ON Semiconductor NSBC124EPDXV6T1G
- Part Number:
- NSBC124EPDXV6T1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2844576-NSBC124EPDXV6T1G
- Description:
- TRANS PREBIAS NPN/PNP SOT563
- Datasheet:
- NSBC124EPDXV6T1G
ON Semiconductor NSBC124EPDXV6T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSBC124EPDXV6T1G.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time2 Weeks
- Mounting TypeSurface Mount
- Package / CaseSOT-563, SOT-666
- Surface MountYES
- Number of Pins6
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureBUILT IN BIAS RESISTANCE RATIO IS 1
- SubcategoryBIP General Purpose Small Signal
- Voltage - Rated DC50V
- Max Power Dissipation500mW
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Current Rating100mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberNSBC1*
- Pin Count6
- Number of Elements2
- PolarityNPN, PNP
- Element ConfigurationDual
- Power Dissipation357mW
- Transistor ApplicationSWITCHING
- Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 5mA 10V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 300μA, 10mA
- Collector Emitter Breakdown Voltage50V
- Max Breakdown Voltage50V
- hFE Min60
- Resistor - Base (R1)22k Ω
- Continuous Collector Current100mA
- Resistor - Emitter Base (R2)22k Ω
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NSBC124EPDXV6T1G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NSBC124EPDXV6T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NSBC124EPDXV6T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NSBC124EPDXV6T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NSBC124EPDXV6T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
NSBC124EPDXV6T1G More Descriptions
Trans Digital BJT NPN/PNP 50V 100mA 500mW 6-Pin SOT-563 T/R
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
Complementary Bipolar Digital Transistor (BRT)
BRT TRANSISTOR, 50V, 22K/22KOHM, SOT-563; BRT TRANSISTOR, 50V, 22K/22KOHM, SOT-563; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:22kohm; Base-Emitter Resistor R2:22kohm; Resistor Ratio, R1 / R2:1
Brt Transistor, 50V, 22K/22Kohm, Sot-563, Full Reel; Transistor Polarity:Npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; No. Of Pins:6 Pin Rohs Compliant: Yes |Onsemi NSBC124EPDXV6T1G
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
Complementary Bipolar Digital Transistor (BRT)
BRT TRANSISTOR, 50V, 22K/22KOHM, SOT-563; BRT TRANSISTOR, 50V, 22K/22KOHM, SOT-563; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:22kohm; Base-Emitter Resistor R2:22kohm; Resistor Ratio, R1 / R2:1
Brt Transistor, 50V, 22K/22Kohm, Sot-563, Full Reel; Transistor Polarity:Npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; No. Of Pins:6 Pin Rohs Compliant: Yes |Onsemi NSBC124EPDXV6T1G
The three parts on the right have similar specifications to NSBC124EPDXV6T1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageMax Breakdown VoltagehFE MinResistor - Base (R1)Continuous Collector CurrentResistor - Emitter Base (R2)Radiation HardeningRoHS StatusLead FreeMountTransistor Element MaterialReach Compliance CodeJESD-30 CodeQualification StatusConfigurationPolarity/Channel TypeREACH SVHCView Compare
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NSBC124EPDXV6T1GACTIVE (Last Updated: 4 days ago)2 WeeksSurface MountSOT-563, SOT-666YES6Tape & Reel (TR)2008e3yesActive1 (Unlimited)6EAR99Tin (Sn)150°C-55°CBUILT IN BIAS RESISTANCE RATIO IS 1BIP General Purpose Small Signal50V500mWFLAT260100mA40NSBC1*62NPN, PNPDual357mWSWITCHING1 NPN, 1 PNP - Pre-Biased (Dual)50V100mA60 @ 5mA 10V500nA250mV @ 300μA, 10mA50V50V6022k Ω100mA22k ΩNoROHS3 CompliantLead Free---------
-
--Surface MountSOT-563, SOT-666--Tape & Reel (TR)2005e3-Obsolete1 (Unlimited)6EAR99Tin (Sn)--BUILT IN BIAS RESISTOR RATIO IS 1BIP General Purpose Small Signal50V500mWFLAT260100mA40NSBC1*62---SWITCHING2 NPN - Pre-Biased (Dual)250mV100mA3 @ 5mA 10V500nA250mV @ 5mA, 10mA50V--1k Ω-1k Ω-Non-RoHS CompliantContains LeadSurface MountSILICONunknownR-PDSO-F6Not QualifiedSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTORNPN-
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ACTIVE (Last Updated: 2 days ago)8 WeeksSurface MountSOT-963YES6Tape & Reel (TR)2008e3yesActive1 (Unlimited)6EAR99Tin (Sn)150°C-55°CBUILT IN BIAS RESISTOR RATIO 0.047BIP General Purpose Small Signal-339mWFLAT---NSBC1*62NPN, PNPDual-SWITCHING2 NPN - Pre-Biased (Dual)50V100mA80 @ 5mA 10V500nA250mV @ 300μA, 10mA50V-802.2k Ω-47k ΩNoROHS3 CompliantLead Free--------
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ACTIVE (Last Updated: 1 week ago)8 WeeksSurface MountSOT-963YES6Tape & Reel (TR)2008e3yesActive1 (Unlimited)6EAR99Tin (Sn)150°C-55°CBUILT IN BIAS RESISTOR RATIOBIP General Purpose Small Signal-339mWFLAT----62NPN, PNPDual231mWSWITCHING1 NPN, 1 PNP - Pre-Biased (Dual)50V100mA160 @ 5mA 10V500nA250mV @ 1mA, 10mA50V-1602.2k Ω100mA-NoROHS3 CompliantLead Free-------No SVHC
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