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NTGD4167CT1G

ON Semiconductor NTGD4167CT1G

Part Number:
NTGD4167CT1G
Manufacturer:
ON Semiconductor
Ventron No:
2473834-NTGD4167CT1G
Description:
MOSFET N/P-CH 30V 6-TSOP
ECAD Model:
Datasheet:
NTGD4167CT1G

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Specifications
ON Semiconductor NTGD4167CT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTGD4167CT1G.
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
    4 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-23-6 Thin, TSOT-23-6
  • Surface Mount
    YES
  • Number of Pins
    6
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2007
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Resistance
    90MOhm
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    900mW
  • Terminal Form
    GULL WING
  • Base Part Number
    NTGD4167C
  • Pin Count
    6
  • Number of Elements
    2
  • Element Configuration
    Dual
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1.1W
  • Turn On Delay Time
    8 ns
  • FET Type
    N and P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    90m Ω @ 2.6A, 4.5V
  • Vgs(th) (Max) @ Id
    1.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    295pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    2.6A 1.9A
  • Gate Charge (Qg) (Max) @ Vgs
    5.5nC @ 4.5V
  • Rise Time
    8ns
  • Polarity/Channel Type
    N-CHANNEL AND P-CHANNEL
  • Fall Time (Typ)
    8 ns
  • Turn-Off Delay Time
    22 ns
  • Continuous Drain Current (ID)
    2.6A
  • Threshold Voltage
    900mV
  • Gate to Source Voltage (Vgs)
    12V
  • Drain to Source Breakdown Voltage
    30V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • Height
    1mm
  • Length
    3.1mm
  • Width
    1.7mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
NTGD4167CT1G              Description
 A double complementary rectifier is used to provide positive and negative DC output with the same voltage. In most cases, the negative current is significantly smaller than the positive current requirement, so the relationship between AC voltage and current and DC voltage and current should be the same as the full-wave center of the tap described earlier.
NTGD4167CT1G               Features ? Complementary N?Channel and P?Channel MOSFET ? Small Size (3 x 3 mm) Dual TSOP?6 Package ? Leading Edge Trench Technology for Low On Resistance ? Reduced Gate Charge to Improve Switching Response ? Independently Connected Devices to Provide Design Flexibility ? This is a Pb?Free Device
NTGD4167CT1G          Applications
? DC?DC Conversion Circuits ? Load/Power Switching with Level Shift    



NTGD4167CT1G More Descriptions
NTGD4167CT1G N/P-channel MOSFET Transistor; 2.2 A; 2.9 A; 30 V; 6-Pin TSOP
NTGD4167C: Small Signal MOSFET 30V 2.6A 90 mOhm Dual Complementary TSOP-6
Dual Channel N & P 30 V 90 mOhm 900 mW Surface Mount Power Mosfet - TSOP-6
Trans MOSFET N/P-CH 30V 2.2A 6-Pin TSOP T/R
Complementary Power MOSFET 30V, 2.6A, 90mΩ
MOSFET, N AND P CH, 30V, 2.6A, TSOP-6; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 2.6A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.052ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 900mV; Power Dissipation Pd: 900mW; Transistor Case Style: TSOP; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Small Signal Field-Effect Transistor, 2.6A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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