ON Semiconductor NSBC114EPDXV6T1
- Part Number:
- NSBC114EPDXV6T1
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2462134-NSBC114EPDXV6T1
- Description:
- TRANS PREBIAS NPN/PNP SOT563
- Datasheet:
- NSBC114EPDXV6T1,5 Series
ON Semiconductor NSBC114EPDXV6T1 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSBC114EPDXV6T1.
- Mounting TypeSurface Mount
- Package / CaseSOT-563, SOT-666
- Surface MountYES
- Transistor Element MaterialSILICON
- PackagingTape & Reel (TR)
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- Terminal FinishMATTE TIN
- Additional FeatureBUILT IN BIAS RESISTOR RATIO IS 1
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count6
- JESD-30 CodeR-PDSO-F6
- Qualification StatusCOMMERCIAL
- Number of Elements2
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
- Power - Max500mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN AND PNP
- Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
- DC Current Gain (hFE) (Min) @ Ic, Vce35 @ 5mA 10V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 300μA, 10mA
- Voltage - Collector Emitter Breakdown (Max)50V
- Current - Collector (Ic) (Max)100mA
- Resistor - Base (R1)10k Ω
- Resistor - Emitter Base (R2)10k Ω
- RoHS StatusROHS3 Compliant
NSBC114EPDXV6T1 Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NSBC114EPDXV6T1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NSBC114EPDXV6T1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NSBC114EPDXV6T1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NSBC114EPDXV6T1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
NSBC114EPDXV6T1 More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
SMALL SIGNAL BIPOLAR TRANSISTOR
TRANS PREBIAS NPN/PNP SOT563
Each |Onsemi NSBC114EPDXV6T1
OEMs, CMs ONLY (NO BROKERS)
SMALL SIGNAL BIPOLAR TRANSISTOR
TRANS PREBIAS NPN/PNP SOT563
Each |Onsemi NSBC114EPDXV6T1
OEMs, CMs ONLY (NO BROKERS)
The three parts on the right have similar specifications to NSBC114EPDXV6T1.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialPackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishAdditional FeatureTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Resistor - Base (R1)Resistor - Emitter Base (R2)RoHS StatusMountPublishedECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationReach Compliance CodeCurrent RatingBase Part NumberCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageLead FreeLifecycle StatusFactory Lead TimeNumber of PinsMax Operating TemperatureMin Operating TemperaturePolarityElement ConfigurationhFE MinRadiation HardeningView Compare
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NSBC114EPDXV6T1Surface MountSOT-563, SOT-666YESSILICONTape & Reel (TR)e3yesObsolete1 (Unlimited)6MATTE TINBUILT IN BIAS RESISTOR RATIO IS 1FLAT260406R-PDSO-F6COMMERCIAL2SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR500mWSWITCHINGNPN AND PNP1 NPN, 1 PNP - Pre-Biased (Dual)35 @ 5mA 10V500nA250mV @ 300μA, 10mA50V100mA10k Ω10k ΩROHS3 Compliant-----------------------
-
Surface MountSOT-563, SOT-666-SILICONTape & Reel (TR)e3-Obsolete1 (Unlimited)6Tin (Sn)BUILT IN BIAS RESISTOR RATIO IS 1FLAT260406R-PDSO-F6Not Qualified2SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR-SWITCHINGNPN2 NPN - Pre-Biased (Dual)3 @ 5mA 10V500nA250mV @ 5mA, 10mA--1k Ω1k ΩNon-RoHS CompliantSurface Mount2005EAR99BIP General Purpose Small Signal50V500mWunknown100mANSBC1*250mV100mA50VContains Lead---------
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Surface MountSOT-563, SOT-666YESSILICONTape & Reel (TR)e3yesObsolete1 (Unlimited)6MATTE TINBUILT IN BIAS RESISTOR RATIO 2.14FLAT260406R-PDSO-F6COMMERCIAL2SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR500mWSWITCHINGNPN2 NPN - Pre-Biased (Dual)80 @ 5mA 10V500nA250mV @ 1mA, 10mA50V100mA22k Ω47k ΩROHS3 Compliant------unknown---------------
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Surface MountSOT-963YES-Tape & Reel (TR)e3yesActive1 (Unlimited)6Tin (Sn)BUILT IN BIAS RESISTOR RATIO 0.047FLAT--6--2--SWITCHING-2 NPN - Pre-Biased (Dual)80 @ 5mA 10V500nA250mV @ 300μA, 10mA--2.2k Ω47k ΩROHS3 Compliant-2008EAR99BIP General Purpose Small Signal-339mW--NSBC1*50V100mA50VLead FreeACTIVE (Last Updated: 2 days ago)8 Weeks6150°C-55°CNPN, PNPDual80No
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