MJL3281AG

ON Semiconductor MJL3281AG

Part Number:
MJL3281AG
Manufacturer:
ON Semiconductor
Ventron No:
2845216-MJL3281AG
Description:
TRANS NPN 260V 15A TO264
ECAD Model:
Datasheet:
MJL3281AG

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Specifications
ON Semiconductor MJL3281AG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJL3281AG.
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
    10 Weeks
  • Mounting Type
    Through Hole
  • Package / Case
    TO-264-3, TO-264AA
  • Surface Mount
    NO
  • Number of Pins
    3
  • Weight
    4.535924g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~150°C TJ
  • Packaging
    Tube
  • Published
    2000
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    200V
  • Max Power Dissipation
    200W
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    15A
  • Frequency
    30MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    200W
  • Case Connection
    ISOLATED
  • Transistor Application
    AMPLIFIER
  • Gain Bandwidth Product
    30MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    200V
  • Max Collector Current
    15A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    75 @ 5A 5V
  • Current - Collector Cutoff (Max)
    50μA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    3V @ 1A, 10A
  • Collector Emitter Breakdown Voltage
    260V
  • Transition Frequency
    30MHz
  • Collector Emitter Saturation Voltage
    3V
  • Collector Base Voltage (VCBO)
    230V
  • Emitter Base Voltage (VEBO)
    7V
  • hFE Min
    60
  • Height
    26.4mm
  • Length
    20.3mm
  • Width
    5.3mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MJL3281AG Overview
In this device, the DC current gain is 75 @ 5A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 3V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 1A, 10A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (15A).30MHz is present in the transition frequency.Maximum collector currents can be below 15A volts.

MJL3281AG Features
the DC current gain for this device is 75 @ 5A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 1A, 10A
the emitter base voltage is kept at 7V
the current rating of this device is 15A
a transition frequency of 30MHz


MJL3281AG Applications
There are a lot of ON Semiconductor
MJL3281AG applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MJL3281AG More Descriptions
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MJL Series 250 V 15 A Flange Mount NPN Silicon Power Transistor - TO-264
TRANSISTOR, TO-264 TUBE 25; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 260V; Transition Frequency ft: 30MHz; Power Dissipation Pd: 200W; DC Collector Current: 15A; DC Current Gain hFE: 175hFE; Transistor Cas
The MJL3281A and MJL1302A are PowerBase power transistors for high power audio disk head positioners and other linear applications.
Bipolar Transistor, Npn, 260V; Transistor Polarity:Npn; Collector Emitter Voltage Max:260V; Continuous Collector Current:15A; Power Dissipation:200W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:30Mhz Rohs Compliant: Yes |Onsemi MJL3281AG
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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