NSBC114YDXV6T1G

ON Semiconductor NSBC114YDXV6T1G

Part Number:
NSBC114YDXV6T1G
Manufacturer:
ON Semiconductor
Ventron No:
2462000-NSBC114YDXV6T1G
Description:
TRANS 2NPN PREBIAS 0.5W SOT563
ECAD Model:
Datasheet:
NSBC114YDXV6T1G

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Specifications
ON Semiconductor NSBC114YDXV6T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSBC114YDXV6T1G.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    2 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-563, SOT-666
  • Surface Mount
    YES
  • Number of Pins
    6
  • Packaging
    Tape & Reel (TR)
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Additional Feature
    BUILT IN BIAS RESISTOR RATIO 4.7
  • Subcategory
    BIP General Purpose Small Signal
  • Voltage - Rated DC
    50V
  • Max Power Dissipation
    500mW
  • Terminal Form
    FLAT
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    100mA
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    NSBC1*
  • Pin Count
    6
  • Number of Elements
    2
  • Polarity
    NPN
  • Element Configuration
    Dual
  • Power Dissipation
    357mW
  • Transistor Application
    SWITCHING
  • Transistor Type
    2 NPN - Pre-Biased (Dual)
  • Collector Emitter Voltage (VCEO)
    50V
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 5mA 10V
  • Current - Collector Cutoff (Max)
    500nA
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 300μA, 10mA
  • Collector Emitter Breakdown Voltage
    50V
  • Max Breakdown Voltage
    50V
  • hFE Min
    80
  • Resistor - Base (R1)
    10k Ω
  • Continuous Collector Current
    100mA
  • Resistor - Emitter Base (R2)
    47k Ω
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
NSBC114YDXV6T1G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NSBC114YDXV6T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NSBC114YDXV6T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
NSBC114YDXV6T1G More Descriptions
Trans Digital BJT NPN 50V 100mA 500mW Automotive 6-Pin SOT-563 T/R
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
Dual NPN Bipolar Digital Transistor (BRT)
Trans Digital BJT NPN 50V 100mA 6-Pin SOT-563 T/R - Product that comes on tape, but is not reeled (A
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Transistor, AEC-Q101, DUAL NPN, 50V, SOT-563; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous
Product Comparison
The three parts on the right have similar specifications to NSBC114YDXV6T1G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Max Operating Temperature
    Min Operating Temperature
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Number of Elements
    Polarity
    Element Configuration
    Power Dissipation
    Transistor Application
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Max Breakdown Voltage
    hFE Min
    Resistor - Base (R1)
    Continuous Collector Current
    Resistor - Emitter Base (R2)
    Radiation Hardening
    RoHS Status
    Lead Free
    Mount
    Transistor Element Material
    Terminal Finish
    Reach Compliance Code
    JESD-30 Code
    Qualification Status
    Configuration
    Polarity/Channel Type
    REACH SVHC
    View Compare
  • NSBC114YDXV6T1G
    NSBC114YDXV6T1G
    ACTIVE (Last Updated: 4 days ago)
    2 Weeks
    Tin
    Surface Mount
    SOT-563, SOT-666
    YES
    6
    Tape & Reel (TR)
    2006
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    150°C
    -55°C
    BUILT IN BIAS RESISTOR RATIO 4.7
    BIP General Purpose Small Signal
    50V
    500mW
    FLAT
    260
    100mA
    40
    NSBC1*
    6
    2
    NPN
    Dual
    357mW
    SWITCHING
    2 NPN - Pre-Biased (Dual)
    50V
    100mA
    80 @ 5mA 10V
    500nA
    250mV @ 300μA, 10mA
    50V
    50V
    80
    10k Ω
    100mA
    47k Ω
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NSBC113EDXV6T5
    -
    -
    -
    Surface Mount
    SOT-563, SOT-666
    -
    -
    Tape & Reel (TR)
    2005
    e3
    -
    Obsolete
    1 (Unlimited)
    6
    EAR99
    -
    -
    BUILT IN BIAS RESISTOR RATIO IS 1
    BIP General Purpose Small Signal
    50V
    500mW
    FLAT
    260
    100mA
    40
    NSBC1*
    6
    2
    -
    -
    -
    SWITCHING
    2 NPN - Pre-Biased (Dual)
    250mV
    100mA
    3 @ 5mA 10V
    500nA
    250mV @ 5mA, 10mA
    50V
    -
    -
    1k Ω
    -
    1k Ω
    -
    Non-RoHS Compliant
    Contains Lead
    Surface Mount
    SILICON
    Tin (Sn)
    unknown
    R-PDSO-F6
    Not Qualified
    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
    NPN
    -
  • NSBC123TDP6T5G
    ACTIVE (Last Updated: 2 days ago)
    8 Weeks
    -
    Surface Mount
    SOT-963
    YES
    6
    Tape & Reel (TR)
    2010
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    150°C
    -55°C
    BUILT IN BIAS RESISTOR
    BIP General Purpose Small Signal
    -
    339mW
    FLAT
    NOT SPECIFIED
    -
    NOT SPECIFIED
    NSBC1*
    6
    2
    NPN
    Dual
    -
    SWITCHING
    2 NPN - Pre-Biased (Dual)
    50V
    100mA
    160 @ 5mA 10V
    500nA
    250mV @ 1mA, 10mA
    50V
    -
    160
    2.2k Ω
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    Tin (Sn)
    -
    -
    Not Qualified
    -
    -
    -
  • NSBC123TPDP6T5G
    ACTIVE (Last Updated: 1 week ago)
    8 Weeks
    -
    Surface Mount
    SOT-963
    YES
    6
    Tape & Reel (TR)
    2008
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    150°C
    -55°C
    BUILT IN BIAS RESISTOR RATIO
    BIP General Purpose Small Signal
    -
    339mW
    FLAT
    -
    -
    -
    -
    6
    2
    NPN, PNP
    Dual
    231mW
    SWITCHING
    1 NPN, 1 PNP - Pre-Biased (Dual)
    50V
    100mA
    160 @ 5mA 10V
    500nA
    250mV @ 1mA, 10mA
    50V
    -
    160
    2.2k Ω
    100mA
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    Tin (Sn)
    -
    -
    -
    -
    -
    No SVHC
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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