NXP USA Inc. MPSA42,116
- Part Number:
- MPSA42,116
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2468480-MPSA42,116
- Description:
- TRANS NPN 300V 0.1A SOT54
- ECAD Model:
-
- Datasheet:
- MPSA4(2,3)
NXP USA Inc. MPSA42,116 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MPSA42,116.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2009
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- HTS Code8541.21.00.95
- SubcategoryOther Transistors
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberMPSA42
- Pin Count3
- JESD-30 CodeO-PBCY-T3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Power - Max500mW
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 30mA 10V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 2mA, 20mA
- Voltage - Collector Emitter Breakdown (Max)300V
- Current - Collector (Ic) (Max)100mA
- Transition Frequency50MHz
- Frequency - Transition50MHz
- Power Dissipation-Max (Abs)0.625W
- VCEsat-Max0.5 V
- Collector-Base Capacitance-Max3pF
- RoHS StatusROHS3 Compliant
MPSA42,116 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 30mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 2mA, 20mA.Parts of this part have transition frequencies of 50MHz.This device displays a 300V maximum voltage - Collector Emitter Breakdown.
MPSA42,116 Features
the DC current gain for this device is 40 @ 30mA 10V
the vce saturation(Max) is 500mV @ 2mA, 20mA
a transition frequency of 50MHz
MPSA42,116 Applications
There are a lot of NXP USA Inc.
MPSA42,116 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 30mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 2mA, 20mA.Parts of this part have transition frequencies of 50MHz.This device displays a 300V maximum voltage - Collector Emitter Breakdown.
MPSA42,116 Features
the DC current gain for this device is 40 @ 30mA 10V
the vce saturation(Max) is 500mV @ 2mA, 20mA
a transition frequency of 50MHz
MPSA42,116 Applications
There are a lot of NXP USA Inc.
MPSA42,116 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MPSA42,116 More Descriptions
NPN HIGH-VOLTAGE TRANSISTOR
TRANS NPN 300V 0.1A SOT54
IC REG LINEAR 2V 150MA SC82AB
TRANS NPN 300V 0.1A SOT54
IC REG LINEAR 2V 150MA SC82AB
The three parts on the right have similar specifications to MPSA42,116.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionPower Dissipation-Max (Abs)VCEsat-MaxCollector-Base Capacitance-MaxRoHS StatusVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Supplier Device PackageView Compare
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MPSA42,116Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)NOSILICON150°C TJTape & Reel (TR)2009e3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn)8541.21.00.95Other TransistorsBOTTOMNOT SPECIFIEDunknownNOT SPECIFIEDMPSA423O-PBCY-T3Not Qualified1SINGLE500mWAMPLIFIERNPNNPN40 @ 30mA 10V100nA ICBO500mV @ 2mA, 20mA300V100mA50MHz50MHz0.625W0.5 V3pFROHS3 Compliant---------------- -
----------------------------------------30V1.5V @ 100µA, 100mANPN - DarlingtonTO-92-3-625mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole125MHz20000 @ 100mA, 5V100nA (ICBO)1.2A-
-
----------------------------------------20V1V @ 10µA, 10mANPN - DarlingtonTO-92-3-625mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole-20000 @ 10mA, 5V100nA1.2A-
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---55°C~150°C TJTape & Reel (TR)--Obsolete1 (Unlimited)---------MPSA12-----625mW--NPN - Darlington20000 @ 10mA 5V100nA1V @ 10μA, 10mA20V1.2A--------------------TO-92-3
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