ON Semiconductor NJT4030PT1G
- Part Number:
- NJT4030PT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2462877-NJT4030PT1G
- Description:
- TRANS PNP 40V 3A SOT-223
- ECAD Model:
-
- Datasheet:
- NJT4030PT1G
ON Semiconductor NJT4030PT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NJT4030PT1G.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time4 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins4
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Max Power Dissipation2W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Frequency160MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberNJT4030
- Pin Count4
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation2W
- Case ConnectionCOLLECTOR
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product160MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current3A
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 1A 1V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 300mA, 3A
- Collector Emitter Breakdown Voltage40V
- Transition Frequency160MHz
- Collector Emitter Saturation Voltage500mV
- Max Breakdown Voltage40V
- Collector Base Voltage (VCBO)40V
- Emitter Base Voltage (VEBO)6V
- hFE Min200
- Height1.651mm
- Length6.6802mm
- Width3.7084mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NJT4030PT1G Overview
DC current gain in this device equals 200 @ 1A 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 300mA, 3A.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 160MHz.Breakdown input voltage is 40V volts.In extreme cases, the collector current can be as low as 3A volts.
NJT4030PT1G Features
the DC current gain for this device is 200 @ 1A 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 160MHz
NJT4030PT1G Applications
There are a lot of ON Semiconductor
NJT4030PT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 200 @ 1A 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 300mA, 3A.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 160MHz.Breakdown input voltage is 40V volts.In extreme cases, the collector current can be as low as 3A volts.
NJT4030PT1G Features
the DC current gain for this device is 200 @ 1A 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 160MHz
NJT4030PT1G Applications
There are a lot of ON Semiconductor
NJT4030PT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
NJT4030PT1G More Descriptions
ON Semi NJT4030PT1G PNP Bipolar Transistor, 5 A, 40 V SOT-223 | ON Semiconductor NJT4030PT1G
Trans GP BJT PNP 40V 3A 2000mW Automotive 4-Pin(3 Tab) SOT-223 T/R
NJT Series 40 V 3 A Surface Mount PNP Silicon Power Transistor - SOT-223
Bipolar Power Transistors, PNP, 3.0 A, 40 V
Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-261AA, Plastic/Epoxy, 4 Pin
Transistor, BIPOL, PNP,-40V, SOT223; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency ft:160MHz; Power
The combination of low saturation voltage and high gain makes this an ideal device for high speed switching applications where power savings is a concern.
Transistor, Pnp, -40V, -3A, Sot-223-4; Transistor Polarity:Pnp; Collector Emitter Voltage Max:40V; Continuous Collector Current:3A; Power Dissipation:2W; Transistor Mounting:Surface Mount; No. Of Pins:4Pins; Product Range:- Rohs Compliant: Yes |Onsemi NJT4030PT1G.
TRANS, BIPOL, PNP,-40V, SOT223; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -40V; Transition Frequency ft: 160MHz; Power Dissipation Pd: 2W; DC Collector Current: -3A; DC Current Gain hFE: 100hFE; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 3 - 168 hours; SVHC: Lead (27-Jun-2018)
Trans GP BJT PNP 40V 3A 2000mW Automotive 4-Pin(3 Tab) SOT-223 T/R
NJT Series 40 V 3 A Surface Mount PNP Silicon Power Transistor - SOT-223
Bipolar Power Transistors, PNP, 3.0 A, 40 V
Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-261AA, Plastic/Epoxy, 4 Pin
Transistor, BIPOL, PNP,-40V, SOT223; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency ft:160MHz; Power
The combination of low saturation voltage and high gain makes this an ideal device for high speed switching applications where power savings is a concern.
Transistor, Pnp, -40V, -3A, Sot-223-4; Transistor Polarity:Pnp; Collector Emitter Voltage Max:40V; Continuous Collector Current:3A; Power Dissipation:2W; Transistor Mounting:Surface Mount; No. Of Pins:4Pins; Product Range:- Rohs Compliant: Yes |Onsemi NJT4030PT1G.
TRANS, BIPOL, PNP,-40V, SOT223; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -40V; Transition Frequency ft: 160MHz; Power Dissipation Pd: 2W; DC Collector Current: -3A; DC Current Gain hFE: 100hFE; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 3 - 168 hours; SVHC: Lead (27-Jun-2018)
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