ON Semiconductor NTHD2102PT1
- Part Number:
- NTHD2102PT1
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2848396-NTHD2102PT1
- Description:
- MOSFET 2P-CH 8V 3.4A CHIPFET
- Datasheet:
- NTHD2102PT1
ON Semiconductor NTHD2102PT1 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTHD2102PT1.
- Lifecycle StatusOBSOLETE (Last Updated: 2 days ago)
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SMD, Flat Lead
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- SubcategoryOther Transistors
- Voltage - Rated DC-8V
- Max Power Dissipation1.1W
- Terminal FormC BEND
- Peak Reflow Temperature (Cel)240
- Reach Compliance Codenot_compliant
- Current Rating-3.4A
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberNTHD2102P
- Pin Count8
- Qualification StatusNot Qualified
- Number of Elements2
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.1W
- FET Type2 P-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs58m Ω @ 3.4A, 4.5V
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds715pF @ 6.4V
- Gate Charge (Qg) (Max) @ Vgs16nC @ 2.5V
- Rise Time20ns
- Fall Time (Typ)20 ns
- Turn-Off Delay Time20 ns
- Continuous Drain Current (ID)3.4A
- Gate to Source Voltage (Vgs)8V
- Drain to Source Breakdown Voltage-8V
- Pulsed Drain Current-Max (IDM)4.6A
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
NTHD2102PT1 Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet NTHD2102PT1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NTHD2102PT1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet NTHD2102PT1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NTHD2102PT1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
NTHD2102PT1 More Descriptions
Power MOSFET 8V 4.6A 62 mOhm Dual P-Channel ChipFET
MOSFETs- Power and Small Signal -8V -4.6A P-Channel No-Cancel/No-Return
Power Field-Effect Transistor, 3.4A I(D), 8V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
French Electronic Distributor since 1988
Tape & Reel (TR) Surface Mount 2P-Channel (Dual) SEPARATE 2ELEMENTS WITH BUILT-IN DIODE Mosfet Array 16nC @ 2.5V 3.4A 1.1W 20ns
MOSFETs- Power and Small Signal -8V -4.6A P-Channel No-Cancel/No-Return
Power Field-Effect Transistor, 3.4A I(D), 8V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
French Electronic Distributor since 1988
Tape & Reel (TR) Surface Mount 2P-Channel (Dual) SEPARATE 2ELEMENTS WITH BUILT-IN DIODE Mosfet Array 16nC @ 2.5V 3.4A 1.1W 20ns
The three parts on the right have similar specifications to NTHD2102PT1.
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ImagePart NumberManufacturerLifecycle StatusMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsConfigurationOperating ModePower DissipationFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsGate Charge (Qg) (Max) @ VgsRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)FET TechnologyFET FeatureRoHS StatusLead FreeECCN CodeTerminal FinishDrain-source On Resistance-MaxFeedback Cap-Max (Crss)Factory Lead TimeSurface MountWeightResistanceElement ConfigurationTurn On Delay TimeCurrent - Continuous Drain (Id) @ 25°CHeightLengthWidthRadiation HardeningView Compare
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NTHD2102PT1OBSOLETE (Last Updated: 2 days ago)Surface MountSurface Mount8-SMD, Flat Lead8SILICON-55°C~150°C TJTape & Reel (TR)2005e0noObsolete1 (Unlimited)8Other Transistors-8V1.1WC BEND240not_compliant-3.4A30NTHD2102P8Not Qualified2SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEENHANCEMENT MODE1.1W2 P-Channel (Dual)SWITCHING58m Ω @ 3.4A, 4.5V1.5V @ 250μA715pF @ 6.4V16nC @ 2.5V20ns20 ns20 ns3.4A8V-8V4.6AMETAL-OXIDE SEMICONDUCTORLogic Level GateNon-RoHS CompliantContains Lead----------------
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-Surface MountSurface Mount8-SMD, Flat Lead8SILICON-55°C~150°C TJTape & Reel (TR)2005e3yesObsolete1 (Unlimited)8-20V1.1WC BEND---3A-NTHD4401P8-2SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEENHANCEMENT MODE1.1W2 P-Channel (Dual)SWITCHING155m Ω @ 2.1A, 4.5V1.2V @ 250μA300pF @ 10V6nC @ 4.5V13ns13 ns33 ns2.1A12V-20V-METAL-OXIDE SEMICONDUCTORLogic Level GateNon-RoHS CompliantContains LeadEAR99Tin (Sn)0.155Ohm50 pF-----------
-
-Surface MountSurface Mount8-SMD, Flat Lead8SILICON-55°C~150°C TJTape & Reel (TR)2003e0-Obsolete1 (Unlimited)8FET General Purpose Power30V1.1WC BEND-not_compliant2.9A--8Not Qualified2SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEENHANCEMENT MODE-2 N-Channel (Dual)SWITCHING85m Ω @ 2.9A, 10V1V @ 250μA-7.5 nC @ 10V12ns--2.9A---METAL-OXIDE SEMICONDUCTORLogic Level GateNon-RoHS CompliantContains LeadEAR99Tin/Lead (Sn/Pb)-------------
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ACTIVE (Last Updated: 10 hours ago)-Surface Mount8-SMD, Flat Lead8SILICON-55°C~150°C TJTape & Reel (TR)2005e3yesActive1 (Unlimited)8FET General Purpose Power30V640mWC BEND260-2.9A40NTHD4502N8-2-ENHANCEMENT MODE1.13W2 N-Channel (Dual)SWITCHING85m Ω @ 2.9A, 10V3V @ 250μA140pF @ 15V7nC @ 10V5.4ns5.4 ns14.9 ns3.9A20V-20V-METAL-OXIDE SEMICONDUCTORLogic Level GateROHS3 CompliantLead FreeEAR99Tin (Sn)--2 WeeksYES4.535924g80MOhmDual7.8 ns2.2A1.1mm3.1mm1.7mmNo
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