ON Semiconductor NSBC114EPDXV6T5G
- Part Number:
- NSBC114EPDXV6T5G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2844581-NSBC114EPDXV6T5G
- Description:
- TRANS PREBIAS NPN/PNP SOT563
- Datasheet:
- NSBC114EPDXV6T5G
ON Semiconductor NSBC114EPDXV6T5G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSBC114EPDXV6T5G.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time17 Weeks
- Mounting TypeSurface Mount
- Package / CaseSOT-563, SOT-666
- Surface MountYES
- Number of Pins6
- PackagingTape & Reel (TR)
- Published2010
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureBUILT IN BIAS RESISTOR RATIO IS 1
- SubcategoryBIP General Purpose Small Signal
- Voltage - Rated DC50V
- Max Power Dissipation500mW
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Current Rating100mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberNSBC1*
- Pin Count6
- Qualification StatusNot Qualified
- Number of Elements2
- PolarityNPN, PNP
- Element ConfigurationDual
- Power Dissipation357mW
- Transistor ApplicationSWITCHING
- Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce35 @ 5mA 10V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 300μA, 10mA
- Collector Emitter Breakdown Voltage50V
- hFE Min35
- Resistor - Base (R1)10k Ω
- Continuous Collector Current100mA
- Resistor - Emitter Base (R2)10k Ω
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NSBC114EPDXV6T5G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NSBC114EPDXV6T5G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NSBC114EPDXV6T5G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NSBC114EPDXV6T5G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NSBC114EPDXV6T5G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
NSBC114EPDXV6T5G More Descriptions
Trans Digital BJT NPN/PNP 50V 100mA 500mW Automotive 6-Pin SOT-563 T/R
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
Complementary Bipolar Digital Transistor (BRT)
Brt Transistor, 50V, 10K/10Kohm, Sot-963; Transistor Polarity:Npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:- Rohs Compliant: Yes |Onsemi NSBC114EPDXV6T5G
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
Complementary Bipolar Digital Transistor (BRT)
Brt Transistor, 50V, 10K/10Kohm, Sot-963; Transistor Polarity:Npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:- Rohs Compliant: Yes |Onsemi NSBC114EPDXV6T5G
The three parts on the right have similar specifications to NSBC114EPDXV6T5G.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltagehFE MinResistor - Base (R1)Continuous Collector CurrentResistor - Emitter Base (R2)RoHS StatusLead FreeRadiation HardeningTransistor Element MaterialReach Compliance CodeJESD-30 CodeConfigurationPower - MaxPolarity/Channel TypeVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)View Compare
-
NSBC114EPDXV6T5GACTIVE (Last Updated: 2 days ago)17 WeeksSurface MountSOT-563, SOT-666YES6Tape & Reel (TR)2010e3yesActive1 (Unlimited)6EAR99Tin (Sn)150°C-55°CBUILT IN BIAS RESISTOR RATIO IS 1BIP General Purpose Small Signal50V500mWFLAT260100mA40NSBC1*6Not Qualified2NPN, PNPDual357mWSWITCHING1 NPN, 1 PNP - Pre-Biased (Dual)50V100mA35 @ 5mA 10V500nA250mV @ 300μA, 10mA50V3510k Ω100mA10k ΩROHS3 CompliantLead Free----------
-
ACTIVE (Last Updated: 5 days ago)8 WeeksSurface MountSOT-963YES6Tape & Reel (TR)2010e3yesActive1 (Unlimited)6EAR99Tin (Sn)150°C-55°CBUILT IN BIAS RESISTORBIP General Purpose Small Signals-339mWFLAT---NSBC1*6-2NPNDual-SWITCHING2 NPN - Pre-Biased (Dual)50V100mA160 @ 5mA 10V500nA250mV @ 5mA, 10mA50V160100k Ω--ROHS3 CompliantLead FreeNo--------
-
--Surface MountSOT-563, SOT-666YES-Tape & Reel (TR)-e3yesObsolete1 (Unlimited)6-MATTE TIN--BUILT IN BIAS RESISTOR RATIO IS 4.7---FLAT260-40-6COMMERCIAL2---SWITCHING1 NPN, 1 PNP - Pre-Biased (Dual)--80 @ 5mA 10V500nA250mV @ 300μA, 10mA--10k Ω-47k ΩROHS3 Compliant--SILICONunknownR-PDSO-F6SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR500mWNPN AND PNP50V100mA
-
--Surface MountSOT-563, SOT-666YES-Tape & Reel (TR)-e3yesObsolete1 (Unlimited)6-MATTE TIN--BUILT IN BIAS RESISTOR RATIO 2.14---FLAT260-40-6COMMERCIAL2---SWITCHING2 NPN - Pre-Biased (Dual)--80 @ 5mA 10V500nA250mV @ 1mA, 10mA--22k Ω-47k ΩROHS3 Compliant--SILICONunknownR-PDSO-F6SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR500mWNPN50V100mA
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
27 March 2024
LM358P Op-Amp: Characteristics, Package, Layout, Uses and More
Ⅰ. LM358P descriptionⅡ. Characteristics of LM358PⅢ. Package design of LM358PⅣ. Layout of LM358PⅤ. LM358P usesⅥ. LM358P circuitⅦ. Can LM358 and LM358P be replaced?Ⅷ. How to use LM358P correctly... -
27 March 2024
STM32F030K6T6 Microcontroller Symbol, Characteristics, Specifications and Other Details
Ⅰ. Description of STM32F030K6T6Ⅱ. Functional characteristics of STM32F030K6T6Ⅲ. STM32F030K6T6 specificationsⅣ. Structure of STM32F030K6T6Ⅴ. STM32F030K6T6 symbol, footprint and pin configurationⅥ. STM32F030K6T6 development tools and ecosystemⅦ. Application cases of STM32F030K6T6STM32F030K6T6... -
28 March 2024
An Introduction to TPS54302DDCR Synchronous Buck Converter
Ⅰ. What is TPS54302DDCR?Ⅱ. Characteristics of TPS54302DDCRⅢ. Simplified schematic of TPS54302DDCRⅣ. What are the advantages of TPS54302DDCR?Ⅴ. Technical parameters of TPS54302DDCRⅥ. Pin configuration and functions of TPS54302DDCRⅦ. Protection... -
28 March 2024
UCC27517DBVR Gate Driver: Replacements, Advantages, Application and Package
Ⅰ. UCC27517DBVR overviewⅡ. Technical parameters of UCC27517DBVRⅢ. UCC27517DBVR's typical characteristicsⅣ. What are the advantages of UCC27517DBVR compared with other gate driver ICs?Ⅴ. What applications is the UCC27517DBVR typically...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.