NTHD2102PT1

ON Semiconductor NTHD2102PT1

Part Number:
NTHD2102PT1
Manufacturer:
ON Semiconductor
Ventron No:
2848396-NTHD2102PT1
Description:
MOSFET 2P-CH 8V 3.4A CHIPFET
ECAD Model:
Datasheet:
NTHD2102PT1

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Specifications
ON Semiconductor NTHD2102PT1 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTHD2102PT1.
  • Lifecycle Status
    OBSOLETE (Last Updated: 2 days ago)
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SMD, Flat Lead
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2005
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -8V
  • Max Power Dissipation
    1.1W
  • Terminal Form
    C BEND
  • Peak Reflow Temperature (Cel)
    240
  • Reach Compliance Code
    not_compliant
  • Current Rating
    -3.4A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    NTHD2102P
  • Pin Count
    8
  • Qualification Status
    Not Qualified
  • Number of Elements
    2
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1.1W
  • FET Type
    2 P-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    58m Ω @ 3.4A, 4.5V
  • Vgs(th) (Max) @ Id
    1.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    715pF @ 6.4V
  • Gate Charge (Qg) (Max) @ Vgs
    16nC @ 2.5V
  • Rise Time
    20ns
  • Fall Time (Typ)
    20 ns
  • Turn-Off Delay Time
    20 ns
  • Continuous Drain Current (ID)
    3.4A
  • Gate to Source Voltage (Vgs)
    8V
  • Drain to Source Breakdown Voltage
    -8V
  • Pulsed Drain Current-Max (IDM)
    4.6A
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
NTHD2102PT1 Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet NTHD2102PT1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NTHD2102PT1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
NTHD2102PT1 More Descriptions
Power MOSFET 8V 4.6A 62 mOhm Dual P-Channel ChipFET
MOSFETs- Power and Small Signal -8V -4.6A P-Channel No-Cancel/No-Return
Power Field-Effect Transistor, 3.4A I(D), 8V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
French Electronic Distributor since 1988
Tape & Reel (TR) Surface Mount 2P-Channel (Dual) SEPARATE 2ELEMENTS WITH BUILT-IN DIODE Mosfet Array 16nC @ 2.5V 3.4A 1.1W 20ns
Product Comparison
The three parts on the right have similar specifications to NTHD2102PT1.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    Power Dissipation
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    FET Technology
    FET Feature
    RoHS Status
    Lead Free
    ECCN Code
    Terminal Finish
    Drain-source On Resistance-Max
    Feedback Cap-Max (Crss)
    Factory Lead Time
    Surface Mount
    Weight
    Resistance
    Element Configuration
    Turn On Delay Time
    Current - Continuous Drain (Id) @ 25°C
    Height
    Length
    Width
    Radiation Hardening
    View Compare
  • NTHD2102PT1
    NTHD2102PT1
    OBSOLETE (Last Updated: 2 days ago)
    Surface Mount
    Surface Mount
    8-SMD, Flat Lead
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2005
    e0
    no
    Obsolete
    1 (Unlimited)
    8
    Other Transistors
    -8V
    1.1W
    C BEND
    240
    not_compliant
    -3.4A
    30
    NTHD2102P
    8
    Not Qualified
    2
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    1.1W
    2 P-Channel (Dual)
    SWITCHING
    58m Ω @ 3.4A, 4.5V
    1.5V @ 250μA
    715pF @ 6.4V
    16nC @ 2.5V
    20ns
    20 ns
    20 ns
    3.4A
    8V
    -8V
    4.6A
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NTHD4401PT3
    -
    Surface Mount
    Surface Mount
    8-SMD, Flat Lead
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2005
    e3
    yes
    Obsolete
    1 (Unlimited)
    8
    -
    20V
    1.1W
    C BEND
    -
    -
    -3A
    -
    NTHD4401P
    8
    -
    2
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    1.1W
    2 P-Channel (Dual)
    SWITCHING
    155m Ω @ 2.1A, 4.5V
    1.2V @ 250μA
    300pF @ 10V
    6nC @ 4.5V
    13ns
    13 ns
    33 ns
    2.1A
    12V
    -20V
    -
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    Non-RoHS Compliant
    Contains Lead
    EAR99
    Tin (Sn)
    0.155Ohm
    50 pF
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NTHD5902T1
    -
    Surface Mount
    Surface Mount
    8-SMD, Flat Lead
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2003
    e0
    -
    Obsolete
    1 (Unlimited)
    8
    FET General Purpose Power
    30V
    1.1W
    C BEND
    -
    not_compliant
    2.9A
    -
    -
    8
    Not Qualified
    2
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    -
    2 N-Channel (Dual)
    SWITCHING
    85m Ω @ 2.9A, 10V
    1V @ 250μA
    -
    7.5 nC @ 10V
    12ns
    -
    -
    2.9A
    -
    -
    -
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    Non-RoHS Compliant
    Contains Lead
    EAR99
    Tin/Lead (Sn/Pb)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NTHD4502NT1G
    ACTIVE (Last Updated: 10 hours ago)
    -
    Surface Mount
    8-SMD, Flat Lead
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2005
    e3
    yes
    Active
    1 (Unlimited)
    8
    FET General Purpose Power
    30V
    640mW
    C BEND
    260
    -
    2.9A
    40
    NTHD4502N
    8
    -
    2
    -
    ENHANCEMENT MODE
    1.13W
    2 N-Channel (Dual)
    SWITCHING
    85m Ω @ 2.9A, 10V
    3V @ 250μA
    140pF @ 15V
    7nC @ 10V
    5.4ns
    5.4 ns
    14.9 ns
    3.9A
    20V
    -20V
    -
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    ROHS3 Compliant
    Lead Free
    EAR99
    Tin (Sn)
    -
    -
    2 Weeks
    YES
    4.535924g
    80MOhm
    Dual
    7.8 ns
    2.2A
    1.1mm
    3.1mm
    1.7mm
    No
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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