NXP USA Inc. MRF7S19080HSR3

Name: MRF7S19080HSR3
Brand: NXP USA Inc.
SKU: 3069890-MRF7S19080HSR3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MRF7S19080HSR3

Manufacturer:: NXP USA Inc.

Ventron No:: 3069890-MRF7S19080HSR3

Description:: FET RF 65V 1.99GHZ NI-780S

ECAD Model:

Datasheet:: MRF7S19080HSR3

Specifications

NXP USA Inc. MRF7S19080HSR3 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MRF7S19080HSR3.

Package / Case
NI-780S
Packaging
Tape & Reel (TR)
Published
2011
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Voltage - Rated
65V
HTS Code
8541.29.00.75
Frequency
1.99GHz
Base Part Number
MRF7S19080
Current - Test
750mA
Transistor Type
LDMOS
Gain
18dB
Power - Output
24W
Voltage - Test
28V
RoHS Status
ROHS3 Compliant

Description

MRF7S19080HSR3 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet MRF7S19080HSR3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MRF7S19080HSR3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

MRF7S19080HSR3 More Descriptions

Single W-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 24 W Avg., 28 V
Trans RF MOSFET N-CH 65V 3-Pin NI-780S T/R
RF POWER TRANSISTOR LDMOS
OEMs, CMs ONLY (NO BROKERS)
FET RF 65V 1.99GHZ NI-780S
Contact for details

Product Comparison

The three parts on the right have similar specifications to MRF7S19080HSR3.

Image

Part Number

Manufacturer

Package / Case

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Voltage - Rated

HTS Code

Frequency

Base Part Number

Current - Test

Transistor Type

Gain

Power - Output

Voltage - Test

RoHS Status

Factory Lead Time

Surface Mount

Transistor Element Material

Number of Terminations

Subcategory

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Operating Temperature (Max)

Number of Elements

Configuration

Operating Mode

Case Connection

Polarity/Channel Type

FET Technology

View Compare
MRF7S19080HSR3

NXP USA Inc.

NI-780S

Tape & Reel (TR)

2011

Obsolete

1 (Unlimited)

EAR99

65V

8541.29.00.75

1.99GHz

MRF7S19080

750mA

LDMOS

18dB

24W

28V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
MRF7S19170HR3

NXP USA Inc.

NI-880

Tape & Reel (TR)

2009

Obsolete

1 (Unlimited)

EAR99

65V

8541.29.00.75

1.99GHz

MRF7S19170

1.4A

LDMOS

17.2dB

50W

28V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

MRF7S19080HSR3 vs MRF7S19170HR3
MRF7S16150HR3

NXP USA Inc.

SOT-957A

Tape & Reel (TR)

2009

Obsolete

1 (Unlimited)

-

65V

-

1.6GHz~1.66GHz

MRF7S16150

1.5A

LDMOS

19.7dB

32W

28V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

MRF7S19080HSR3 vs MRF7S16150HR3
MRF7S19170HSR3

NXP USA Inc.

NI-880S

Tape & Reel (TR)

2011

Obsolete

1 (Unlimited)

EAR99

65V

8541.29.00.75

1.99GHz

MRF7S19170

1.4A

LDMOS

17.2dB

50W

28V

ROHS3 Compliant

10 Weeks

YES

SILICON

2

FET General Purpose Power

DUAL

FLAT

260

40

R-CDFM-F2

Not Qualified

225°C

1

SINGLE

ENHANCEMENT MODE

SOURCE

N-CHANNEL

METAL-OXIDE SEMICONDUCTOR

MRF7S19080HSR3 vs MRF7S19170HSR3