ON Semiconductor NSCT817-25LT1G
- Part Number:
- NSCT817-25LT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3585652-NSCT817-25LT1G
- Description:
- TRANS NPN 45V 0.5A SOT-23
- ECAD Model:
-
- Datasheet:
- NSCT817-25,-40 LT1G
ON Semiconductor NSCT817-25LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSCT817-25LT1G.
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Supplier Device PackageSOT-23-3 (TO-236)
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Power - Max225mW
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 100mA 1V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic700mV @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max)45V
- Current - Collector (Ic) (Max)500mA
- Frequency - Transition100MHz
- RoHS StatusNon-RoHS Compliant
NSCT817-25LT1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 160 @ 100mA 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 700mV @ 50mA, 500mA.This product comes in a SOT-23-3 (TO-236) device package from the supplier.Device displays Collector Emitter Breakdown (45V maximal voltage).
NSCT817-25LT1G Features
the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the supplier device package of SOT-23-3 (TO-236)
NSCT817-25LT1G Applications
There are a lot of Rochester Electronics, LLC
NSCT817-25LT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 160 @ 100mA 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 700mV @ 50mA, 500mA.This product comes in a SOT-23-3 (TO-236) device package from the supplier.Device displays Collector Emitter Breakdown (45V maximal voltage).
NSCT817-25LT1G Features
the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the supplier device package of SOT-23-3 (TO-236)
NSCT817-25LT1G Applications
There are a lot of Rochester Electronics, LLC
NSCT817-25LT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
NSCT817-25LT1G More Descriptions
Tape & Reel (TR) Surface Mount NPN NSCT817 Bipolar (BJT) Transistor 160 @ 100mA 1V 500mA 225mW 100MHz
TRANS NPN 45V 500MA SOT23-3
XSTR NPN 45V CU WIRE
TRANS NPN 45V 500MA SOT23-3
XSTR NPN 45V CU WIRE
The three parts on the right have similar specifications to NSCT817-25LT1G.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Power - MaxTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionRoHS StatusView Compare
-
NSCT817-25LT1GSurface MountTO-236-3, SC-59, SOT-23-3SOT-23-3 (TO-236)-55°C~150°C TJTape & Reel (TR)Obsolete3 (168 Hours)225mWNPN160 @ 100mA 1V100nA ICBO700mV @ 50mA, 500mA45V500mA100MHzNon-RoHS Compliant- -
Surface MountTO-236-3, SC-59, SOT-23-3SOT-23-3 (TO-236)-55°C~150°C TJTape & Reel (TR)Obsolete3 (168 Hours)225mWNPN160 @ 100mA 1V100nA ICBO700mV @ 50mA, 500mA45V500mA100MHzNon-RoHS Compliant
-
Surface MountTO-236-3, SC-59, SOT-23-3SOT-23-3 (TO-236)-55°C~150°C TJTape & Reel (TR)Obsolete3 (168 Hours)225mWPNP100 @ 150mA 10V10nA ICBO1.6V @ 50mA, 500mA60V600mA200MHzNon-RoHS Compliant
-
Surface MountTO-236-3, SC-59, SOT-23-3SOT-23-3 (TO-236)-55°C~150°C TJTape & Reel (TR)Obsolete3 (168 Hours)225mWNPN250 @ 100mA 1V100nA ICBO700mV @ 50mA, 500mA45V100mA100MHzNon-RoHS Compliant
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