ON Semiconductor NJD1718T4G
- Part Number:
- NJD1718T4G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3813368-NJD1718T4G
- Description:
- TRANS PNP 50V 2A DPAK
- ECAD Model:
-
- Datasheet:
- NJD1718T4G
ON Semiconductor NJD1718T4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NJD1718T4G.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Max Power Dissipation1.68W
- Terminal FormGULL WING
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Element ConfigurationSingle
- Case ConnectionCOLLECTOR
- Power - Max1.68W
- Transistor ApplicationSWITCHING
- Halogen FreeHalogen Free
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)500mV
- Max Collector Current2A
- DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 500mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 1A
- Collector Emitter Breakdown Voltage50V
- Transition Frequency80MHz
- Max Breakdown Voltage50V
- Frequency - Transition80MHz
- Collector Base Voltage (VCBO)50V
- Emitter Base Voltage (VEBO)-5V
- hFE Min70
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NJD1718T4G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 70 @ 500mA 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at -5V can result in a high level of efficiency.There is a transition frequency of 80MHz in the part.Single BJT transistor can be broken down at a voltage of 50V volts.When collector current reaches its maximum, it can reach 2A volts.
NJD1718T4G Features
the DC current gain for this device is 70 @ 500mA 2V
the vce saturation(Max) is 500mV @ 50mA, 1A
the emitter base voltage is kept at -5V
a transition frequency of 80MHz
NJD1718T4G Applications
There are a lot of ON Semiconductor
NJD1718T4G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 70 @ 500mA 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at -5V can result in a high level of efficiency.There is a transition frequency of 80MHz in the part.Single BJT transistor can be broken down at a voltage of 50V volts.When collector current reaches its maximum, it can reach 2A volts.
NJD1718T4G Features
the DC current gain for this device is 70 @ 500mA 2V
the vce saturation(Max) is 500mV @ 50mA, 1A
the emitter base voltage is kept at -5V
a transition frequency of 80MHz
NJD1718T4G Applications
There are a lot of ON Semiconductor
NJD1718T4G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
NJD1718T4G More Descriptions
Power Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
2.0 A, 50 V PNP Power Transistor
Trans GP BJT PNP 50V 2A 1680mW Automotive 3-Pin(2 Tab) DPAK T/R
2.0 A, 50 V PNP Power Transistor
Trans GP BJT PNP 50V 2A 1680mW Automotive 3-Pin(2 Tab) DPAK T/R
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