NXP USA Inc. MW6S010NR1

Name: MW6S010NR1
Brand: NXP USA Inc.
SKU: 2475057-MW6S010NR1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MW6S010NR1

Manufacturer:: NXP USA Inc.

Ventron No:: 2475057-MW6S010NR1

Description:: FET RF 68V 960MHZ TO270-2

ECAD Model:

Datasheet:: MW6S010NR1

Specifications

NXP USA Inc. MW6S010NR1 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MW6S010NR1.

Factory Lead Time
10 Weeks
Package / Case
TO-270AA
Surface Mount
YES
Transistor Element Material
SILICON
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Voltage - Rated
68V
HTS Code
8541.29.00.75
Subcategory
FET General Purpose Power
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
Frequency
960MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
MW6S010
JESD-30 Code
R-PDFM-F2
Qualification Status
Not Qualified
Operating Temperature (Max)
225°C
Number of Elements
1
Configuration
SINGLE
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Current - Test
125mA
Transistor Application
AMPLIFIER
Polarity/Channel Type
N-CHANNEL
Transistor Type
LDMOS
Gain
18dB
DS Breakdown Voltage-Min
68V
Power - Output
10W
FET Technology
METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs)
61.4W
Voltage - Test
28V
RoHS Status
ROHS3 Compliant

Description

MW6S010NR1 Description MW6S010NR1 transistor is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes MW6S010NR1 MOSFET suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. MW6S010NR1 has the common source configuration. MW6S010NR1 Features Qualified Up to a Maximum of 32 VDD Operation On-Chip RF Feedback for Broadband Stability Integrated ESD Protection Characterized with Series Equivalent Large-Signal Impedance Parameters RoHS Compliant MW6S010NR1 Applications ISM applications DC large signal applications

MW6S010NR1 More Descriptions

RF Power Transistor,450 to 1500 MHz, 10 W, Typ Gain in dB is 18 @ 960 MHz, 28 V, LDMOS, SOT1732
Lateral N-Channel Broadband RF Power MOSFET, 450-1500 MHz, 10 W, 28 V, FM2FNXP Semiconductors SCT
RF MOSFET, N CHANNEL, 68V, TO-270; Transistor Type:RF FET; Drain Source Voltage, Vds:68V; RF Transistor Case:TO-270; Gain:18dB; Gate-Source Voltage:12V; Leaded Process Compatible:Yes; Operating Frequency Max:900MHz ;RoHS Compliant: Yes

Certification

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MW6S010~~(9)~~
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MW6S0~~(11)~~
MW6S~~(11)~~
MW6~~(48)~~

Part Number	Manufacturers	Description	Stock	Price
MW6S010NR1 DISTI #MW6S010NR1	NXP Semiconductors	Trans RF MOSFET N-CH 68V 3-Pin TO-270 T/R	402	1 $20.033 10 $18.332 25 $17.722 100 $15.322 250 $14.154
MW6S010NR1 DISTI #MW6S010NR1	NXP Semiconductors	FET RF 68V 960MHZ TO270-2 RoHS: Compliant	716	1 $20.8 10 $19.114 100 $16.143
MW6S010NR1 DISTI #MW6S010NR1	NXP Semiconductors	FET RF 68V 960MHZ TO270-2 RoHS: Compliant	716	1 $20.8 10 $19.114 100 $16.143
MW6S010NR1 DISTI #MW6S010NR1	NXP Semiconductors	FET RF 68V 960MHZ TO270-2 RoHS: Compliant	500	500 $13.94204
MW6S010NR1 DISTI #MW6S010NR1	NXP Semiconductors	Trans RF MOSFET N-CH 68V 3-Pin TO-270 T/R	500	3 $21.5
MW6S010NR1 DISTI #MW6S010NR1	NXP Semiconductors	Trans RF MOSFET N-CH 68V 3-Pin TO-270 T/R	404	1 $20.033 10 $18.332 25 $17.722 100 $15.322 250 $14.154
MW6S010NR1 DISTI #MW6S010NR1	NXP Semiconductors	Trans MOSFET N-CH 68V 3-Pin TO-270 T/R - Tape and RoHS: Compliant	0	500 $13.99 1000 $13.39 2000 $12.89 3000 $12.39 5000 $12.19
MW6S010NR1 DISTI #MW6S010NR1	NXP Semiconductors	Trans MOSFET N-CH 68V 3-Pin TO-270 T/R (Alt: MW6S0 RoHS: Compliant	0	500 $13.89 1000 $13.29 2000 $12.79 3000 $11.89 5000 $11.09
MW6S010NR1 DISTI #MW6S010NR1	NXP Semiconductors	RF FET, 68V, 1.5GHZ-450MHZ, TO-270, Drain Source	500	1 $20.79 10 $19.12 25 $18.27 50 $17.21 100 $16.15 250 $14.43
MW6S010NR1 DISTI #MW6S010NR1	NXP Semiconductors	RF MOSFET, N CHANNEL, 68V, TO-270, Drain Source V	0	1 $18.72 10 $17.98 25 $16.93 100 $11 500 $10.58
MW6S010NR1 DISTI #MW6S010NR1	NXP Semiconductors	RF MOSFET Transistors HV6 900MHZ 10W TO270-2N RoHS: Compliant	709	1 $20.79 10 $19.12 25 $18.27 100 $16.15 250 $14.43 500 $13.95
MW6S010NR1 DISTI #MW6S010NR1	NXP Semiconductors	RF POWER TRANSISTOR RoHS: Compliant	998	500 $16.35
MW6S010NR1 DISTI #MW6S010NR1	NXP Semiconductors	RF FET, 68V, 1.5GHZ-450MHZ, TO-270 RoHS: Compliant	260	1 $28.97 10 $27.76 100 $25.63
MW6S010NR1 DISTI #MW6S010NR1	NXP Semiconductors	RF FET, 68V, 1.5GHZ-450MHZ, TO-270 RoHS: Compliant	260	1 $15.73 5 $14.78 10 $13.82 50 $13.02 100 $12.22
MW6S010NR1 DISTI #MW6S010NR1	NXP Semiconductors	Trans RF MOSFET N-CH 68V 3-Pin TO-270 T/R RoHS: Compliant	404	1 $20.033 10 $18.332 25 $17.722 100 $15.322 250 $14.154

NXP USA Inc. MW6S010NR1

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