Fairchild/ON Semiconductor MPS6513
- Part Number:
- MPS6513
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3069272-MPS6513
- Description:
- TRANS NPN 30V 0.2A TO-92
- ECAD Model:
-
- Datasheet:
- MPS6513
Fairchild/ON Semiconductor MPS6513 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor MPS6513.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal PositionBOTTOM
- Reach Compliance Codeunknown
- Pin Count3
- JESD-30 CodeO-PBCY-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Power - Max625mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce90 @ 2mA 10V
- Current - Collector Cutoff (Max)50nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 5mA, 50mA
- Voltage - Collector Emitter Breakdown (Max)30V
- Current - Collector (Ic) (Max)200mA
- RoHS StatusROHS3 Compliant
MPS6513 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 90 @ 2mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 5mA, 50mA.A 30V maximal voltage - Collector Emitter Breakdown is present in the device.
MPS6513 Features
the DC current gain for this device is 90 @ 2mA 10V
the vce saturation(Max) is 500mV @ 5mA, 50mA
MPS6513 Applications
There are a lot of Rochester Electronics, LLC
MPS6513 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 90 @ 2mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 5mA, 50mA.A 30V maximal voltage - Collector Emitter Breakdown is present in the device.
MPS6513 Features
the DC current gain for this device is 90 @ 2mA 10V
the vce saturation(Max) is 500mV @ 5mA, 50mA
MPS6513 Applications
There are a lot of Rochester Electronics, LLC
MPS6513 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MPS6513 More Descriptions
NPN General Purpose Amplifier 30V 200mA TO-92
Small Signal Bipolar Transistor
BULK / NPN GENERAL PURPOSE XTOR
Small Signal Bipolar Transistor
BULK / NPN GENERAL PURPOSE XTOR
The three parts on the right have similar specifications to MPS6513.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal PositionReach Compliance CodePin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)RoHS StatusVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):JESD-609 CodePbfree CodeTerminal FinishPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Transition FrequencyFrequency - TransitionSupplier Device PackageBase Part NumberView Compare
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MPS6513Through HoleTO-226-3, TO-92-3 (TO-226AA)NOSILICON-55°C~150°C TJBulkObsolete1 (Unlimited)3BOTTOMunknown3O-PBCY-T3COMMERCIAL1SINGLE625mWSWITCHINGNPNNPN90 @ 2mA 10V50nA ICBO500mV @ 5mA, 50mA30V200mAROHS3 Compliant------------------------ -
--------------------------25V500mV @ 5mA, 50mANPNTO-92-3-625mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole-300 @ 2mA, 10V50nA (ICBO)100mA---------
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)NOSILICON-55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)3BOTTOM-3O-PBCY-T3COMMERCIAL1SINGLE625mWAMPLIFIERNPNNPN75 @ 1A 2V100nA ICBO500mV @ 200mA, 2A60V2ANon-RoHS Compliant--------------e0yesTIN LEAD2403075MHz75MHz--
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)--------625mW--NPN150 @ 2mA 10V50nA ICBO500mV @ 5mA, 50mA25V200mA----------------------TO-92-3MPS6514
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