NXP USA Inc. MW6S010GNR1

Name: MW6S010GNR1
Brand: NXP USA Inc.
SKU: 2475129-MW6S010GNR1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MW6S010GNR1

Manufacturer:: NXP USA Inc.

Ventron No:: 2475129-MW6S010GNR1

Description:: FET RF 68V 960MHZ TO270-2GW

ECAD Model:

Datasheet:: MW6S010GNR1

Specifications

NXP USA Inc. MW6S010GNR1 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MW6S010GNR1.

Factory Lead Time
10 Weeks
Package / Case
TO-270BA
Surface Mount
YES
Transistor Element Material
SILICON
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Voltage - Rated
68V
HTS Code
8541.29.00.75
Subcategory
FET General Purpose Power
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
Frequency
960MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
MW6S010
JESD-30 Code
R-PDSO-G2
Qualification Status
Not Qualified
Operating Temperature (Max)
225°C
Number of Elements
1
Configuration
SINGLE
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Current - Test
125mA
Transistor Application
AMPLIFIER
Polarity/Channel Type
N-CHANNEL
Transistor Type
LDMOS
Gain
18dB
DS Breakdown Voltage-Min
68V
Power - Output
10W
FET Technology
METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs)
61.4W
Voltage - Test
28V
RoHS Status
ROHS3 Compliant

Description

MW6S010GNR1 Description
Intended for Class A or Class AB base station operations at up to 1500 MHz in frequency. Suitable for applications requiring multicarrier amplifiers and analog and digital modulation. This technology attempts to increase avalanche energy, increase dv/dt rate, decrease conduction loss, and improve switching performance.

MW6S010GNR1 Features
? series equivalent large-signal impedance parameters
? RF Feedback for Broadband Stability on-chip
? Up to a Maximum of 32 VDD Operation Qualified
? Protection from Integrated ESD
? Plastic Package with 225°C Capability
? RoHS conformant
? on reel-to-reel tape. 500 Units per 24 mm, 13 inch Reel, R1 Suffix.

MW6S010GNR1 Applications
Switching applications

MW6S010GNR1 More Descriptions

RF Power Transistor,450 to 1500 MHz, 10 W, Typ Gain in dB is 18 @ 960 MHz, 28 V, LDMOS, SOT1731
Lateral N-Channel Broadband RF Power MOSFET, 450-1500 MHz, 10 W, 28 V, FM2NXP Semiconductors SCT
RF POWER MOSFET, LATERAL N-CH BROADBAND, 68V, TO-270-2 GULL; Transistor Type:RF FET; Drain Source Voltage Vds:68V; Power Dissipation Pd:10W; Operating Frequency Range:450MHz to 1500MHz; Operating Temperature Range:-10°C to 150°C ;RoHS Compliant: Yes

Certification