Fairchild/ON Semiconductor PN2222BU
- Part Number:
- PN2222BU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3585847-PN2222BU
- Description:
- TRANS NPN 30V 0.6A TO-92 CASE
- Datasheet:
- PN2222BU
Fairchild/ON Semiconductor PN2222BU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor PN2222BU.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Supplier Device PackageTO-92-3
- Operating Temperature150°C TJ
- PackagingBulk
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Power - Max625mW
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Current - Collector Cutoff (Max)10nA ICBO
- Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max)30V
- Current - Collector (Ic) (Max)600mA
- Frequency - Transition300MHz
- RoHS StatusROHS3 Compliant
PN2222BU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 50mA, 500mA.This product comes in a TO-92-3 device package from the supplier.Device displays Collector Emitter Breakdown (30V maximal voltage).
PN2222BU Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the supplier device package of TO-92-3
PN2222BU Applications
There are a lot of Rochester Electronics, LLC
PN2222BU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 50mA, 500mA.This product comes in a TO-92-3 device package from the supplier.Device displays Collector Emitter Breakdown (30V maximal voltage).
PN2222BU Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the supplier device package of TO-92-3
PN2222BU Applications
There are a lot of Rochester Electronics, LLC
PN2222BU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
PN2222BU More Descriptions
Bipolar Transistors - BJT NPN Transistor General Purpose
Trans GP BJT NPN 30V 0.6A 3-Pin TO-92 Bulk
Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:30V; Transition Frequency Typ, ft:300MHz; Power Dissipation, Pd:625mW; DC Collector Current:600mA; DC Current Gain Max (hfe):100; No. of Pins:3 ;RoHS Compliant: Yes
Trans GP BJT NPN 30V 0.6A 3-Pin TO-92 Bulk
Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:30V; Transition Frequency Typ, ft:300MHz; Power Dissipation, Pd:625mW; DC Collector Current:600mA; DC Current Gain Max (hfe):100; No. of Pins:3 ;RoHS Compliant: Yes
The three parts on the right have similar specifications to PN2222BU.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Power - MaxTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionRoHS StatusBase Part NumberSurface MountTransistor Element MaterialPublishedJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationTransistor ApplicationPolarity/Channel TypeTransition FrequencyPower Dissipation-Max (Abs)VCEsat-MaxTurn Off Time-Max (toff)Turn On Time-Max (ton)Collector-Base Capacitance-MaxPbfree CodeView Compare
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PN2222BUThrough HoleTO-226-3, TO-92-3 (TO-226AA)TO-92-3150°C TJBulkObsolete1 (Unlimited)625mWNPN100 @ 150mA 10V10nA ICBO1V @ 50mA, 500mA30V600mA300MHzROHS3 Compliant----------------------------
-
Through HoleTO-226-3, TO-92-3 (TO-226AA)-150°C TJBulkObsolete1 (Unlimited)625mWNPN100 @ 150mA 10V10nA ICBO1V @ 50mA, 500mA40V1A300MHz-PN2222--------------------------
-
Through HoleTO-226-3, TO-92-3 (TO-226AA)-150°C TJBulkObsolete1 (Unlimited)500mWNPN100 @ 150mA 10V10nA ICBO1V @ 50mA, 500mA40V600mA300MHzROHS3 CompliantPN2222ANOSILICON2003e33EAR99Matte Tin (Sn)8541.21.00.75Other TransistorsBOTTOM250403O-PBCY-T3Not Qualified1SINGLESWITCHINGNPN300MHz0.625W1 V250ns35ns8pF-
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)--55°C~150°C TJTape & Box (TB)Obsolete1 (Unlimited)625mWNPN100 @ 150mA 10V10nA ICBO1V @ 50mA, 500mA40V600mA300MHzROHS3 Compliant-NOSILICON-e13-TIN SILVER COPPER--BOTTOM260403O-PBCY-T3COMMERCIAL1SINGLESWITCHINGNPN300MHz--285ns35ns-yes
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