ON Semiconductor MPSA92RL1G
- Part Number:
- MPSA92RL1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2469465-MPSA92RL1G
- Description:
- TRANS PNP 300V 0.5A TO-92
- Datasheet:
- MPSA92RL1G
ON Semiconductor MPSA92RL1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MPSA92RL1G.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)
- Contact PlatingCopper, Silver, Tin
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Surface MountNO
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published1998
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- SubcategoryOther Transistors
- Voltage - Rated DC-300V
- Max Power Dissipation625mW
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Current Rating-500mA
- Frequency50MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMPSA92
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation625mW
- Gain Bandwidth Product50MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)300V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 30mA 10V
- Current - Collector Cutoff (Max)250nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 2mA, 20mA
- Collector Emitter Breakdown Voltage300V
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage-500mV
- Max Breakdown Voltage300V
- Collector Base Voltage (VCBO)300V
- Emitter Base Voltage (VEBO)5V
- hFE Min25
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
MPSA92RL1G Overview
In this device, the DC current gain is 25 @ 30mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 2mA, 20mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-500mA).50MHz is present in the transition frequency.An input voltage of 300V volts is the breakdown voltage.Maximum collector currents can be below 500mA volts.
MPSA92RL1G Features
the DC current gain for this device is 25 @ 30mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 50MHz
MPSA92RL1G Applications
There are a lot of ON Semiconductor
MPSA92RL1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 25 @ 30mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 2mA, 20mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-500mA).50MHz is present in the transition frequency.An input voltage of 300V volts is the breakdown voltage.Maximum collector currents can be below 500mA volts.
MPSA92RL1G Features
the DC current gain for this device is 25 @ 30mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 50MHz
MPSA92RL1G Applications
There are a lot of ON Semiconductor
MPSA92RL1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MPSA92RL1G More Descriptions
Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Trans GP BJT PNP 300V 0.5A 3-Pin TO-92 T/R
BIPOLAR TRANSISTOR, PNP, -300V; Transistor Polarity:PNP; Collector Emitter Voltage, V(br)ceo:300V; Transition Frequency Typ, ft:50MHz; Power Dissipation, Pd:625mW; Operating Temperature Range:-55°C to 150°C ;RoHS Compliant: Yes
Trans GP BJT PNP 300V 0.5A 3-Pin TO-92 T/R
BIPOLAR TRANSISTOR, PNP, -300V; Transistor Polarity:PNP; Collector Emitter Voltage, V(br)ceo:300V; Transition Frequency Typ, ft:50MHz; Power Dissipation, Pd:625mW; Operating Temperature Range:-55°C to 150°C ;RoHS Compliant: Yes
The three parts on the right have similar specifications to MPSA92RL1G.
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ImagePart NumberManufacturerLifecycle StatusContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRadiation HardeningRoHS StatusLead FreeVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Supplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionView Compare
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MPSA92RL1GLAST SHIPMENTS (Last Updated: 4 days ago)Copper, Silver, TinThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)NO3SILICON-55°C~150°C TJTape & Reel (TR)1998e1yesObsolete1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)Other Transistors-300V625mWBOTTOM260-500mA50MHz40MPSA9231Single625mW50MHzPNPPNP300V500mA25 @ 30mA 10V250nA ICBO500mV @ 2mA, 20mA300V50MHz-500mV300V300V5V25NoRoHS CompliantLead Free--------------------
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------------------------------------------------20V1V @ 10µA, 10mANPN - DarlingtonTO-92-3-625mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole-20000 @ 10mA, 5V100nA1.2A-----
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--Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)----55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)-----------MPSA12------NPN - Darlington--20000 @ 10mA 5V100nA1V @ 10μA, 10mA------------------------TO-92-3625mW20V1.2A-
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--Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)----55°C~150°C TJTape & Box (TB)---Obsolete1 (Unlimited)-----------MPSA05------NPN--100 @ 100mA 1V100nA250mV @ 10mA, 100mA------------------------TO-92-3625mW60V500mA100MHz
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