Fairchild/ON Semiconductor NDS9925A
- Part Number:
- NDS9925A
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2477858-NDS9925A
- Description:
- MOSFET 2N-CH 20V 4.5A 8-SOIC
- Datasheet:
- NDS9925A
Fairchild/ON Semiconductor NDS9925A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor NDS9925A.
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Supplier Device Package8-SOIC
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Power - Max900mW
- FET Type2 N-Channel (Dual)
- Rds On (Max) @ Id, Vgs60mOhm @ 4.5A, 4.5V
- Vgs(th) (Max) @ Id1V @ 250μA
- Current - Continuous Drain (Id) @ 25°C4.5A
- Drain to Source Voltage (Vdss)20V
- FET FeatureLogic Level Gate
NDS9925A Overview
This product is manufactured by Fairchild/ON Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet NDS9925A or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NDS9925A. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Fairchild/ON Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet NDS9925A or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NDS9925A. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
NDS9925A More Descriptions
MOSFET 2N-CH 20V 4.5A 8-SOIC
Power Field-Effect Transistor, 4.5A I(D), 20V, 0.06ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
French Electronic Distributor since 1988
MOSFETs Dual N-Ch FET Enhancement Mode
Power Field-Effect Transistor, 4.5A I(D), 20V, 0.06ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
French Electronic Distributor since 1988
MOSFETs Dual N-Ch FET Enhancement Mode
The three parts on the right have similar specifications to NDS9925A.
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ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Power - MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°CDrain to Source Voltage (Vdss)FET FeatureLifecycle StatusFactory Lead TimeMountNumber of PinsWeightTransistor Element MaterialSeriesPublishedJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormCurrent RatingNumber of ElementsElement ConfigurationOperating ModePower DissipationTurn On Delay TimeTransistor ApplicationInput Capacitance (Ciss) (Max) @ VdsGate Charge (Qg) (Max) @ VgsRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)FET TechnologyNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeView Compare
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NDS9925ASurface Mount8-SOIC (0.154, 3.90mm Width)8-SOIC-55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)900mW2 N-Channel (Dual)60mOhm @ 4.5A, 4.5V1V @ 250μA4.5A20VLogic Level Gate---------------------------------------------
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Surface Mount8-SOIC (0.154, 3.90mm Width)--55°C~175°C TJTape & Reel (TR)Active1 (Unlimited)900mW2 P-Channel (Dual)250m Ω @ 2.3A, 10V3V @ 250μA-60VLogic Level GateACTIVE (Last Updated: 3 days ago)20 WeeksSurface Mount8187mgSILICONPowerTrench®2002e3yes8EAR99Tin (Sn)Other Transistors-60V2WGULL WING-2.3A2DualENHANCEMENT MODE2W6 nsSWITCHING394pF @ 30V13nC @ 10V9ns3 ns16 ns2.3A-1.5V20V-60V10A15 mJMETAL-OXIDE SEMICONDUCTOR-1.5 V1.5mm5mm4mmNo SVHCNoROHS3 CompliantLead Free
-
Surface Mount8-SOIC (0.154, 3.90mm Width)8-SOIC-55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)900mWN and P-Channel100mOhm @ 3.5A, 10V3V @ 250μA3.5A20VLogic Level Gate------------------------525pF @ 10V30nC @ 10V------------------
-
Surface Mount8-SOIC (0.154, 3.90mm Width)--55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)-2 N-Channel (Dual)300m Ω @ 1.5A, 10V4V @ 250μA--Standard--Surface Mount8230.4mg--1998------50V900mW-2A2Dual-2W--250pF @ 25V15nC @ 10V8ns11 ns9 ns2A-20V50V---------RoHS CompliantLead Free
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