Nexperia USA Inc. PMMT591A,215
- Part Number:
- PMMT591A,215
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2845392-PMMT591A,215
- Description:
- TRANS PNP 40V 1A SOT23
- Datasheet:
- PMMT591A,215
Nexperia USA Inc. PMMT591A,215 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PMMT591A,215.
- Factory Lead Time4 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2009
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Power Dissipation250mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Frequency150MHz
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberPMMT591A
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation250mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product150MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 100mA 5V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic500mV @ 100mA, 1A
- Collector Emitter Breakdown Voltage40V
- Transition Frequency150MHz
- Max Breakdown Voltage40V
- Collector Base Voltage (VCBO)40V
- Emitter Base Voltage (VEBO)5V
- Height6.35mm
- Length6.35mm
- Width6.35mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
PMMT591A,215 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 300 @ 100mA 5V.When VCE saturation is 500mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 150MHz.This device can take an input voltage of 40V volts before it breaks down.A maximum collector current of 1A volts can be achieved.
PMMT591A,215 Features
the DC current gain for this device is 300 @ 100mA 5V
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
PMMT591A,215 Applications
There are a lot of Nexperia USA Inc.
PMMT591A,215 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 300 @ 100mA 5V.When VCE saturation is 500mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 150MHz.This device can take an input voltage of 40V volts before it breaks down.A maximum collector current of 1A volts can be achieved.
PMMT591A,215 Features
the DC current gain for this device is 300 @ 100mA 5V
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
PMMT591A,215 Applications
There are a lot of Nexperia USA Inc.
PMMT591A,215 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
PMMT591A,215 More Descriptions
PMMT591A Series 40V 1A 250 mW PNP Surface Mount Small Signal Transistor - SOT-23
Trans GP BJT PNP 40V 1A Automotive 3-Pin TO-236AB T/R
Bipolar Transistor; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency Typ, ft:150MHz; Power Dissipation Pd:250mW; DC Collector Current:-1A; DC Current Gain Max (hfe):300 ;RoHS Compliant: Yes
TRANSISTOR, PNP, SOT-23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: -; Power Dissipation Pd: 250mW; DC Collector Current: 1A; DC Current Gain hFE: 300hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): 350V; Continuous Collector Current Ic Max: 1A; Current Ic @ Vce Sat: 500A; Current Ic Continuous a Max: 1A; Current Ic hFE: 1mA; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 150MHz; Gain Bandwidth ft Typ: 150MHz; Hfe Min: 160; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Power Dissipation Ptot Max: 250mW; Voltage Vcbo: 40V
Trans GP BJT PNP 40V 1A Automotive 3-Pin TO-236AB T/R
Bipolar Transistor; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency Typ, ft:150MHz; Power Dissipation Pd:250mW; DC Collector Current:-1A; DC Current Gain Max (hfe):300 ;RoHS Compliant: Yes
TRANSISTOR, PNP, SOT-23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: -; Power Dissipation Pd: 250mW; DC Collector Current: 1A; DC Current Gain hFE: 300hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): 350V; Continuous Collector Current Ic Max: 1A; Current Ic @ Vce Sat: 500A; Current Ic Continuous a Max: 1A; Current Ic hFE: 1mA; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 150MHz; Gain Bandwidth ft Typ: 150MHz; Hfe Min: 160; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Power Dissipation Ptot Max: 250mW; Voltage Vcbo: 40V
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