Fairchild/ON Semiconductor NDS9945

Name: NDS9945
Brand: Fairchild/ON Semiconductor
SKU: 2473529-NDS9945
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NDS9945

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2473529-NDS9945

Description:: MOSFET 2N-CH 60V 3.5A 8-SOIC

ECAD Model:

Datasheet:: NDS9945

Specifications

Fairchild/ON Semiconductor NDS9945 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor NDS9945.

Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Factory Lead Time
11 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
230.4mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2017
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
100mOhm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
60V
Max Power Dissipation
1.6W
Terminal Form
GULL WING
Current Rating
3.5A
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.6W
Turn On Delay Time
5 ns
Power - Max
900mW
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
100m Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
345pF @ 25V
Gate Charge (Qg) (Max) @ Vgs
30nC @ 10V
Rise Time
7.5ns
Fall Time (Typ)
7 ns
Turn-Off Delay Time
20 ns
Continuous Drain Current (ID)
3.5A
Threshold Voltage
1.7V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
60V
Pulsed Drain Current-Max (IDM)
10A
Dual Supply Voltage
60V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Nominal Vgs
1.7 V
Height
1.57mm
Length
4.9mm
Width
3.9mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

NDS9945 Description
SO-8 N channel enhanced power field effect transistors are produced using high cell density DMOS technology unique to Fairchild. This very high-density process is specially tailored to provide excellent switching performance and minimum state impedance. These devices are particularly suitable for low-voltage applications, such as fast-switching disk drive motor control batteries or high-voltage circuits. Low inline power consumption and anti-transient ability are required. NDS9945 Features
3.5A60VR=0.100Ω@V=10V RDSON=0.200Ω@Vas=4.5V. High density cell design for extremely low RasON High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package NDS9945 Applications
fast-switching disk drive motor control batteries high-voltage circuits

NDS9945 More Descriptions

Dual N-Channel Enhancement Mode Field Effect Transistor 60V, 3.5A, 100mΩ
Transistor MOSFET Array Dual N-CH 60V 3.5A 8-Pin SOIC T/R - Product that comes on tape, but is not r
Dual N-Channel 60 V 0.3 Ohm 30 nC 2 W DMOS Surface Mount Mosfet - SOIC-8
Transistor, MOSFET; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:3.5A; Source Voltage Vds:60V; On Resistance Rds(on):0.1ohm;
SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance. These devices are particularly suited for low voltage applications such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
TRANSISTOR, MOSFET; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 3.5A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 1.6W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 3.5A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 60V; Voltage Vgs Max: 1.7V; Voltage Vgs Rds on Measurement: 10V

Product Comparison

The three parts on the right have similar specifications to NDS9945.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Form

Current Rating

Number of Elements

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

Power - Max

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Dual Supply Voltage

FET Technology

FET Feature

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Series

Drain to Source Voltage (Vdss)

Avalanche Energy Rating (Eas)

Supplier Device Package

Current - Continuous Drain (Id) @ 25°C

View Compare
NDS9945

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

11 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

230.4mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2017

e3

yes

Active

1 (Unlimited)

8

SMD/SMT

EAR99

100mOhm

Tin (Sn)

FET General Purpose Power

60V

1.6W

GULL WING

3.5A

2

Dual

ENHANCEMENT MODE

1.6W

5 ns

900mW

2 N-Channel (Dual)

SWITCHING

100m Ω @ 3.5A, 10V

3V @ 250μA

345pF @ 25V

30nC @ 10V

7.5ns

7 ns

20 ns

3.5A

1.7V

20V

60V

10A

60V

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

1.7 V

1.57mm

4.9mm

3.9mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-
NDS9948

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

20 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

187mg

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

2002

e3

yes

Active

1 (Unlimited)

8

-

EAR99

-

Tin (Sn)

Other Transistors

-60V

2W

GULL WING

-2.3A

2

Dual

ENHANCEMENT MODE

2W

6 ns

900mW

2 P-Channel (Dual)

SWITCHING

250m Ω @ 2.3A, 10V

3V @ 250μA

394pF @ 30V

13nC @ 10V

9ns

3 ns

16 ns

2.3A

-1.5V

20V

-60V

10A

-

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

-1.5 V

1.5mm

5mm

4mm

No SVHC

No

ROHS3 Compliant

Lead Free

PowerTrench®

60V

15 mJ

-

-

NDS9945 vs NDS9948
NDS9943

Fairchild/ON Semiconductor

-

-

-

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

900mW

N and P-Channel

-

125mOhm @ 3A, 10V

-

525pF @ 10V

27nC @ 10V

-

-

-

-

-

-

-

-

-

-

Logic Level Gate

-

-

-

-

-

-

Non-RoHS Compliant

-

-

20V

-

8-SOIC

3A 2.8A

NDS9945 vs NDS9943
NDS9959

Fairchild/ON Semiconductor

-

-

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

230.4mg

-

-55°C~150°C TJ

Tape & Reel (TR)

1998

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

50V

900mW

-

2A

2

Dual

-

2W

-

-

2 N-Channel (Dual)

-

300m Ω @ 1.5A, 10V

4V @ 250μA

250pF @ 25V

15nC @ 10V

8ns

11 ns

9 ns

2A

-

20V

50V

-

-

-

Standard

-

-

-

-

-

-

RoHS Compliant

Lead Free

-

-

-

-

-

NDS9945 vs NDS9959