ON Semiconductor NJL3281DG
- Part Number:
- NJL3281DG
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2462808-NJL3281DG
- Description:
- TRANS NPN 260V 15A TO-264
- ECAD Model:
-
- Datasheet:
- NJL3281DG
ON Semiconductor NJL3281DG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NJL3281DG.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time5 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-264-5
- Surface MountNO
- Number of Pins5
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Additional FeatureHIGH RELIABILITY
- SubcategoryOther Transistors
- Voltage - Rated DC260V
- Max Power Dissipation200W
- Peak Reflow Temperature (Cel)260
- Current Rating15A
- Frequency30MHz
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count5
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation200W
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product30MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)260V
- Max Collector Current15A
- DC Current Gain (hFE) (Min) @ Ic, Vce75 @ 5A 5V
- Current - Collector Cutoff (Max)50μA ICBO
- Vce Saturation (Max) @ Ib, Ic3V @ 1A, 10A
- Collector Emitter Breakdown Voltage260V
- Transition Frequency30MHz
- Collector Emitter Saturation Voltage3V
- Max Breakdown Voltage260V
- Collector Base Voltage (VCBO)260V
- Emitter Base Voltage (VEBO)5V
- hFE Min75
- Height25.98mm
- Length19.89mm
- Width4.89mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NJL3281DG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 75 @ 5A 5V.With a collector emitter saturation voltage of 3V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 1A, 10A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 15A.A transition frequency of 30MHz is present in the part.There is a breakdown input voltage of 260V volts that it can take.Collector current can be as low as 15A volts at its maximum.
NJL3281DG Features
the DC current gain for this device is 75 @ 5A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 1A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 15A
a transition frequency of 30MHz
NJL3281DG Applications
There are a lot of ON Semiconductor
NJL3281DG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 75 @ 5A 5V.With a collector emitter saturation voltage of 3V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 1A, 10A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 15A.A transition frequency of 30MHz is present in the part.There is a breakdown input voltage of 260V volts that it can take.Collector current can be as low as 15A volts at its maximum.
NJL3281DG Features
the DC current gain for this device is 75 @ 5A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 1A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 15A
a transition frequency of 30MHz
NJL3281DG Applications
There are a lot of ON Semiconductor
NJL3281DG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
NJL3281DG More Descriptions
Bipolar Power Transistor, NPN, ThermalTrak™, 15 A, 260 V
Trans GP BJT NPN 260V 15A 5-Pin(5 Tab) TO-264 Rail - Rail/Tube
Power Bipolar Transistor, 15A I(C), 260V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 5 Pin
The ThermalTrak family of devices has been designed to eliminate thermal equilibrium lag time and bias trimming in audio amplifier applications. They can also be used in other applications as transistor die protection devices.
TRANSISTOR, BIPOL, NPN, 250V, TO-264-5; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 260VDC; Transition Frequency ft: 30MHz; Power Dissipation Pd: 200W; DC Collector Current: 15A; DC Current Gain hFE: 45hFE; Transistor Case Style: TO-264; No. of Pins: 5Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: Lead (27-Jun-2018)
Trans GP BJT NPN 260V 15A 5-Pin(5 Tab) TO-264 Rail - Rail/Tube
Power Bipolar Transistor, 15A I(C), 260V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 5 Pin
The ThermalTrak family of devices has been designed to eliminate thermal equilibrium lag time and bias trimming in audio amplifier applications. They can also be used in other applications as transistor die protection devices.
TRANSISTOR, BIPOL, NPN, 250V, TO-264-5; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 260VDC; Transition Frequency ft: 30MHz; Power Dissipation Pd: 200W; DC Collector Current: 15A; DC Current Gain hFE: 45hFE; Transistor Case Style: TO-264; No. of Pins: 5Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: Lead (27-Jun-2018)
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