Fairchild/ON Semiconductor MPSA14
- Part Number:
- MPSA14
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3069861-MPSA14
- Description:
- TRANS NPN DARL 30V 1.2A TO-92
- Datasheet:
- MPSA13, 14
Fairchild/ON Semiconductor MPSA14 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor MPSA14.
- Voltage - Collector Emitter Breakdown (Max):30V
- Vce Saturation (Max) @ Ib, Ic:1.5V @ 100µA, 100mA
- Transistor Type:NPN - Darlington
- Supplier Device Package:TO-92-3
- Series:-
- Power - Max:625mW
- Packaging:Bulk
- Package / Case:TO-226-3, TO-92-3 (TO-226AA)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Frequency - Transition:125MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce:20000 @ 100mA, 5V
- Current - Collector Cutoff (Max):100nA (ICBO)
- Current - Collector (Ic) (Max):1.2A
part#MPSA14, Manufacturer:Fairchild/ON Semiconductor is available at ventronchip.com, see description of MPSA14 as below .use the request quote form to request MPSA14 price and lead time.Every pieces of Electronic Components you buy from ventronchip.com is warranty and quality guaranted.we are an independent distributor of electronic components with extensive inventory in stock.The price and lead time for MPSA14 depending on the quantity required, availability and warehouse location.
MPSA14 More Descriptions
Transistor-NPN Silicon Darlington 30V 500ma TO-92 Case For Applications Requiring High GainNTE Electronics
TRANS NPN DARL 30V 0.5A TO92
On Semiconductor Darlington Transistor, V(Br)Ceo Min: 30 V, Vce(Sat) Max: 1.5 V, Hfe Min: 20, Ic Max: 500 Ma, Type: Npn, Package: To-226Aa, (To-92)
T-NPN- SI- DARL- PREAMP
TRANS NPN DARL 30V 0.5A TO92
On Semiconductor Darlington Transistor, V(Br)Ceo Min: 30 V, Vce(Sat) Max: 1.5 V, Hfe Min: 20, Ic Max: 500 Ma, Type: Npn, Package: To-226Aa, (To-92)
T-NPN- SI- DARL- PREAMP
The three parts on the right have similar specifications to MPSA14.
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ImagePart NumberManufacturerVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Factory Lead TimeMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionRoHS StatusSupplier Device PackageBase Part NumberView Compare
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MPSA1430V1.5V @ 100µA, 100mANPN - DarlingtonTO-92-3-625mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole125MHz20000 @ 100mA, 5V100nA (ICBO)1.2A-------------------------------------
-
--------------8 WeeksThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)NOSILICON-55°C~150°C TJCut Tape (CT)2006e3yesLast Time Buy1 (Unlimited)3EAR99Matte Tin (Sn)BOTTOMNOT SPECIFIEDNOT SPECIFIED3O-PBCY-T3Not Qualified1SINGLE625mWNPNNPN80 @ 10mA 10V250nA ICBO500mV @ 2mA, 20mA300V300mA50MHz50MHzROHS3 Compliant--
-
20V1V @ 10µA, 10mANPN - DarlingtonTO-92-3-625mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole-20000 @ 10mA, 5V100nA1.2A------------------------------------
-
---------------Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)-----------625mW-NPN500 @ 10mA 5V50nA ICBO300mV @ 5mA, 50mA45V100mA-100MHz-TO-92-3MPSA18
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