ON Semiconductor NSBC114EDXV6T1
- Part Number:
- NSBC114EDXV6T1
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2462140-NSBC114EDXV6T1
- Description:
- TRANS 2NPN PREBIAS 0.5W SOT563
- Datasheet:
- NSBC114EDXV6Tx
ON Semiconductor NSBC114EDXV6T1 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSBC114EDXV6T1.
- MountSurface Mount
- Package / CaseSOT-563
- Number of Pins6
- PackagingCut Tape (CT)
- Published2006
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureBUILT IN BIAS RESISTOR RATIO IS 1
- SubcategoryBIP General Purpose Small Signal
- Voltage - Rated DC50V
- Max Power Dissipation500mW
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codeunknown
- Current Rating100mA
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count6
- Qualification StatusNot Qualified
- Number of Elements2
- PolarityNPN
- Element ConfigurationDual
- Power Dissipation357mW
- Transistor ApplicationSWITCHING
- Collector Emitter Voltage (VCEO)250mV
- Max Collector Current100mA
- Collector Emitter Breakdown Voltage50V
- hFE Min35
- DC Current Gain-Min (hFE)35
- Continuous Collector Current100mA
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
NSBC114EDXV6T1 Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NSBC114EDXV6T1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NSBC114EDXV6T1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NSBC114EDXV6T1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NSBC114EDXV6T1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
NSBC114EDXV6T1 More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
TRANS 2NPN PREBIAS 0.5W SOT563
TRANS 2NPN PREBIAS 0.5W SOT563
The three parts on the right have similar specifications to NSBC114EDXV6T1.
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ImagePart NumberManufacturerMountPackage / CaseNumber of PinsPackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltagehFE MinDC Current Gain-Min (hFE)Continuous Collector CurrentRoHS StatusLead FreeLifecycle StatusFactory Lead TimeMounting TypeSurface MountPbfree CodeBase Part NumberTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcResistor - Base (R1)Radiation HardeningTransistor Element MaterialJESD-30 CodeConfigurationPower - MaxPolarity/Channel TypeVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Resistor - Emitter Base (R2)Max Breakdown VoltageView Compare
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NSBC114EDXV6T1Surface MountSOT-5636Cut Tape (CT)2006e3Obsolete1 (Unlimited)6EAR99Tin (Sn)150°C-55°CBUILT IN BIAS RESISTOR RATIO IS 1BIP General Purpose Small Signal50V500mWFLAT260unknown100mA406Not Qualified2NPNDual357mWSWITCHING250mV100mA50V3535100mANon-RoHS CompliantContains Lead----------------------
-
-SOT-9636Tape & Reel (TR)2010e3Active1 (Unlimited)6EAR99Tin (Sn)150°C-55°CBUILT IN BIAS RESISTORBIP General Purpose Small Signals-339mWFLAT----6-2NPNDual-SWITCHING50V100mA50V160--ROHS3 CompliantLead FreeACTIVE (Last Updated: 5 days ago)8 WeeksSurface MountYESyesNSBC1*2 NPN - Pre-Biased (Dual)160 @ 5mA 10V500nA250mV @ 5mA, 10mA100k ΩNo---------
-
-SOT-563, SOT-666-Tape & Reel (TR)-e3Obsolete1 (Unlimited)6-MATTE TIN--BUILT IN BIAS RESISTOR RATIO IS 4.7---FLAT260unknown-406COMMERCIAL2---SWITCHING------ROHS3 Compliant---Surface MountYESyes-1 NPN, 1 PNP - Pre-Biased (Dual)80 @ 5mA 10V500nA250mV @ 300μA, 10mA10k Ω-SILICONR-PDSO-F6SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR500mWNPN AND PNP50V100mA47k Ω-
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Surface MountSOT-563, SOT-6666Tape & Reel (TR)2008e3Obsolete1 (Unlimited)6EAR99Tin (Sn)150°C-55°C-BIP General Purpose Small Signal50V500mWFLAT260unknown100mA406Not Qualified2PNPDual357mWSWITCHING250mV100mA50V80-100mANon-RoHS CompliantContains Lead--Surface Mount--NSBC1*1 NPN, 1 PNP - Pre-Biased (Dual)80 @ 5mA 10V500nA250mV @ 300μA, 10mA2.2k Ω--------47k Ω50V
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