ON Semiconductor NTGD4161PT1G
- Part Number:
- NTGD4161PT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2474213-NTGD4161PT1G
- Description:
- MOSFET 2P-CH 30V 1.5A 6-TSOP
- Datasheet:
- NTGD4161PT1G
ON Semiconductor NTGD4161PT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTGD4161PT1G.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 day ago)
- Mounting TypeSurface Mount
- Package / CaseSOT-23-6 Thin, TSOT-23-6
- Surface MountYES
- Number of Pins6
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2000
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Max Power Dissipation600mW
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count6
- Qualification StatusNot Qualified
- Number of Elements2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.1W
- FET Type2 P-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs160m Ω @ 2.1A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds281pF @ 15V
- Current - Continuous Drain (Id) @ 25°C1.5A
- Gate Charge (Qg) (Max) @ Vgs7.1nC @ 10V
- Rise Time9.2ns
- Drain to Source Voltage (Vdss)30V
- Fall Time (Typ)9.2 ns
- Turn-Off Delay Time12.5 ns
- Continuous Drain Current (ID)-2.1A
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)1.5A
- Drain to Source Breakdown Voltage-30V
- Pulsed Drain Current-Max (IDM)10A
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
NTGD4161PT1G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet NTGD4161PT1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NTGD4161PT1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet NTGD4161PT1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NTGD4161PT1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
NTGD4161PT1G More Descriptions
Power MOSFET -30V -2.3A 160 mOhm Dual P-Channel TSOP6
Transistor MOSFET Array Dual P-Channel 30V 2.3A 6-Pin TSOP
Tape & Reel (TR) Surface Mount 2P-Channel (Dual) Dual Mosfet Array 1.5A -2.1A 600mW 9.2ns
Power MOSFET -30 V -2.3 A Dual P-Channel TSOP-6
Transistor MOSFET Array Dual P-Channel 30V 2.3A 6-Pin TSOP
Tape & Reel (TR) Surface Mount 2P-Channel (Dual) Dual Mosfet Array 1.5A -2.1A 600mW 9.2ns
Power MOSFET -30 V -2.3 A Dual P-Channel TSOP-6
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