ON Semiconductor NJT4031NT1G
- Part Number:
- NJT4031NT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2462875-NJT4031NT1G
- Description:
- TRANS NPN 40V 3A SOT223
- ECAD Model:
-
- Datasheet:
- NJT4031NT1G
ON Semiconductor NJT4031NT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NJT4031NT1G.
- Lifecycle StatusACTIVE (Last Updated: 6 days ago)
- Factory Lead Time7 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Surface MountYES
- Number of Pins4
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Max Power Dissipation2W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Frequency215MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberNJT4031
- Pin Count4
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation2W
- Case ConnectionCOLLECTOR
- Gain Bandwidth Product215MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current3A
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 1A 1V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic300mV @ 300mA, 3A
- Collector Emitter Breakdown Voltage40V
- Transition Frequency215MHz
- Collector Emitter Saturation Voltage300mV
- Max Breakdown Voltage40V
- Collector Base Voltage (VCBO)40V
- Emitter Base Voltage (VEBO)6V
- hFE Min220
- Height1.65mm
- Length6.7mm
- Width3.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NJT4031NT1G Overview
DC current gain in this device equals 200 @ 1A 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 300mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 300mA, 3A.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 215MHz.Breakdown input voltage is 40V volts.In extreme cases, the collector current can be as low as 3A volts.
NJT4031NT1G Features
the DC current gain for this device is 200 @ 1A 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 215MHz
NJT4031NT1G Applications
There are a lot of ON Semiconductor
NJT4031NT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 200 @ 1A 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 300mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 300mA, 3A.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 215MHz.Breakdown input voltage is 40V volts.In extreme cases, the collector current can be as low as 3A volts.
NJT4031NT1G Features
the DC current gain for this device is 200 @ 1A 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 215MHz
NJT4031NT1G Applications
There are a lot of ON Semiconductor
NJT4031NT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
NJT4031NT1G More Descriptions
ON Semi NJT4031NT1G NPN Bipolar Transistor, 3 A, 40 V SOT-223 | ON Semiconductor NJT4031NT1G
40V 2W 200@1A,1V 3A NPN SOT-223 Bipolar Transistors - BJT ROHS
Trans GP BJT NPN 40V 3A Automotive 4-Pin(3 Tab) SOT-223 T/R
3.0 A, 40 V NPN Bipolar Power Transistor
NJT Series 40 V 3 A Surface Mount NPN Silicon Power Transistor - SOT-223
Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-261AA, Plastic/Epoxy, 4 Pin
Bipolar Transistors - BJT NPN 40V LO SAT BP
The combination of low saturation voltage and high gain makes this an ideal device for high speed switching applications where power savings is a concern.
Transistor, Npn, 40V, 3A, Sot-223-4; Transistor Polarity:Npn; Collector Emitter Voltage Max:40V; Continuous Collector Current:3A; Power Dissipation:2W; Transistor Mounting:Surface Mount; No. Of Pins:4Pins; Transition Frequency:215Mhzrohs Compliant: Yes |Onsemi NJT4031NT1G.
TRANSISTOR, BIPOL, NPN, 40V; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 215MHz; Power Dissipation Pd: 2W; DC Collector Current: 3A; DC Current Gain hFE: 100hFE; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 3 - 168 hours; SVHC: Lead (27-Jun-2018)
40V 2W 200@1A,1V 3A NPN SOT-223 Bipolar Transistors - BJT ROHS
Trans GP BJT NPN 40V 3A Automotive 4-Pin(3 Tab) SOT-223 T/R
3.0 A, 40 V NPN Bipolar Power Transistor
NJT Series 40 V 3 A Surface Mount NPN Silicon Power Transistor - SOT-223
Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-261AA, Plastic/Epoxy, 4 Pin
Bipolar Transistors - BJT NPN 40V LO SAT BP
The combination of low saturation voltage and high gain makes this an ideal device for high speed switching applications where power savings is a concern.
Transistor, Npn, 40V, 3A, Sot-223-4; Transistor Polarity:Npn; Collector Emitter Voltage Max:40V; Continuous Collector Current:3A; Power Dissipation:2W; Transistor Mounting:Surface Mount; No. Of Pins:4Pins; Transition Frequency:215Mhzrohs Compliant: Yes |Onsemi NJT4031NT1G.
TRANSISTOR, BIPOL, NPN, 40V; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 215MHz; Power Dissipation Pd: 2W; DC Collector Current: 3A; DC Current Gain hFE: 100hFE; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 3 - 168 hours; SVHC: Lead (27-Jun-2018)
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