ON Semiconductor MJL3281AG
- Part Number:
- MJL3281AG
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2845216-MJL3281AG
- Description:
- TRANS NPN 260V 15A TO264
- Datasheet:
- MJL3281AG
ON Semiconductor MJL3281AG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJL3281AG.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time10 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-264-3, TO-264AA
- Surface MountNO
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published2000
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC200V
- Max Power Dissipation200W
- Peak Reflow Temperature (Cel)260
- Current Rating15A
- Frequency30MHz
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation200W
- Case ConnectionISOLATED
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product30MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)200V
- Max Collector Current15A
- DC Current Gain (hFE) (Min) @ Ic, Vce75 @ 5A 5V
- Current - Collector Cutoff (Max)50μA ICBO
- Vce Saturation (Max) @ Ib, Ic3V @ 1A, 10A
- Collector Emitter Breakdown Voltage260V
- Transition Frequency30MHz
- Collector Emitter Saturation Voltage3V
- Collector Base Voltage (VCBO)230V
- Emitter Base Voltage (VEBO)7V
- hFE Min60
- Height26.4mm
- Length20.3mm
- Width5.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MJL3281AG Overview
In this device, the DC current gain is 75 @ 5A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 3V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 1A, 10A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (15A).30MHz is present in the transition frequency.Maximum collector currents can be below 15A volts.
MJL3281AG Features
the DC current gain for this device is 75 @ 5A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 1A, 10A
the emitter base voltage is kept at 7V
the current rating of this device is 15A
a transition frequency of 30MHz
MJL3281AG Applications
There are a lot of ON Semiconductor
MJL3281AG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 75 @ 5A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 3V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 1A, 10A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (15A).30MHz is present in the transition frequency.Maximum collector currents can be below 15A volts.
MJL3281AG Features
the DC current gain for this device is 75 @ 5A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 1A, 10A
the emitter base voltage is kept at 7V
the current rating of this device is 15A
a transition frequency of 30MHz
MJL3281AG Applications
There are a lot of ON Semiconductor
MJL3281AG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJL3281AG More Descriptions
Bipolar Power Transistor, NPN, 15 A, 260 V, 200 Watt
ON Semi MJL3281AG NPN Bipolar Transistor 15 A 200 V 3-Pin TO-3BPL
Power Bipolar Transistor, 15A I(C), 260V V(BR)CEO, 1-Element, NPN, Silicon, TO-264AA, Plastic/Epoxy, 3 Pin
Trans GP BJT NPN 200V 15A 3-Pin(3 Tab) TO-3BPL Rail - Rail/Tube
MJL Series 250 V 15 A Flange Mount NPN Silicon Power Transistor - TO-264
TRANSISTOR, TO-264 TUBE 25; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 260V; Transition Frequency ft: 30MHz; Power Dissipation Pd: 200W; DC Collector Current: 15A; DC Current Gain hFE: 175hFE; Transistor Cas
The MJL3281A and MJL1302A are PowerBase power transistors for high power audio disk head positioners and other linear applications.
Bipolar Transistor, Npn, 260V; Transistor Polarity:Npn; Collector Emitter Voltage Max:260V; Continuous Collector Current:15A; Power Dissipation:200W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:30Mhz Rohs Compliant: Yes |Onsemi MJL3281AG
ON Semi MJL3281AG NPN Bipolar Transistor 15 A 200 V 3-Pin TO-3BPL
Power Bipolar Transistor, 15A I(C), 260V V(BR)CEO, 1-Element, NPN, Silicon, TO-264AA, Plastic/Epoxy, 3 Pin
Trans GP BJT NPN 200V 15A 3-Pin(3 Tab) TO-3BPL Rail - Rail/Tube
MJL Series 250 V 15 A Flange Mount NPN Silicon Power Transistor - TO-264
TRANSISTOR, TO-264 TUBE 25; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 260V; Transition Frequency ft: 30MHz; Power Dissipation Pd: 200W; DC Collector Current: 15A; DC Current Gain hFE: 175hFE; Transistor Cas
The MJL3281A and MJL1302A are PowerBase power transistors for high power audio disk head positioners and other linear applications.
Bipolar Transistor, Npn, 260V; Transistor Polarity:Npn; Collector Emitter Voltage Max:260V; Continuous Collector Current:15A; Power Dissipation:200W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:30Mhz Rohs Compliant: Yes |Onsemi MJL3281AG
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