Fairchild/ON Semiconductor NDS9956A

Name: NDS9956A
Brand: Fairchild/ON Semiconductor
SKU: 2477674-NDS9956A
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NDS9956A

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2477674-NDS9956A

Description:: MOSFET 2N-CH 30V 3.7A 8-SOIC

ECAD Model:

Datasheet:: NDS9956A

Specifications

Fairchild/ON Semiconductor NDS9956A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor NDS9956A.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
230.4mg
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
1997
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Termination
SMD/SMT
Voltage - Rated DC
30V
Max Power Dissipation
900mW
Current Rating
3.7A
Number of Elements
2
Row Spacing
6.3 mm
Element Configuration
Dual
Power Dissipation
2W
FET Type
2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs
80m Ω @ 2.2A, 10V
Vgs(th) (Max) @ Id
2.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
320pF @ 10V
Gate Charge (Qg) (Max) @ Vgs
27nC @ 10V
Rise Time
13ns
Fall Time (Typ)
5 ns
Turn-Off Delay Time
21 ns
Continuous Drain Current (ID)
3.7A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
Dual Supply Voltage
30V
FET Feature
Logic Level Gate
Nominal Vgs
1.7 V
Width
4.05mm
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

NDS9956A   Description
   These N-channel enhanced power field effect transistors are produced using Fairchild's proprietary high cell density DMOS technology. This high-density process is specifically tailored to minimize on-resistance, provides excellent switching performance, and withstands high-energy pulses in avalanche and commutation modes. These devices are particularly suitable for low-voltage applications such as DC/DC conversion and fast switching DC motor control. Low inline power consumption and anti-transient ability are required.
NDS9956A   Features
3.7A,30VR=0.08@V=10V High density cell design for extremely low Rosionr High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package NDS9956A Applications
low-voltage applications

NDS9956A More Descriptions

Trans MOSFET N-CH 30V 3.7A 8-Pin SOIC N T/R
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:3.7A; On Resistance, Rds(on):0.08ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
MOSFET, DUAL, NN, LOGIC, SO-8; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:3.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:3.7A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:2; Package / Case:SOIC; Pin Configuration:c; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:15A; Row Pitch:6.3mm; SMD Marking:NDS9956A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as DC/DC conversion and DC motor control where fast switching, low in-line power loss, and resistance to transients are needed.

Product Comparison

The three parts on the right have similar specifications to NDS9956A.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Termination

Voltage - Rated DC

Max Power Dissipation

Current Rating

Number of Elements

Row Spacing

Element Configuration

Power Dissipation

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

FET Feature

Nominal Vgs

Width

REACH SVHC

RoHS Status

Lead Free

Lifecycle Status

Factory Lead Time

Transistor Element Material

Series

JESD-609 Code

Pbfree Code

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Terminal Form

Operating Mode

Turn On Delay Time

Power - Max

Transistor Application

Drain to Source Voltage (Vdss)

Threshold Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

FET Technology

Height

Length

Radiation Hardening

Supplier Device Package

Current - Continuous Drain (Id) @ 25°C

View Compare
NDS9956A

Fairchild/ON Semiconductor

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

230.4mg

-55°C~150°C TJ

Tape & Reel (TR)

1997

Obsolete

1 (Unlimited)

SMD/SMT

30V

900mW

3.7A

2

6.3 mm

Dual

2W

2 N-Channel (Dual)

80m Ω @ 2.2A, 10V

2.8V @ 250μA

320pF @ 10V

27nC @ 10V

13ns

5 ns

21 ns

3.7A

20V

30V

30V

Logic Level Gate

1.7 V

4.05mm

No SVHC

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
NDS9948

Fairchild/ON Semiconductor

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

187mg

-55°C~175°C TJ

Tape & Reel (TR)

2002

Active

1 (Unlimited)

-

-60V

2W

-2.3A

2

-

Dual

2W

2 P-Channel (Dual)

250m Ω @ 2.3A, 10V

3V @ 250μA

394pF @ 30V

13nC @ 10V

9ns

3 ns

16 ns

2.3A

20V

-60V

-

Logic Level Gate

-1.5 V

4mm

No SVHC

ROHS3 Compliant

Lead Free

ACTIVE (Last Updated: 3 days ago)

20 Weeks

SILICON

PowerTrench®

e3

yes

8

EAR99

Tin (Sn)

Other Transistors

GULL WING

ENHANCEMENT MODE

6 ns

900mW

SWITCHING

60V

-1.5V

10A

15 mJ

METAL-OXIDE SEMICONDUCTOR

1.5mm

5mm

No

-

-

NDS9956A vs NDS9948
NDS9958

Fairchild/ON Semiconductor

-

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

-

-55°C~150°C TJ

Tape & Reel (TR)

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

N and P-Channel

100mOhm @ 3.5A, 10V

3V @ 250μA

525pF @ 10V

30nC @ 10V

-

-

-

-

-

-

-

Logic Level Gate

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

900mW

-

20V

-

-

-

-

-

-

-

8-SOIC

3.5A

NDS9956A vs NDS9958
NDS9943

Fairchild/ON Semiconductor

-

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

-

-55°C~150°C TJ

Tape & Reel (TR)

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

N and P-Channel

125mOhm @ 3A, 10V

-

525pF @ 10V

27nC @ 10V

-

-

-

-

-

-

-

Logic Level Gate

-

-

-

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

900mW

-

20V

-

-

-

-

-

-

-

8-SOIC

3A 2.8A

NDS9956A vs NDS9943