Fairchild/ON Semiconductor NDS9936
- Part Number:
- NDS9936
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2477699-NDS9936
- Description:
- MOSFET 2N-CH 30V 5A 8-SOIC
- Datasheet:
- NDS9936
Fairchild/ON Semiconductor NDS9936 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor NDS9936.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Voltage - Rated DC30V
- Max Power Dissipation900mW
- Current Rating5A
- Number of Elements2
- Power Dissipation2W
- FET Type2 N-Channel (Dual)
- Rds On (Max) @ Id, Vgs50m Ω @ 5A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds525pF @ 15V
- Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
- Rise Time10ns
- Fall Time (Typ)10 ns
- Turn-Off Delay Time25 ns
- Continuous Drain Current (ID)5A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage30V
- FET FeatureLogic Level Gate
- RoHS StatusRoHS Compliant
- Lead FreeContains Lead
NDS9936 Description
These N-channel enhanced power field effect transistors are produced using high cell density unique to Xiantong. DMOS technology. This very high-density process is specially tailored to minimize on-resistance and provides excellent switching performance. These devices are particularly suitable for low-voltage applications such as DC/DC converters, disk drives, motor controls, and other battery-powered circuits for fast switching. Low in-line power loss. It needs to be resistant to transient.
NDS9936 Features
5A30VR=0.05@Vg=10V High density cell design for extremely low Rasion High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package NDS9936 Applications
DC/DC converters disk drives motor controls battery-powered circuits
5A30VR=0.05@Vg=10V High density cell design for extremely low Rasion High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package NDS9936 Applications
DC/DC converters disk drives motor controls battery-powered circuits
NDS9936 More Descriptions
Tape & Reel (TR) Surface Mount 2N-Channel (Dual) 2 Mosfet Array 35nC @ 10V 5A 900mW 10ns
Trans MOSFET N-CH 30V 5A 8-Pin SOIC T/R
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC/DC conversion, disk drive motor control, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Trans MOSFET N-CH 30V 5A 8-Pin SOIC T/R
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC/DC conversion, disk drive motor control, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
The three parts on the right have similar specifications to NDS9936.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Voltage - Rated DCMax Power DissipationCurrent RatingNumber of ElementsPower DissipationFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsGate Charge (Qg) (Max) @ VgsRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageFET FeatureRoHS StatusLead FreeLifecycle StatusFactory Lead TimeWeightTransistor Element MaterialSeriesPublishedJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeTerminal FinishSubcategoryTerminal FormElement ConfigurationOperating ModeTurn On Delay TimePower - MaxTransistor ApplicationDrain to Source Voltage (Vdss)Threshold VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)FET TechnologyNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningSupplier Device PackageCurrent - Continuous Drain (Id) @ 25°CView Compare
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NDS9936Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)30V900mW5A22W2 N-Channel (Dual)50m Ω @ 5A, 10V3V @ 250μA525pF @ 15V35nC @ 10V10ns10 ns25 ns5A20V30VLogic Level GateRoHS CompliantContains Lead--------------------------------
-
Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-55°C~175°C TJTape & Reel (TR)Active1 (Unlimited)-60V2W-2.3A22W2 P-Channel (Dual)250m Ω @ 2.3A, 10V3V @ 250μA394pF @ 30V13nC @ 10V9ns3 ns16 ns2.3A20V-60VLogic Level GateROHS3 CompliantLead FreeACTIVE (Last Updated: 3 days ago)20 Weeks187mgSILICONPowerTrench®2002e3yes8EAR99Tin (Sn)Other TransistorsGULL WINGDualENHANCEMENT MODE6 ns900mWSWITCHING60V-1.5V10A15 mJMETAL-OXIDE SEMICONDUCTOR-1.5 V1.5mm5mm4mmNo SVHCNo--
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-Surface Mount8-SOIC (0.154, 3.90mm Width)--55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)-----N and P-Channel100mOhm @ 3.5A, 10V3V @ 250μA525pF @ 10V30nC @ 10V------Logic Level Gate------------------900mW-20V----------8-SOIC3.5A
-
Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)50V900mW2A22W2 N-Channel (Dual)300m Ω @ 1.5A, 10V4V @ 250μA250pF @ 25V15nC @ 10V8ns11 ns9 ns2A20V50VStandardRoHS CompliantLead Free--230.4mg--1998-------Dual-----------------
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