ON Semiconductor NTHD5905T1
- Part Number:
- NTHD5905T1
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3585940-NTHD5905T1
- Description:
- MOSFET 2P-CH 8V 3A CHIPFET
- Datasheet:
- NTHD5905T1
ON Semiconductor NTHD5905T1 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTHD5905T1.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SMD, Flat Lead
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2003
- JESD-609 Codee0
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- SubcategoryOther Transistors
- Voltage - Rated DC-8V
- Max Power Dissipation1.1W
- Terminal FormC BEND
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Current Rating-3A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count8
- Qualification StatusNot Qualified
- Number of Elements2
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Operating ModeENHANCEMENT MODE
- FET Type2 P-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs90m Ω @ 3A, 4.5V
- Vgs(th) (Max) @ Id450mV @ 250μA
- Gate Charge (Qg) (Max) @ Vgs9nC @ 4.5V
- Rise Time45ns
- Drain to Source Voltage (Vdss)8V
- Continuous Drain Current (ID)3A
- Drain Current-Max (Abs) (ID)3A
- Drain-source On Resistance-Max0.09Ohm
- DS Breakdown Voltage-Min8V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
NTHD5905T1 Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet NTHD5905T1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NTHD5905T1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet NTHD5905T1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NTHD5905T1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
NTHD5905T1 More Descriptions
Small Signal Field-Effect Transistor, 3A I(D), 8V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Trans MOSFET P-CH 8V 3A 8-Pin Chip FET T/R
Tape & Reel (TR) Surface Mount 2P-Channel (Dual) SEPARATE 2ELEMENTS WITH BUILT-IN DIODE Mosfet Array 9nC @ 4.5V 3A 1.1W 45ns
Trans MOSFET P-CH 8V 3A 8-Pin Chip FET T/R
Tape & Reel (TR) Surface Mount 2P-Channel (Dual) SEPARATE 2ELEMENTS WITH BUILT-IN DIODE Mosfet Array 9nC @ 4.5V 3A 1.1W 45ns
The three parts on the right have similar specifications to NTHD5905T1.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsConfigurationOperating ModeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Continuous Drain Current (ID)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinFET TechnologyFET FeatureRoHS StatusLead FreeLifecycle StatusPbfree CodeBase Part NumberPower DissipationInput Capacitance (Ciss) (Max) @ VdsFall Time (Typ)Turn-Off Delay TimeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Factory Lead TimeSurface MountWeightResistanceElement ConfigurationTurn On Delay TimeCurrent - Continuous Drain (Id) @ 25°CHeightLengthWidthRadiation HardeningView Compare
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NTHD5905T1Surface MountSurface Mount8-SMD, Flat Lead8SILICON-55°C~150°C TJTape & Reel (TR)2003e0Obsolete1 (Unlimited)8EAR99Tin/Lead (Sn/Pb)Other Transistors-8V1.1WC BENDNOT SPECIFIEDnot_compliant-3ANOT SPECIFIED8Not Qualified2SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEENHANCEMENT MODE2 P-Channel (Dual)SWITCHING90m Ω @ 3A, 4.5V450mV @ 250μA9nC @ 4.5V45ns8V3A3A0.09Ohm8VMETAL-OXIDE SEMICONDUCTORLogic Level GateNon-RoHS CompliantContains Lead----------------------
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Surface MountSurface Mount8-SMD, Flat Lead8SILICON-55°C~150°C TJTape & Reel (TR)2005e0Obsolete1 (Unlimited)8--Other Transistors-8V1.1WC BEND240not_compliant-3.4A308Not Qualified2SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEENHANCEMENT MODE2 P-Channel (Dual)SWITCHING58m Ω @ 3.4A, 4.5V1.5V @ 250μA16nC @ 2.5V20ns-3.4A---METAL-OXIDE SEMICONDUCTORLogic Level GateNon-RoHS CompliantContains LeadOBSOLETE (Last Updated: 2 days ago)noNTHD2102P1.1W715pF @ 6.4V20 ns20 ns8V-8V4.6A-----------
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Surface MountSurface Mount8-SMD, Flat Lead8SILICON-55°C~150°C TJTape & Reel (TR)2003e0Obsolete1 (Unlimited)8EAR99Tin/Lead (Sn/Pb)FET General Purpose Power30V1.1WC BEND-not_compliant2.9A-8Not Qualified2SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEENHANCEMENT MODE2 N-Channel (Dual)SWITCHING85m Ω @ 2.9A, 10V1V @ 250μA7.5 nC @ 10V12ns-2.9A---METAL-OXIDE SEMICONDUCTORLogic Level GateNon-RoHS CompliantContains Lead---------------------
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-Surface Mount8-SMD, Flat Lead8SILICON-55°C~150°C TJTape & Reel (TR)2005e3Active1 (Unlimited)8EAR99Tin (Sn)FET General Purpose Power30V640mWC BEND260-2.9A408-2-ENHANCEMENT MODE2 N-Channel (Dual)SWITCHING85m Ω @ 2.9A, 10V3V @ 250μA7nC @ 10V5.4ns-3.9A---METAL-OXIDE SEMICONDUCTORLogic Level GateROHS3 CompliantLead FreeACTIVE (Last Updated: 10 hours ago)yesNTHD4502N1.13W140pF @ 15V5.4 ns14.9 ns20V-20V-2 WeeksYES4.535924g80MOhmDual7.8 ns2.2A1.1mm3.1mm1.7mmNo
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