Fairchild/ON Semiconductor MPS6534
- Part Number:
- MPS6534
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2846917-MPS6534
- Description:
- TRANS PNP 40V 0.8A TO-92
- Datasheet:
- MPS6534
Fairchild/ON Semiconductor MPS6534 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor MPS6534.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishMATTE TIN
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT APPLICABLE
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT APPLICABLE
- JESD-30 CodeO-PBCY-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Power - Max625mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce90 @ 100mA 1V
- Current - Collector Cutoff (Max)50nA ICBO
- Vce Saturation (Max) @ Ib, Ic300mV @ 10mA, 100mA
- Voltage - Collector Emitter Breakdown (Max)40V
- Current - Collector (Ic) (Max)800mA
- RoHS StatusROHS3 Compliant
MPS6534 Overview
This device has a DC current gain of 90 @ 100mA 1V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 300mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).Collector Emitter Breakdown occurs at 40VV - Maximum voltage.
MPS6534 Features
the DC current gain for this device is 90 @ 100mA 1V
the vce saturation(Max) is 300mV @ 10mA, 100mA
MPS6534 Applications
There are a lot of Rochester Electronics, LLC
MPS6534 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 90 @ 100mA 1V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 300mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).Collector Emitter Breakdown occurs at 40VV - Maximum voltage.
MPS6534 Features
the DC current gain for this device is 90 @ 100mA 1V
the vce saturation(Max) is 300mV @ 10mA, 100mA
MPS6534 Applications
There are a lot of Rochester Electronics, LLC
MPS6534 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MPS6534 More Descriptions
Bulk Through Hole PNP Single Bipolar (BJT) Transistor 90 @ 100mA 1V 800mA 625mW 40V
Small Signal Bipolar Transistor, 0.8A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
MPS6534 Series 40 V 800 mA Through Hole PNP General Purpose Amplifier - TO-92-3
Trans GP BJT PNP 40V 0.8A 3-Pin TO-92 Bulk
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics.
Small Signal Bipolar Transistor, 0.8A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
MPS6534 Series 40 V 800 mA Through Hole PNP General Purpose Amplifier - TO-92-3
Trans GP BJT PNP 40V 0.8A 3-Pin TO-92 Bulk
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics.
The three parts on the right have similar specifications to MPS6534.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)RoHS StatusVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Pin CountTransition FrequencyFrequency - TransitionSupplier Device PackageBase Part NumberView Compare
-
MPS6534Through HoleTO-226-3, TO-92-3 (TO-226AA)NOSILICON-55°C~150°C TJBulke3yesObsolete1 (Unlimited)3MATTE TINBOTTOMNOT APPLICABLEunknownNOT APPLICABLEO-PBCY-T3COMMERCIAL1SINGLE625mWSWITCHINGPNPPNP90 @ 100mA 1V50nA ICBO300mV @ 10mA, 100mA40V800mAROHS3 Compliant--------------------
-
------------------------------25V500mV @ 5mA, 50mANPNTO-92-3-625mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole-300 @ 2mA, 10V50nA (ICBO)100mA-----
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)NOSILICON-55°C~150°C TJTape & Reel (TR)e0yesObsolete1 (Unlimited)3TIN LEADBOTTOM240-30O-PBCY-T3COMMERCIAL1SINGLE625mWAMPLIFIERNPNNPN75 @ 1A 2V100nA ICBO500mV @ 200mA, 2A60V2ANon-RoHS Compliant--------------375MHz75MHz--
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---55°C~150°C TJTape & Reel (TR)--Obsolete1 (Unlimited)----------625mW--NPN150 @ 2mA 10V50nA ICBO500mV @ 5mA, 50mA25V200mA------------------TO-92-3MPS6514
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