---150°C TJBulk---Obsolete1 (Unlimited)---------PN2222------NPN--100 @ 150mA 10V10nA ICBO1V @ 50mA, 500mA---------------625mW30V600mA300MHzTO-92-3--------
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---Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)--SILICON-55°C~150°C TJTape & Box (TB)-e1yesObsolete1 (Unlimited)3-TIN SILVER COPPER---BOTTOM---1--SWITCHING-NPNNPN--100 @ 150mA 10V10nA ICBO1V @ 50mA, 500mA-300MHz-----285ns-----ROHS3 Compliant-625mW40V600mA300MHz-NO260403O-PBCY-T3COMMERCIALSINGLE35ns
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